UTC HLB122 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB122 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage * Fast switching speed TO-251 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number:HLB122L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Total Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC ICF IB IBP PC TJ TSTG RATINGS 600 400 6 800 1600 100 200 20 150 -40 ~ +150 UNIT V V V mA mA mA mA W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current SYMBOL TEST CONDITIONS BVCBO IC = 100µA BVCEO IC = 10mA BVEBO IE = 10µA ICBO VCB = 600V ICEO VCB = 400V IEBO VEB = 6V *VCE (sat) 1 IC = 100mA, IB = 20mA C-E Saturation Voltage *VCE (sat) 2 IC = 300mA, IB = 60mA B-E Saturation Voltage *VBE (sat) IC = 100mA, IB = 20mA *hFE1 VCE = 10V, IC = 0.1A DC Current Gain VCE = 10V, IC = 0.5A *hFE2 Fall Time Tf VCC = 100V, IC= 0.3A, IB1= -IB2= 0.06A *Pulse Test : Pulse Width ≤ 380µs, Duty Cycle ≤ 2% UTC UNISONIC TECHNOLOGIES CO., LTD. www.unisonic.com.tw MIN 600 400 6 10 10 TYP MAX 10 10 10 400 800 1 40 0.6 UNIT V V V µA µA µA mV mV V µS 1 QW-R213-014,A UTC HLB122 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF HFE1 RANK Range B1 10 ~ 17 B2 13 ~ 22 B3 18 ~ 27 B4 23 ~ 32 B5 28 ~ 37 B6 33 ~ 40 CHARACTERISTICS CURVE Current Gain & Collector Current 75℃ 125℃ hFE 25℃ 10 hFE @ VCE = 10V 1 1 10 100 Saturation Voltage & Collector Current 10000 Saturation Voltage (mV) 100 1000 75℃ 125℃ 100 10 VCE(sat) @ IC = 5IB 1 1000 1 Collector Current, I C (mA) ON Voltage, VBE (on) (mV) Saturation Voltage (mV) 75℃ 25℃ 125℃ 100 VBE(on) @ VCE = 10V 10 100 1000 1 Collector Current, IC (mA) Capacitance & Reverse-Biased Voltage 1 10 Reverse-Biased Voltage (V) 1000 100 1000 P T=1ms PT =100 ms PT=1 s 100 10 1 1 10 100 1000 Forward Biased Voltage (V) UNISONIC TECHNOLOGIES CO., LTD. www.unisonic.com.tw 100 Safe Operating Area 10000 10 1 0.1 10 Collector Current(mA) Collector Current (mA) 100 Capacitance, Cob (pF) 1000 100 1 UTC 100 ON Voltage & Collector Current 1000 VBE(sat) @ IC = 5IB 1000 10 Collector Current, I C (mA) Saturation Voltage & Collector Current 10000 25℃ 2 QW-R213-014,A UTC HLB122 Switching Time (µs) 10 NPN EPITAXIAL SILICON TRANSISTOR Switching Time & Collector Current VCC = 45V, IC = 5IB1 = -5IB2 TSTG 1 Ton Tf 0.1 100 1000 Collector Current (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. www.unisonic.com.tw 3 QW-R213-014,A