ISC 2SA1693

INCHANGE Semiconductor
Product Specification
2SA1693
Silicon PNP Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown VoltageV(BR)CEO= -80V(Min)
·Good Linearity of hFE
·Complement to Type 2SC4466
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-6
A
IB
Base Current-Continuous
-3
A
PC
Collector Power Dissipation
@ TC=25℃
60
W
TJ
Junction Temperature
150
℃
-55~150
℃
B
Tstg
Storage Temperature Range
INCHANGE Semiconductor
Product Specification
2SA1693
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -50mA ; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
-1.5
V
ICBO
Collector Cutoff Current
VCB= -80V ; IE= 0
-10
μA
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
-10
μA
hFE
DC Current Gain
IC= -2A ; VCE= -4V
COB
Output Capacitance
IE= 0 ; VCB= -10V;f= 1.0MHz
150
pF
Current-Gain—Bandwidth Product
IE= 0.5A ; VCE= -12V
20
MHz
0.18
μs
1.1
μs
0.21
μs
fT
CONDITIONS
MIN
TYP.
MAX
-80
UNIT
V
B
50
180
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
‹
IC= -3A ,RL= 10Ω,
IB1= -IB2= -0.3A,VCC= -30V
Fall Time
hFE Classifications
O
P
Y
50-100
70-140
90-180
2