UNISONIC TECHNOLOGIES CO., LTD N5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY NPN TRANSISTOR 1 TO-220 FEATURES * High Voltage (VCEO = 800V) * High Speed Switching * Wide SOA 1 TO-220F *Pb-free plating product number: N5027L ORDERING INFORMATION Order Number Normal Lead Free Plating N5027-x-TA3-T N5027L-x-TA3-T N5027-x-TF3-T N5027L-x-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E Packing Tube Tube N5027L-x-TA3-T (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220, TF3: TO-220F (3)Rank (3) x: refer to Classificationof hFE1 (4)Lead Plating (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1of 4 QW-R203-032,A N5027 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Tc = 25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 850 V Collector-Emitter Voltage VCEO 800 V Collector-Emitter Voltage VEBO 7 V Peak Collector Current IC 3 A Collector Current (Pulse) ICP 10 A Base Current IB 1.5 A Peak Collector Consume Dissipation PC 50 W ℃ Peak Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time SYMBOL TEST CONDITIONS BVCBO IC=1mA, IE=0 BVCEO IC=5mA, IB=0 BVEBO IE=1mA, IC=0 IC=1.5A, IB1= -IB2=0.3A VCEX(SUS) L=2mH, Clamped ICBO VCB=800V, IE=0 IEBO VEB=5V, IC=0 hFE 1 VCE=5V, IC=0.2A hFE 2 VCE=5V, IC=1A VCE (SAT) IC=1A, IB=0.3A VBE (SAT) IC=1.5A, IB=0.3A Cob VCB=10V, f=1MHz, IE=0 fT VCE=10V, IC=0.2A tON VCC=400V IC=5IB1= -2.5IB2=2A tSTG RL=200Ω tF MIN 850 800 7 TYP MAX 800 UNIT V V V V 10 6 10 10 40 μA μA 1.1 1.5 V V pF MHz μs μs μs 60 15 0.5 3 0.3 CLASSIFICATION of hFE1 RANK RANGE N 10 ~ 20 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw R 15 ~ 30 O 20 ~ 40 2 of 4 QW-R203-032,A N5027 NPN SILICON TRANSISTOR ■ TYPICAL CHARACTERISTICS Static Characteristic Collector Current vs. Collector-Emitter Voltage DC Current Gain vs. Collector Current 4.0 1000 V CE=5V 3.2 DC Current Gain, hFE Collector Current, IC (A) 3.6 2.8 2.4 IB=150 mA IB=100 mA 2.0 1.6 1.2 IB =50mA 100 10 0.8 0.4 0.0 IB =10mA 0 1 2 3 4 5 6 7 8 9 1 0.01 10 100us Saturation Voltage vs. Collector Current 10 Collector Current vs. Base-Emitter Voltage 4.0 10 VCE=5V Ic=5IB 3.5 Collector Current, Ic (A) Saturation Voltage, VCE(SAT) (V) 1 Collector Current, IC (A) Collector-Emitter Voltage, VCE (V) 1 0.1 3.0 2.5 2.0 1.5 1.0 0.5 0.01 0.01 100us 1ms 0.1 1 0.0 0.0 10 0.4 0.6 0.8 1.0 1.2 Base-Emitter Voltage, VBE (V) Switching Time Time vs. Collector-Emitter Voltage Safe Operating Area Collector Current vs. Collector-Emitter Voltage 100 Vcc=400V 5.IB 1= - 2.5.I B2=Ic IcMAX.(Pulse) 0.1 0.01 1E-s 10 Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw s 0μ 10 1ms 1 1 C D 0.1 IcMAX.(Continuous ) s 1m 1 ms 10 Collector Current, Ic (A) 10 0.01 0.1 0.2 Collector Current, IC (A) 10 TIME, tON, tstg , tF (μs) 1ms 0.1 1 10 100 1000 10000 Collector-Emitter Voltage, VCE (V) 3 of 4 QW-R203-032,A N5027 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) Power Derating Power Dissipation vs. Case Temperature Reverse Operating Area Collector Current vs. Collector-Emitter Voltage 80 100 I B2=-0.3A Power Dissipation, Pc (W) Collector Current, Ic (A) 70 10 1 0.1 60 50 40 30 20 10 0.01 10 100us 100 1ms 1000 0 10000 Collector-Emitter Voltage, VCE (V) 0 25 50 75 100 125 150 175 Case Temperature, TC (℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-032,A