UTC-IC HLB122

UTC HLB122
NPN EPITAXIAL SILICON TRANSISTOR
NPN TRIPLE DIFFUSED PLANAR TYPE
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC HLB122 is a medium power transistor
designed for use in switching applications.
FEATURES
1
* High breakdown voltage
* Low collector saturation voltage
* Fast switching speed
TO-251
1: BASE
2: COLLECTOR
3: EMITTER
*Pb-free plating product number:HLB122L
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Total Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
ICF
IB
IBP
PC
TJ
TSTG
RATINGS
600
400
6
800
1600
100
200
20
150
-40 ~ +150
UNIT
V
V
V
mA
mA
mA
mA
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
SYMBOL
TEST CONDITIONS
BVCBO
IC = 100µA
BVCEO
IC = 10mA
BVEBO
IE = 10µA
ICBO
VCB = 600V
ICEO
VCB = 400V
IEBO
VEB = 6V
*VCE (sat) 1 IC = 100mA, IB = 20mA
C-E Saturation Voltage
*VCE (sat) 2 IC = 300mA, IB = 60mA
B-E Saturation Voltage
*VBE (sat) IC = 100mA, IB = 20mA
*hFE1
VCE = 10V, IC = 0.1A
DC Current Gain
VCE = 10V, IC = 0.5A
*hFE2
Fall Time
Tf
VCC = 100V, IC= 0.3A, IB1= -IB2= 0.06A
*Pulse Test : Pulse Width ≤ 380µs, Duty Cycle ≤ 2%
UTC
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
MIN
600
400
6
10
10
TYP
MAX
10
10
10
400
800
1
40
0.6
UNIT
V
V
V
µA
µA
µA
mV
mV
V
µS
1
QW-R213-014,A
UTC HLB122
NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF HFE1
RANK
Range
B1
10 ~ 17
B2
13 ~ 22
B3
18 ~ 27
B4
23 ~ 32
B5
28 ~ 37
B6
33 ~ 40
CHARACTERISTICS CURVE
Current Gain & Collector Current
75℃
125℃
hFE
25℃
10
hFE @ VCE = 10V
1
1
10
100
Saturation Voltage & Collector Current
10000
Saturation Voltage (mV)
100
1000
75℃
125℃
100
10
VCE(sat) @ IC = 5IB
1
1000
1
Collector Current, I C (mA)
ON Voltage, VBE (on) (mV)
Saturation Voltage (mV)
75℃
25℃
125℃
100
VBE(on) @ VCE = 10V
10
100
1000
1
Collector Current, IC (mA)
Capacitance & Reverse-Biased Voltage
1
10
Reverse-Biased Voltage (V)
1000
100
1000
P T=1ms
PT =100 ms
PT=1 s
100
10
1
1
10
100
1000
Forward Biased Voltage (V)
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
100
Safe Operating Area
10000
10
1
0.1
10
Collector Current(mA)
Collector Current (mA)
100
Capacitance, Cob (pF)
1000
100
1
UTC
100
ON Voltage & Collector Current
1000
VBE(sat) @ IC = 5IB
1000
10
Collector Current, I C (mA)
Saturation Voltage & Collector Current
10000
25℃
2
QW-R213-014,A
UTC HLB122
Switching Time (µs)
10
NPN EPITAXIAL SILICON TRANSISTOR
Switching Time & Collector Current
VCC = 45V, IC = 5IB1 = -5IB2
TSTG
1
Ton
Tf
0.1
100
1000
Collector Current (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
3
QW-R213-014,A