UNISONIC TECHNOLOGIES CO., LTD UK3568 Power MOSFET SILICON N-CHANNEL MOS TYPE DESCRIPTION The UK3568 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 0.4Ω @ VGS=10V, ID=6A * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UK3568L-TF1-T UK3568G-TF1-T UK3568L-TF2-T UK3568G-TF2-T UK3568L-TF3-T UK3568G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-220F Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-263.F UK3568 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Drain-Gate Voltage (RG=20kΩ) VDGR 500 V Gate-Source Voltage VGSS ±30 V DC 12 Continuous Drain Current ID A (Note 2) Pulse(t=1ms) 48 Avalanche Current IAR 12 A Single Pulsed (Note 3) EAS 364 Avalanche Energy mJ Repetitive (Note 4) EAR 4 TO-220F/TO-220F1 40 Power Dissipation (TC=25°C) PD W TO-220F2 42 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Ensure that the temperature will not exceed 150°C. 3. VDD=90V, TCH= 25°C(initial), L=4.3mH, IAR=12A, RG=25Ω 4. Repetitive rating: pulse width limited by maximum channel temperature THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220F/TO-220F1 TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 3.125 2.98 UNIT °C /W °C /W 2 of 5 QW-R502-263.F UK3568 Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA Drain-Source Leakage Current IDSS VDS=500V, VGS=0V Gate-Source Leakage Current IGSS VDS=0V, VGS= ±25V ON CHARACTERISTICS Gate-Source Breakdown Voltage BVGSS IG=±10µA, VDS=0V Gate Threshold Voltage VGS(TH) VDS=10V , ID=250μA On State Drain Current ID(ON) Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=6A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=10V, VDD≈30V, RL=25Ω, ID=0.5A Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDD=50V, VGS=10V, ID=1.3 A Gate Source Charge QGS IG=100μA Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IDR =12 A, VGS=0V Continuous Drain Reverse Current ID Pulse Drain Reverse Current IDR Reverse Recovery Time trr IDR=12A, VGS=0V, dI/dt=100A/μs Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 500 100 ±10 ±30 2.0 4.0 0.4 0.52 V µA µA V V A Ω 1500 180 15 pF pF pF 70 155 490 230 60 10 19 ns ns ns ns nC nC nC 1.7 12 48 1200 16 V A A ns µC 3 of 5 QW-R502-263.F UK3568 TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage Switching Time Waveforms 350 300 VDS 250 90% 200 150 VGS 100 10% tD(ON) 50 tD(OFF) tTHL tTLH 0 0 0.2 0.8 0.4 0.6 1.0 Source to Drain Voltage,VSD (V) 1.2 Drain Current, ID (A) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-263.F UK3568 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-263.F