UNISONIC TECHNOLOGIES CO., LTD ULB122 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC ULB122 is a medium power transistor designed for use in switching applications. FEATURES * High breakdown voltage * Low collector saturation voltage * Fast switching speed * Halogen Free ORDERING INFORMATION Ordering Number Package ULB122G-xx-TM3-T TO-251 1 B Pin Assignment 2 C www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 3 E Packing Tube 1 of 4 QW-R213-014,C ULB122 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage RATINGS UNIT 600 V 400 V 6 V DC 800 mA Collector Current IC Pulse 1600 mA DC 100 mA Base Current IB Pulse 200 mA Total Power Dissipation (TC=25°C) PD 20 W Junction Temperature TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE1 hFE2 DC Current Gain(Note) Collector-Emitter Saturation Voltage (Note) VCE(SAT) Base-Emitter Saturation Voltage (Note) SWITCHING CHARACTERISTICS VBE(SAT) TEST CONDITIONS IC=100µA IC=10mA IE=10µA VCB=600V MIN TYP UNIT 10 10 10 V V V µA µA µA 600 400 6 VCB=400V VEB=6V VCE=10V, IC=0.1A VCE=10V, IC=0.5A IC=100mA, IB=20mA IC=300mA, IB=60mA IC=100mA, IB=20mA 10 10 40 400 800 1 VCC=100V, IC=0.3A, IB1=-IB2=0.06A Note: Pulse Test : Pulse Width≤380µs, Duty Cycle≤2% Fall Time MAX 0.6 tF mV V µS CLASSIFICATION OF hFE1 RANK Range B1 10 ~ 17 B2 13 ~ 22 B3 18 ~ 27 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B4 23 ~ 32 B5 28 ~ 37 B6 33 ~ 40 2 of 4 QW-R213-014,C ULB122 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Current Gain vs. Collector Current 100 Saturation Voltage vs. Collector Current 10000 1000 10 100 10 1 hFE @VCE = 10V 1 10 100 1000 Collector Current, IC (mA) Capacitance vs. Reverse-Biased Voltage 100 1 VCE(SAT) @IC = 5IB 1 100 10 Collector Current, IC (mA) 1000 Safe Operating Area 10000 PT=1ms 1000 PT=100ms PT=1s 100 10 10 1 0.1 10 1 Reverse-Biased Voltage (V) 100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 1 100 10 1000 Forward Biased Voltage (V) 3 of 4 QW-R213-014,C ULB122 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R213-014,C