Datasheet

UNISONIC TECHNOLOGIES CO., LTD
20N15V
Preliminary
Power MOSFET
20A, 150V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 20N15V is an N-Channel POWER MOSFET, it uses
UTC’s advanced technology to provide customers with high
switching speed and low gate charge.
The UTC 20N15V is suitable for bridge circuits, power
converters and PWM motor controls.
„
FEATURES
* RDS(on)<0.13Ω @VGS=10V, ID=10A
* High switching speed
* Low gate charge
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
20N15VL-TF1-T
20N15VLG-TF1-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-220F1
1
G
Pin Assignment
2
3
D
S
Packing
Tube
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20N15V
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
150
V
Gate-Source Voltage
Continuous
VGSS
±20
V
20
A
Continuous
ID
Drain Current
Single Pulsed (tp≤10µs)
IDM
60
A
Starting TJ=25°C
Single Drain–to–Source
(VDD=120V, VGS=10V,
60
mJ
EAS
Avalanche Energy
IL=20A, L=0.3mH)
Power Dissipation
50
W
PD
Derate above 25°C
0.4
W/°C
Operating Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
62.5
2.5
UNIT
°C/W
°C/W
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VER.a
20N15V
„
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
ID=0.25mA, VGS=0V
MIN TYP MAX UNIT
150
V
VDS=150V, VGS=0V
10
µA
VDS=150V, VGS=0V, TJ=125°C
100
µA
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
100
100
nA
nA
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=0.25mA
2.5
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=10A
0.12 0.13
Ω
Drain–Source On–Voltage
VDS(ON)
VGS=10V, ID=20A
2.8
V
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 2)
IGSS
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
QG
VGS=10V, VDS=75V, ID=20A
QGS
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=75V, VGS=10V, ID=20A,
RG=9.1Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=20A, VGS=0V
(Note 1)
Maximum Continuous Drain-Source Diode
IS
Forward Current
Pulsed Drain-Source Current
ISM
Body Diode Reverse Recovery Time
tRR
IS=20A, VGS=0V, dIS/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.
2. Switching characteristics are independent of operating junction temperature.
Gate Charge
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
1.0
1133 1627
332 474
105 174
pF
pF
pF
39.1 55.9
7.5
22
11
25
77 153
33
67
49
97
nC
nC
nC
ns
ns
ns
ns
160
1.1
1.5
V
20
A
60
A
ns
µC
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20N15V
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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