Datasheet

UNISONIC TECHNOLOGIES CO., LTD
N5027
NPN SILICON TRANSISTOR
HIGH VOLTAGE AND HIGH
RELIABILITY NPN
TRANSISTOR
1
TO-220
FEATURES
* High Voltage (VCEO = 800V)
* High Speed Switching
* Wide SOA
1
TO-220F
*Pb-free plating product number: N5027L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
N5027-x-TA3-T
N5027L-x-TA3-T
N5027-x-TF3-T
N5027L-x-TF3-T
Package
TO-220
TO-220F
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tube
N5027L-x-TA3-T
(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TA3: TO-220, TF3: TO-220F
(3)Rank
(3) x: refer to Classificationof hFE1
(4)Lead Plating
(4) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R203-032,A
N5027
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Tc = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
850
V
Collector-Emitter Voltage
VCEO
800
V
Collector-Emitter Voltage
VEBO
7
V
Peak Collector Current
IC
3
A
Collector Current (Pulse)
ICP
10
A
Base Current
IB
1.5
A
Peak Collector Consume Dissipation
PC
50
W
℃
Peak Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
SYMBOL
TEST CONDITIONS
BVCBO IC=1mA, IE=0
BVCEO IC=5mA, IB=0
BVEBO IE=1mA, IC=0
IC=1.5A, IB1= -IB2=0.3A
VCEX(SUS)
L=2mH, Clamped
ICBO
VCB=800V, IE=0
IEBO
VEB=5V, IC=0
hFE 1
VCE=5V, IC=0.2A
hFE 2
VCE=5V, IC=1A
VCE (SAT) IC=1A, IB=0.3A
VBE (SAT) IC=1.5A, IB=0.3A
Cob
VCB=10V, f=1MHz, IE=0
fT
VCE=10V, IC=0.2A
tON
VCC=400V
IC=5IB1= -2.5IB2=2A
tSTG
RL=200Ω
tF
MIN
850
800
7
TYP
MAX
800
UNIT
V
V
V
V
10
6
10
10
40
μA
μA
1.1
1.5
V
V
pF
MHz
μs
μs
μs
60
15
0.5
3
0.3
CLASSIFICATION of hFE1
RANK
RANGE
N
10 ~ 20
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
R
15 ~ 30
O
20 ~ 40
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■ TYPICAL CHARACTERISTICS
Static Characteristic
Collector Current vs. Collector-Emitter Voltage
DC Current Gain vs. Collector Current
4.0
1000
V CE=5V
3.2
DC Current Gain, hFE
Collector Current, IC (A)
3.6
2.8
2.4
IB=150 mA
IB=100 mA
2.0
1.6
1.2
IB =50mA
100
10
0.8
0.4
0.0
IB =10mA
0
1
2
3
4
5
6
7
8
9
1
0.01
10
100us
Saturation Voltage vs. Collector Current
10
Collector Current vs. Base-Emitter Voltage
4.0
10
VCE=5V
Ic=5IB
3.5
Collector Current, Ic (A)
Saturation Voltage, VCE(SAT) (V)
1
Collector Current, IC (A)
Collector-Emitter Voltage, VCE (V)
1
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.01
0.01
100us
1ms
0.1
1
0.0
0.0
10
0.4
0.6
0.8
1.0
1.2
Base-Emitter Voltage, VBE (V)
Switching Time
Time vs. Collector-Emitter Voltage
Safe Operating Area
Collector Current vs. Collector-Emitter Voltage
100
Vcc=400V
5.IB 1= - 2.5.I B2=Ic
IcMAX.(Pulse)
0.1
0.01
1E-s
10
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
s
0μ
10
1ms
1
1
C
D
0.1
IcMAX.(Continuous )
s
1m
1
ms
10
Collector Current, Ic (A)
10
0.01
0.1
0.2
Collector Current, IC (A)
10
TIME, tON, tstg , tF (μs)
1ms
0.1
1
10
100
1000
10000
Collector-Emitter Voltage, VCE (V)
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Power Derating
Power Dissipation vs. Case Temperature
Reverse Operating Area
Collector Current vs. Collector-Emitter Voltage
80
100
I B2=-0.3A
Power Dissipation, Pc (W)
Collector Current, Ic (A)
70
10
1
0.1
60
50
40
30
20
10
0.01
10
100us
100
1ms
1000
0
10000
Collector-Emitter Voltage, VCE (V)
0
25
50
75
100
125
150 175
Case Temperature, TC (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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