ROHM US5U29

US5U29
Transistor
2.5V Drive Pch+SBD MOS FET
US5U29
zStructure
Silicon P-channel MOS FET
Schottky Barrier DIODE
zExternal dimensions (Unit : mm)
TUMT5
2.0
0.2
1.7
(2)
(3)
0~0.1
0.2
(1)
0.77
(4)
2.1
(5)
1pin mark
zFeatures
1) The US5U29 combines Pch MOS FET with a
Schottky barrier diode in a TUMT5 package.
2) Low on-resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
0.15Max.
0.85Max.
1.3
0.65 0.65
0.3
0.17
Abbreviated symbol : U29
zApplications
Load switch, DC/DC conversion
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
zEquivalent circuit
Taping
(5)
(4)
TR
3000
∗2
US5U29
∗1
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
(3)
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
Rev.C
1/4
US5U29
Transistor
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Tch
PD ∗3
Limits
−20
±12
±1
±4
−0.4
−4
150
0.7
Unit
V
V
A
A
A
A
°C
W / ELEMENT
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
VRM
VR
IF
IFSM
Tj
PD
25
20
0.7
3.0
150
0.5
V
V
A
A
°C
W / ELEMENT
<MOSFET AND Di>
Total power dissipation
Range of Storage temperature
PD ∗3
Tstg
1.0
−55 to +150
W / TOTAL
°C
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Channel temperature
Power dissipation
∗2
∗3
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol Min.
IGSS
−
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS −20
−
IDSS
Zero gate voltage drain current
VGS (th) −0.7
Gate threshold voltage
−
∗
Static drain-source on-starte
−
RDS (on)
resistance
−
∗
0.7
Yfs
Forward transfer admittance
−
Ciss
Input capacitance
−
Coss
Output capacitance
−
Crss
Reverse transfer capacitance
∗
−
td (on)
Turn-on delay time
∗
−
tr
Rise time
∗
−
td (off)
Turn-off delay time
∗
−
tf
Fall time
−
Qg ∗
Total gate charge
−
Qgs ∗
Gate-source charge
−
Qgd ∗
Gate-drain charge
Typ.
−
−
−
−
280
310
570
−
150
20
20
9
8
25
10
2.1
0.5
0.5
Max.
±10
−
−1
−2.0
390
430
800
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±12V, VDS=0V
ID=−1mA, VGS=0V
VDS=−20V, VGS=0V
VDS=−10V, ID=−1mA
ID=−1A, VGS=−4.5V
ID=−1A, VGS=−4V
ID=−0.5A, VGS=−2.5V
VDS=−10V, ID=−0.5A
VDS=−10V
VGS=0V
f=1MHz
ID=−0.5A
VDD −15V
VGS=−4.5V
RL=30Ω
RG=10Ω
VDD −15V VGS=−4.5V
ID=−1A
RG=10Ω
RL=15Ω
∗ Pulsed
<Body diode (source−drain)>
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
Unit
VSD
−
−
−1.2
V
Symbol
Min.
−
−
Typ.
−
−
Max.
0.49
200
Unit
V
µA
Conditions
IS=−0.4A, VGS=0V
<Di >
Parameter
Forward voltage drop
Reverse current
VF
IR
Conditions
IF=0.7A
VR=20V
Rev.C
2/4
US5U29
Transistor
10000
Static Drain−Source On−State Resistance
RDS(on)[mΩ]
10
VDS=−10V
Pulsed
Ta=125°C
75°C
25°C
−20°C
Ta=125°C
75°C
25°C
−20°C
1000
0.01
0.001
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
100
0.01
0.1
Static Drain−Source On−State Resistance
RDS(on)[mΩ]
Static Drain−Source On−State Resistance
RDS(on)[mΩ]
Ta=125°C
75°C
25°C
−20°C
1000
1
Fig.4 Static Drain−Source On−State
Resistance vs.Drain−Current ( ΙΙΙ )
Capacitance : C [pF]
Reverse Drain Current : −IS[A]
Ta=125°C
75°C
25°C
−20°C
0.1
ID=−0.5A
−1A
10
Fig.3 Static Drain−Source On−State
Resistance vs.Drain Current ( ΙΙ )
Ta=25 C
Pulsed
1000
250
0
2
4
6
8
10
VGS=−2.5V
−4.0V
−4.5V
100
0.01
12
0.1
1
10
Drain Current : −ID[A]
Gate−Source Voltage : −VGS[V]
Fig.6 Static Drain−Source On−State
Resistance vs.Drain Current
Fig.5 Static Drain−Source On−State
Resistance vs.Gate−Source Voltage
1000
VGS=0V
Pulsed
1
10000
500
0
10
0.1
Drain Current : −ID[A]
Ta=25°C
Pulsed
750
Drain Current : −ID[A]
10
100
0.01
10
1000
VGS=−2.5V
Pulsed
0.1
1
Fig.2 Static Drain−Source On−State
Resistance vs.Drain Current ( Ι )
Fig.1 Typical Transfer Characteristics
100
0.01
Ta=125°C
75°C
25°C
−20°C
1000
Drain Current : −ID[A]
Gate−Source Voltage : VGS[V]
10000
VGS=−4V
Pulsed
Static Drain-Source On−State Resistance
RDS(on)[mΩ]
0.1
10000
VGS=−4.5V
Pulsed
Ta=25 C
f=1MHZ
VGS=0V
10000
Ta=25°C
VDD=−15V
VGS=−4.5V
RG=10Ω
Pulsed
1000
Switching Time : t [ns]
Drain Current : −ID (A)
1
1
Static Drain−Source On−State Resistance
RDS(on)[mΩ]
zElectrical characteristic curves
Ciss
100
tf
100
td(off)
10
td(on)
tr
Crss
Coss
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Source−Drain Voltage : −VSD[V]
Fig.7 Reverse Drain Current
vs. Source-Drain Current
1.6
10
0.01
0.1
1
10
100
Drain−Source Voltage : −VDS[V]
Fig.8 Typical Capactitance
vs.Drain−Source Voltage
1
0.01
0.1
1
10
Drain Current : −ID[A]
Fig.9 Switching Characteristics
Rev.C
3/4
US5U29
Transistor
Gate-Source Voltage: -VGS [V]
6
5
4
3
2
1000
100
100
Ta=125°C
75°C
25°C
−20°C
125°C
10
Reverse Current : IR[µA]
Ta=25 C
VDD=−15V
ID=−1A
RG=10Ω
Pulsed
7
Forward Current : IF [mA]
8
10
75°C
1
0.1
25°C
0.01
1
−20°C
0.001
1
0
0.0001
0.1
0
0.5
1
1.5
2
2.5
0
3
0.1
0.2
0.3
0.4
0.5
0
0.6
10
20
30
40
Reverse Voltage : VR[V]
Forward Voltage :VF [V]
Total Gate Charge : Qg[nC]
Fig.10 Dynamic Input Characteristics
Fig.12 Reverse Temperature Characteristics
Fig.11 Forward Temperature Characteristics
zMeasurement circuits
Pulse Width
VGS
10%
50%
50%
90%
10%
10%
VGS
ID
D.U.T.
RG
VDS
90%
90%
VDS
RL
VDD
td(on)
tr
tf
td(off)
ton
toff
Fig.14 Switching Waveforms
Fig.13 Switching Time Measurement Circuit
VG
Qg
VGS
VGS
ID
VDS
Qgs
IG(Const)
RG
D.U.T.
Qgd
RL
VDD
Charge
Fig.15 Gate Charge Measurement Circuit
Fig.16 Gate Charge Waveforms
Rev.C
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1