UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB121 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage * Fast switching speed TO-251 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number:HLB121L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Total Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG RATINGS 600 400 6 300 600 40 100 10 150 -40 ~ +150 UNIT V V V mA mA mA mA W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current SYMBOL TEST CONDITIONS BVCBO IC = 100µA BVCEO IC = 10mA BVEBO IE = 10µA ICBO VCB = 550V ICEO VCB = 400V IEBO VEB = 6V *VCE (sat) 1 IC = 50mA, IB = 10mA C-E Saturation Voltage *VCE (sat) 2 IC = 100mA, IB = 20mA B-E Saturation Voltage *VBE (sat) IC = 50mA, IB = 10mA *hFE1 VCE = 10V, IC = 10mA DC Current Gain *hFE2 VCE = 10V, IC = 50mA *Pulse Test : Pulse Width ≤ 380µs, Duty Cycle ≤ 2% UTC MIN 600 400 6 MAX 10 10 10 400 750 1 8 10 UNISONIC TECHNOLOGIES CO., LTD. www.unisonic.com.tw TYP UNIT V V V µA µA µA mV mV V 36 1 QW-R213-015,A UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR CHARACTERISTICS CURVE DC Current Gain & Collector Current hFE @ VCE = 10V hFE Saturation Voltage & Collector Current 10000 0 Saturation Voltage (mV) 100 10 10000 100 0 VBE(sat) @ IC = 5IB 100 1 VCE(sat) @ IC = 5IB 10 1 10 100 1 1000 CapacitanceReverse Biased Voltage 1000 Collector Current (mA) On Voltage-Bton 1000 Collector Current (mA) On Voltage & Collector Current 10000 100 10 Collector Current (mA) 1000 Bton @ VCE = 10V 100 Cib 10 Cob 100 0 100 200 300 400 500 1 0.1 600 Collector Current (mA) Switching Time & Collector Current Ton TSTG 1 10 100 Safe Operating Area 10000 VCC = 100V, IC = 5IB1 = -5IB2 Tf 0.1 Collector Current (mA) Switching Time (? s) 10 1 Reverse Biased Voltage (V) 1000 100 PT=1ms PT=100ms PT=1s 10 0 100 200 300 400 Collector Current (mA) 500 600 0 50 100 150 200 250 Forward Biased Voltage (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. www.unisonic.com.tw 2 QW-R213-015,A