INCHANGE Semiconductor Product Specification 2SA1693 Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4466 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Current-Continuous -3 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range INCHANGE Semiconductor Product Specification 2SA1693 Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -1.5 V ICBO Collector Cutoff Current VCB= -80V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA hFE DC Current Gain IC= -2A ; VCE= -4V COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz 150 pF Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V 20 MHz 0.18 μs 1.1 μs 0.21 μs fT CONDITIONS MIN TYP. MAX -80 UNIT V B 50 180 Switching Times ton Turn-on Time tstg Storage Time tf IC= -3A ,RL= 10Ω, IB1= -IB2= -0.3A,VCC= -30V Fall Time hFE Classifications O P Y 50-100 70-140 90-180 2