Datasheet

UNISONIC TECHNOLOGIES CO., LTD
TUL1203
NPN SILICON TRANSISTOR
HIGH VOLTAGE
FAST-SWITCHING NPN POWER
TRANSISTOR

DESCRIPTION
The TUL1203 is manufactured by using high voltage Planar
technology for high voltage capability and high switching speeds.

FEATURES
* BVCES Up To 1400V.
* Better Distribution Of Dynamic Parameters And Lot To Lot Spread
* High Switching Speed

ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen-Free
TUL1203L-TA3-T
TUL1203G-TA3-T
TUL1203L-TA3-T
Package
TO-220
Pin Assignment
1
2
3
B
C
E
(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TA3: TO-220
(3)Lead Plating
(3) L: Lead Free, G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Packing
Tube
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QW-R203-038.E
TUL1203

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (IE = 0)
VCBO
1400
V
Collector-Emitter Voltage (VBE = 0)
VCES
1400
V
Collector-Emitter Voltage (IB = 0)
VCEO
550
V
Emitter-Base Voltage (IC = 0)
VEBO
12
V
Collector Current
IC
5
A
Collector Peak Current (tp <5 ms)
ICM
8
A
Base Current
IB
2
A
Base Peak Current (tp <5 ms)
IBM
4
A
Power Dissipation (TC = 25°С)
PD
100
W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-65 ~ +150
°С
Note: Absolute maximum ratings are the values beyond which the device will be damaged permanently.
Absolute maximum ratings are only stress ratings and it is not implied for functional device operation.

THERMAL DATA
PARAMETER
SYMBOL
θJC
Junction to Case

RATINGS
1.25
UNIT
°С /W
ELECTRICAL CHARACTERISTICS (Tc = 25°С unless otherwise specified)
PARAMETER
Collector Cut-off Current (VBE = 0)
Emitter Cut-off Current (IB = 0)
Collector-Emitter Sustaining Voltage (IB = 0)
(Note)
SYMBOL
TEST CONDITIONS
ICES
VCE = 1400 V
IEBO
VEB = 12 V
MIN
VCEO(SUS) IC = 100 mA
550
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)
Base-Emitter Saturation Voltage (Note)
VBE(SAT)
DC Current Gain (Note)
Resistive Load
hFE
Storage Time
tS
Fall Time
tF
Avalanche Energy
EAR
IC = 1 A, IB = 200 mA
IC = 2 A, IB = 400 mA
IC = 3 A, IB = 1 A
IC = 2 A, IB = 400 mA
IC = 3 A, IB = 1 A
IC = 1 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
IC = 0.8 mA, VCE = 3 V
IC = 2 A, VCE = 5 V
IC = 2 A, VCC = 150 V
IB1= 0.4 A, IB2= -0.8 A
TP= 30 µs
L = 2 mH, C = 1.8 nF
IBR ≤ 2.5A, 25°С < TC <125°С
TYP
MAX
100
100
V
0.5
0.7
1.5
1.5
1.5
10
10
14
9
6
UNIT
µA
µA
V
V
V
V
V
32
28
2.5
3.0
µs
0.2
0.3
µs
mJ
Note: Pulse Test: Pulse width = 300μs, Duty cycle≤1.5%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TUL1203

NPN SILICON TRANSISTOR
TEST CIRCUITS
VCC
C
L=2mH
IBR
T1
Rg
T.U.T
5V
VIN
TP
Energy Rating Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TUL1203
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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