QS5U26 Transistor Small switching (−20V, −1.5A) QS5U26 !External dimensions (Units : mm) !Features 1) The QS5U26 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Pch Treueh MOSFET have a low on-state resisternce with a fast switching. 3) Pch Treueh MOSFET is neucted a low voltage drive (2.5V). 4) The independently connected Schottky barrier diode have a low forward voltage. 2.8 TSMT5 (5) (1) 0.4 1.0MAX 0.7 0~0.1 0.3~0.6 0.85 (4) (2) (3) 0.16 (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain 0.95 0.95 1.9 2.9 1.6 Each lead has same dimensions Abbreviated symbol : U26 !Applications load switch, DC/DC conversion !Equivalent circuit !Structure •Silicon P-channel MOS FET •Schottky Barrier DIODE (5) (4) ∗2 !Packaging specifications Package Taping Code Type ∗1 TR Basic ordering unit (pieces) 3000 (1) ∗1 ESD protection diode ∗2 Body diode QS5U26 (2) (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain ∗ A protection diode has been buitt in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. !Absolute maximum ratings (Ta=25°C) <MOSFET> Symbol VDSS VGSS ID IDP IS ISP Tch Limits −20 ±12 ±1.5 ±6.0 −0.75 −3.0 150 Unit V V A A ∗1 A A ∗1 °C Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Symbol VRM VR IF IFSM Tj Limits 30 20 0.5 2.0 125 Unit V V A A ∗2 °C Parameter Total power dissipatino Symbol PD Limits 1.0 Tstg −40~+125 Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Channel temperature <Di > Parameter <MOSFET AND Di > Range of strage temperature Unit W/TOTAL∗3 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz • 1cyc. ∗3 Mounted on a ceramic board. 1/3 QS5U26 Transistor !Electrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Min. Gate-source leakage − IGSS Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) −0.7 − Static drain-source on-starte RDS (on) − resistance − Forward transfer admittance Yfs 1.0 Input capacitance Ciss − − Output capacitance Coss − Reverse transfer capacitance Crss Tum-on delay time − td (on) − Rise time tr Tum-off delay time − td (off) − Fall time tf Qg − Total gate charge Gate-source charge − Qgs Qgd − Gate-drain charge Typ. − − − − 160 180 260 − 325 60 40 10 10 35 10 4.2 1.0 1.1 Max. ±10 − −1 −2.0 200 240 340 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±12V, VDS=0V ID=−1mA, VGS=0V VDS=−20V, VGS=0V VDS=−10V, ID=−1mA ID=−1.5A, VGS=−4.5V ∗ ID=−1.5A, VGS=−4V ID=−0.75A, VGS=−2.5V ∗ VDS=−10V, ID=−0.75A VDS=−10V VGS=0V f=1MHz ID=−0.75A ∗ VDD −15V ∗ VGS=−4.5V ∗ RL=20Ω RGS=10Ω ∗ VDD −15V VGS=−4.5V ID=−1.5A ∗ Pulsed !Body diode (Source-drain) <MOSFET> Parameter Forward voltage Symbol VSD Min. − Typ. − Max. −1.2 Unit V Conditions IS=−0.75A, VGS=0V Symbol Min. Typ. Max. VF VF IR − − − − − − 0.36 0.47 100 Unit V V µA IF=0.1A IF=0.5A VR=20V <Di > Parameter Forward voltage Reverse leakage Conditions 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VDS=−10V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 0.1 0.01 0 0.5 1 1.5 2 2.5 3 3.5 4 VGS=−4.5V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 10 0.1 1 10 1000 100 VGS=−4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 10 0.1 1 10 GATE-SOURCE VOLTAGE : −VGS (V) DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) 1000 100 10 0.1 VGS=−2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 1 10 DRAIN CURRENT : −ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) 400 Ta=25°C Pulsed ID=−0.75A ID=−1.5A 350 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 0.001 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : −ID (A) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) !Electrical characteristic curves 300 250 200 150 100 50 0 0 2 4 6 8 10 12 1000 100 10 0.1 Ta=25°C Pulsed VGS=−2.5V VGS=−4.0V VGS=−4.5V 1 10 GATE-SOURCE VOLTAGE : −VGS (V) DRAIN CURRENT : −ID (A) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ( ) 2/3 QS5U26 1 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 0.1 0.01 0 0.5 1 1.5 1000 Ciss 100 Coss Crss 10 0.01 2 1000 Ta=25°C f=1MHZ VGS=0V 0.1 1 10 Ta=25°C VDD=−15V VGS=−4.5V RG=10Ω Pulsed 100 td(on) 10 tr 1 0.01 100 tf td(off) 0.1 1 10 SOURCE-DRAIN VOLTAGE : −VSD (V) DRAIN-SOURCE VOLTAGE : −VDS (V) DRAIN CURRENT : −ID (A) Fig.7 Reverse Drain Current vs. Source-Drain Current Fig.8 Typical Capacitance vs. Drain-Source Voltage Fig.9 Switching Characteristics 8 GATE-SOURCE VOLTAGE : VGS (V) 10000 VGS=0V Pulsed SWITCHING TIME : t (ns) 10 CAPACITANCE : C (pF) REVERCE DRAIN CURRENT : −IDR (A) Transistor Ta=25°C VDD=−15V ID=−1.5A RG=10Ω Pulsed 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 TOTAL GATE CHARGE : Qg (nC) Fig.10 Dynamic Input Characteristics !Measurement circuits Pulse Width VGS ID VDS VGS 10% 50% 90% RL D.U.T. 50% 10% 10% RG VDD VDS 90% td(on) tr ton Fig.11 Switching Time Measurement Circuit 90% td(off) tr toff Fig.12 Switching Waveforms VG VGS ID VDS RL IG(Const) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.13 Gate Charge Measurement Circuit Fig.14 Gate Charge Waveforms 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0