UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA N-CHANNEL POWER MOSFET DESCRIPTION 3 The UTC 2N7002LL uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 2 1 SOT-23-3 (JEDEC TO-236) FEATURES * RDS(ON) < 7.5Ω @ VGS=10V, ID=115mA * Low Reverse Transfer Capacitance ( CRSS = typical 5 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 3. Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Note: 2N7002LLG-AE2-R Pin Assignment: G: Gate D: Drain Package SOT-23-3 Pin Assignment 1 2 3 S G D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2014Unisonic Technologies Co., Ltd 1 of 3 QW-R502-284.e 2N7002LL Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Drain-Gate Voltage (RG=1.0MΩ) Continuous Gate-Source Voltage Non-repetitive (tP≦50μs) RATINGS UNIT 60 V 60 V ±20 V ±40 V Continuous(TC=25°C) 115 Drain Current mA ID Pulse(Note 2) 460 225 mW Power Dissipation (TA = 25°C) PD Derate above 25°C 1.8 mW /°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width≦300μs, Duty cycle≦2% THERMAL DATA PARAMETER SYMBOL θJA Junction to Ambient SYMBOL VDSS VDGR VGSS VGSM RATINGS 556 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS(Note) Gate Threshold Voltage SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=10µA VDS=60V, VGS=0V (TJ=25°C) VGS=±20V, VDS=0V 60 VGS(TH) VDS=VGS, ID=250 µA VGS=10V, ID=115mA VGS=5V, ID=50mA VGS=10V, ID=115mA(TC=25°C) VGS=5V, ID=50mA(TC=25°C) 1.0 Drain-Source On-State Voltage VDS(ON) Static Drain-Source On-Resistance RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VDD=25V, ID=115mA, VGEN=10V, RG=25Ω, RL=50Ω Turn-OFF Delay Time tD(OFF) SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=115mA, VGS=0V Maximum Body-Diode Continuous Current IS Source Current Pulsed ISM Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1.0 ±100 2.5 3.75 0.375 7.5 7.5 V µA nA V V Ω 50 25 5.0 pF pF pF 20 40 ns ns 1.5 115 115 V mA mA 2 of 3 QW-R502-284.e 2N7002LL Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-284.e