UNISONIC TECHNOLOGIES CO., LTD 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4466 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4466 is suitable for audio and general purpose, etc. FEATURES * High DC current gain * High collector-base breakdown voltage ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2SC4466L-x-T3P-T 2SC4466G-x-T3P-T TO-3P Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B C E Packing Tube MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 3 QW-R214-019.c 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 6 V Collector Current IC 6 A Base Current IB 3 A Collector Power Dissipation (TC=25°C) Pc 60 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA =25°C) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn-on time Switching time Storage time Fall time SYMBOL ICBO IEBO BVCEO hFE VCE(SAT) fT Cob tON tS tF TEST CONDITIONS VCB=120V VEB=6V IC=50mA VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IE=-0.5A VCB=10V, f=1MHz VCC=30V, RL=10Ω, IC=3A, IB1=0.3A IB2=0.3A MIN TYP MAX UNIT 10 µA 10 µA 80 V 50 180 1.5 V 20 MHz 110 pF 0.16 µS 2.60 µS 0.34 µS CLASSIFICATION OF hFE RANK RANGE O 50~100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw P 70~140 Y 90~180 2 of 3 QW-R214-019.c 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR TEST CIRCUIT UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R214-019.c