UNISONIC TECHNOLOGIES CO., LTD Preliminary MMBF170 Power MOSFET 0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC MMBF170 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), low input capacitance, low gate threshold voltage and high switching speed. FEATURES * RDS(ON)<5mΩ @ VGS=10V,ID=0.2A * High Switching Speed * Low Input Capacitance(typical 22pF) SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free MMBF170L-AE2-R MMBF170G-AE2-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel 1 of 2 QW-R502-629.a MMBF170 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Continuous ±20 V Gate-Source Voltage VGSS Pulsed ±40 V Drain-Gate Voltage RGS ≤1.0MΩ VDGR 60 V Continuous ID 500 mA Drain Current (Note 2) Pulsed IDM 800 mA Power Dissipation (Note 2) 225 mW PD Derating above TA=25°C (Note 2) 1.80 mW/°C Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Valid provided that terminals are kept at specified ambient temperature. THERMAL CHARACTERISTICS PARAMETER SYMBOL θJA Junction to Ambient RATINGS 556 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS (Note 1) Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse ON CHARACTERISTICS (Note 1) Gate Threshold Voltage SYMBOL Static Drain-Source On-State Resistance RDS(ON) BVDSS IDSS IGSS VGS(TH) Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-OFF Delay Time tD(OFF) Notes: 1. Pulse width ≤300µs, duty cycle ≤2%. TEST CONDITIONS MIN TYP MAX UNIT ID=100µA, VGS=0V VDS=60V, VGS=0V VDS=0V, VGS=+15V VDS=0V, VGS=-15V 60 VDS=VGS, ID=-250µA VGS=10V, ID=200mA VGS=4.5V, ID=50mA VDS=10V, ID=0.2A 0.8 VGS=0V, VDS=10V, f=1.0MHz VDD=25V, ID=0.5A, VGS=10V, RGEN=50Ω 70 V µA nA nA 1.0 +10 -10 2.1 3.0 5.0 5.3 80 V Ω mS 22 11 2.0 40 30 5.0 pF pF pF 10 10 ns ns UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 2 QW-R502-629.a