ROHM QS5U36

QS5U36
Transistors
1.5V Drive Nch+SBD MOSFET
QS5U36
zDimensions (Unit : mm)
zStructure
Silicon N-channel MOSFET
Schottky Barrier DIODE
TSMT5
zFeatures
1) The QS5U36 combines Nch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (1.5V).
4) The Independently connected Schottky barrier diode
has low forward voltage.
Each lead has same dimensions
Abbreviated symbol : U36
zApplications
Switching
zEquivalent circuit
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
Taping
(5)
(4)
TR
3000
QS5U36
∗2
∗1
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
(3)
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
1/5
QS5U36
Transistors
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Tch
PD ∗3
Limits
20
±10
±2.5
±5.0
0.7
5.0
150
0.9
Unit
V
V
A
A
A
A
°C
W/ELEMENT
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
VRM
VR
IF
IFSM
Tj
PD
25
20
0.7
3.0
150
0.7
V
V
A
A
°C
W/ELEMENT
<MOSFET AND Di>
Total power dissipation
Range of storage temperature
PD ∗3
Tstg
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Channel temperature
Power dissipation
∗2
∗3
1.25
−55 to +150
W / TOTAL
°C
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board
zElectrical characteristics (Ta=25°C)
<MOSFET>
Symbol
Parameter
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RDS (on) ∗
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−
20
−
0.3
−
−
−
−
2.7
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
58
74
95
120
−
280
65
35
6
15
30
15
3.5
0.8
0.7
Max.
±10
−
1
1.3
81
104
133
240
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
−
−
1.2
V
−
−
−
−
0.49
200
V
µA
Conditions
VGS=±10V / VDS=0V
ID=1mA, / VGS=0V
VDS=20V / VGS=0V
VDS=10V / ID=1mA
ID=2.5A, VGS=4.5V
ID=2.5A, VGS=2.5V
ID=1.3A, VGS=1.8V
ID=0.5A, VGS=1.5V
VDS=10V, ID=2.5A
VDS=10V
VGS=0V
f=1MHz
ID=1.3A
VDD 10V
VGS=4.5V
RL 7.7Ω
RG=10Ω
ID=2.5A, VDD 10V
VGS=4.5V
RL 4Ω, RG=10Ω
∗Pulsed
<MOSFET>Body diode (source-drain)
VSD ∗
Forward voltage
IS=0.7A / VGS=0V
∗Pulsed
<Di>
Forward voltage
Reverse current
VF
IR
IF=0.7A
VR=20V
2/5
QS5U36
Transistors
zElectrical characteristic curves
<MOSFET>
1000
Ciss
100
Coss
Crss
0.1
1
10
100
td(off)
10
td(on)
tr
0.1
ID=1.3A
75
50
25
0
0
1
GATE-SOURCE VOLTAGE : VGS (V)
VGS=1.5V
VGS=1.8V
VGS=2.5V
VGS=4.5V
100
10
0.01
0.1
1
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
10
2
3
4
5
6
7
4
8
5
VGS=0V
Pulsed
9
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
1
0.1
0.01
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : VGS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-source Voltage
Fig.6 Source Current vs.
Source-Drain Voltage
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Ta=25°C
Pulsed
3
10
100
Fig.4 Typical Transfer Characteristics
2
Ta=25°C
Pulsed
ID=2.5A
1.5
1
Fig.3 Dynamic Input Characteristics
SOURCE CURRENT : IS (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (mΩ)
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
1000
0
125
VDS=10V
Pulsed
1.0
1
TOTAL GATE CHARGE : Qg (nC)
Fig.2 Switching Characteristics
0.01
0.5
2
10
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
0.1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
1
DRAIN CURRENT : ID (A)
1
3
0
1
0.01
100
DRAIN-SOURCE VOLTAGE : VDS (V)
10
DRAIN CURRENT : ID (A)
tf
Ta=25°C
VDD=10V
5 ID=2.5A
RG=10Ω
Pulsed
4
VGS=1.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
100
10
0.01
0.1
1
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
10
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
10
0.01
6
Ta=25°C
VDD=10V
VGS=4.5V
RG=10Ω
Pulsed
GATE-SOURCE VOLTAGE : VGS (V)
Ta=25°C
f=1MHz
VGS=0V
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
1000
VGS=1.8V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
100
10
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
3/5
QS5U36
VGS=2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
100
10
0.01
0.1
1
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
1000
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
100
10
0.01
DRAIN CURRENT : ID (A)
Ta = 75℃
Ta = 25℃
100
10
Ta= - 25℃
1
0.1
0.01
0
5
10
15
20
VDS=10V
Pulsed
1
0.1
0.01
10
25
Ta=−25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.12 Forward Transfer Admittance
vs. Drain Current
1
Ta = 125℃
pulsed
10000
1000
1
Fig.11 Static Drain-Source
On-State Resistance
vs. Drain Current ( )
FORWARD CURRENT : IF(A)
REVERSE CURRENT : IR [uA]
pulsed
0.1
10
DRAIN CURRENT : ID (A)
Fig.10 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι )
100000
VGS=4.5V
Pulsed
FORWARD TRANSFER ADMITTANCE
Yfs (S)
Transistors
0.1
Ta = 125℃
Ta = 75℃
Ta = 25℃
0.01
Ta= - 25℃
0.001
REVERSE VOLTAGE : VR [V]
Fig.13 Reverse Current vs. Reverse Voltage
0
0.1
0.2
0.3
0.4
0.5
0.6
FORW ARD VOLTAGE : VF(V)
Fig.14 Forward Current vs. Forward Voltage
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature,
and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the
surrounding temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
4/5
QS5U36
Transistors
zMeasurement circuit
Pulse Width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
10%
RG
VDD
90%
td(on)
ton
Fig.15 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.16 Switching Waveforms
VG
VGS
ID
VDS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.17 Gate Charge Measurement Circuit
Fig.18 Gate Charge Waveform
5/5
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0