UNISONIC TECHNOLOGIES CO., LTD 20N15V Preliminary Power MOSFET 20A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N15V is an N-Channel POWER MOSFET, it uses UTC’s advanced technology to provide customers with high switching speed and low gate charge. The UTC 20N15V is suitable for bridge circuits, power converters and PWM motor controls. FEATURES * RDS(on)<0.13Ω @VGS=10V, ID=10A * High switching speed * Low gate charge SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 20N15VL-TF1-T 20N15VLG-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220F1 1 G Pin Assignment 2 3 D S Packing Tube 1 of 4 QW-R502-915.a 20N15V Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 150 V Gate-Source Voltage Continuous VGSS ±20 V 20 A Continuous ID Drain Current Single Pulsed (tp≤10µs) IDM 60 A Starting TJ=25°C Single Drain–to–Source (VDD=120V, VGS=10V, 60 mJ EAS Avalanche Energy IL=20A, L=0.3mH) Power Dissipation 50 W PD Derate above 25°C 0.4 W/°C Operating Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 2.5 UNIT °C/W °C/W 2 of 4 VER.a 20N15V Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS ID=0.25mA, VGS=0V MIN TYP MAX UNIT 150 V VDS=150V, VGS=0V 10 µA VDS=150V, VGS=0V, TJ=125°C 100 µA VGS=+20V, VDS=0V VGS=-20V, VDS=0V 100 100 nA nA Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS (Note 1) Gate Threshold Voltage VGS(TH) VDS=VGS, ID=0.25mA 2.5 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=10A 0.12 0.13 Ω Drain–Source On–Voltage VDS(ON) VGS=10V, ID=20A 2.8 V DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS (Note 2) IGSS CISS COSS CRSS VGS=0V, VDS=25V, f=1.0MHz QG VGS=10V, VDS=75V, ID=20A QGS QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=75V, VGS=10V, ID=20A, RG=9.1Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=20A, VGS=0V (Note 1) Maximum Continuous Drain-Source Diode IS Forward Current Pulsed Drain-Source Current ISM Body Diode Reverse Recovery Time tRR IS=20A, VGS=0V, dIS/dt=100A/µs Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%. 2. Switching characteristics are independent of operating junction temperature. Gate Charge UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1.0 1133 1627 332 474 105 174 pF pF pF 39.1 55.9 7.5 22 11 25 77 153 33 67 49 97 nC nC nC ns ns ns ns 160 1.1 1.5 V 20 A 60 A ns µC 3 of 4 QW-R502-915.a 20N15V Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-915.a