US5U29 Transistor 2.5V Drive Pch+SBD MOS FET US5U29 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions (Unit : mm) TUMT5 2.0 0.2 1.7 (2) (3) 0~0.1 0.2 (1) 0.77 (4) 2.1 (5) 1pin mark zFeatures 1) The US5U29 combines Pch MOS FET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward voltage. 0.15Max. 0.85Max. 1.3 0.65 0.65 0.3 0.17 Abbreviated symbol : U29 zApplications Load switch, DC/DC conversion zPackaging specifications Package Type Code Basic ordering unit (pieces) zEquivalent circuit Taping (5) (4) TR 3000 ∗2 US5U29 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain Rev.C 1/4 US5U29 Transistor zAbsolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗3 Limits −20 ±12 ±1 ±4 −0.4 −4 150 0.7 Unit V V A A A A °C W / ELEMENT <Di> Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation VRM VR IF IFSM Tj PD 25 20 0.7 3.0 150 0.5 V V A A °C W / ELEMENT <MOSFET AND Di> Total power dissipation Range of Storage temperature PD ∗3 Tstg 1.0 −55 to +150 W / TOTAL °C Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Channel temperature Power dissipation ∗2 ∗3 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board zElectrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 − IDSS Zero gate voltage drain current VGS (th) −0.7 Gate threshold voltage − ∗ Static drain-source on-starte − RDS (on) resistance − ∗ 0.7 Yfs Forward transfer admittance − Ciss Input capacitance − Coss Output capacitance − Crss Reverse transfer capacitance ∗ − td (on) Turn-on delay time ∗ − tr Rise time ∗ − td (off) Turn-off delay time ∗ − tf Fall time − Qg ∗ Total gate charge − Qgs ∗ Gate-source charge − Qgd ∗ Gate-drain charge Typ. − − − − 280 310 570 − 150 20 20 9 8 25 10 2.1 0.5 0.5 Max. ±10 − −1 −2.0 390 430 800 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±12V, VDS=0V ID=−1mA, VGS=0V VDS=−20V, VGS=0V VDS=−10V, ID=−1mA ID=−1A, VGS=−4.5V ID=−1A, VGS=−4V ID=−0.5A, VGS=−2.5V VDS=−10V, ID=−0.5A VDS=−10V VGS=0V f=1MHz ID=−0.5A VDD −15V VGS=−4.5V RL=30Ω RG=10Ω VDD −15V VGS=−4.5V ID=−1A RG=10Ω RL=15Ω ∗ Pulsed <Body diode (source−drain)> Parameter Forward voltage Symbol Min. Typ. Max. Unit VSD − − −1.2 V Symbol Min. − − Typ. − − Max. 0.49 200 Unit V µA Conditions IS=−0.4A, VGS=0V <Di > Parameter Forward voltage drop Reverse current VF IR Conditions IF=0.7A VR=20V Rev.C 2/4 US5U29 Transistor 10000 Static Drain−Source On−State Resistance RDS(on)[mΩ] 10 VDS=−10V Pulsed Ta=125°C 75°C 25°C −20°C Ta=125°C 75°C 25°C −20°C 1000 0.01 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 100 0.01 0.1 Static Drain−Source On−State Resistance RDS(on)[mΩ] Static Drain−Source On−State Resistance RDS(on)[mΩ] Ta=125°C 75°C 25°C −20°C 1000 1 Fig.4 Static Drain−Source On−State Resistance vs.Drain−Current ( ΙΙΙ ) Capacitance : C [pF] Reverse Drain Current : −IS[A] Ta=125°C 75°C 25°C −20°C 0.1 ID=−0.5A −1A 10 Fig.3 Static Drain−Source On−State Resistance vs.Drain Current ( ΙΙ ) Ta=25 C Pulsed 1000 250 0 2 4 6 8 10 VGS=−2.5V −4.0V −4.5V 100 0.01 12 0.1 1 10 Drain Current : −ID[A] Gate−Source Voltage : −VGS[V] Fig.6 Static Drain−Source On−State Resistance vs.Drain Current Fig.5 Static Drain−Source On−State Resistance vs.Gate−Source Voltage 1000 VGS=0V Pulsed 1 10000 500 0 10 0.1 Drain Current : −ID[A] Ta=25°C Pulsed 750 Drain Current : −ID[A] 10 100 0.01 10 1000 VGS=−2.5V Pulsed 0.1 1 Fig.2 Static Drain−Source On−State Resistance vs.Drain Current ( Ι ) Fig.1 Typical Transfer Characteristics 100 0.01 Ta=125°C 75°C 25°C −20°C 1000 Drain Current : −ID[A] Gate−Source Voltage : VGS[V] 10000 VGS=−4V Pulsed Static Drain-Source On−State Resistance RDS(on)[mΩ] 0.1 10000 VGS=−4.5V Pulsed Ta=25 C f=1MHZ VGS=0V 10000 Ta=25°C VDD=−15V VGS=−4.5V RG=10Ω Pulsed 1000 Switching Time : t [ns] Drain Current : −ID (A) 1 1 Static Drain−Source On−State Resistance RDS(on)[mΩ] zElectrical characteristic curves Ciss 100 tf 100 td(off) 10 td(on) tr Crss Coss 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source−Drain Voltage : −VSD[V] Fig.7 Reverse Drain Current vs. Source-Drain Current 1.6 10 0.01 0.1 1 10 100 Drain−Source Voltage : −VDS[V] Fig.8 Typical Capactitance vs.Drain−Source Voltage 1 0.01 0.1 1 10 Drain Current : −ID[A] Fig.9 Switching Characteristics Rev.C 3/4 US5U29 Transistor Gate-Source Voltage: -VGS [V] 6 5 4 3 2 1000 100 100 Ta=125°C 75°C 25°C −20°C 125°C 10 Reverse Current : IR[µA] Ta=25 C VDD=−15V ID=−1A RG=10Ω Pulsed 7 Forward Current : IF [mA] 8 10 75°C 1 0.1 25°C 0.01 1 −20°C 0.001 1 0 0.0001 0.1 0 0.5 1 1.5 2 2.5 0 3 0.1 0.2 0.3 0.4 0.5 0 0.6 10 20 30 40 Reverse Voltage : VR[V] Forward Voltage :VF [V] Total Gate Charge : Qg[nC] Fig.10 Dynamic Input Characteristics Fig.12 Reverse Temperature Characteristics Fig.11 Forward Temperature Characteristics zMeasurement circuits Pulse Width VGS 10% 50% 50% 90% 10% 10% VGS ID D.U.T. RG VDS 90% 90% VDS RL VDD td(on) tr tf td(off) ton toff Fig.14 Switching Waveforms Fig.13 Switching Time Measurement Circuit VG Qg VGS VGS ID VDS Qgs IG(Const) RG D.U.T. Qgd RL VDD Charge Fig.15 Gate Charge Measurement Circuit Fig.16 Gate Charge Waveforms Rev.C 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1