QS5U36 Transistors 1.5V Drive Nch+SBD MOSFET QS5U36 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET Schottky Barrier DIODE TSMT5 zFeatures 1) The QS5U36 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive (1.5V). 4) The Independently connected Schottky barrier diode has low forward voltage. Each lead has same dimensions Abbreviated symbol : U36 zApplications Switching zEquivalent circuit zPackaging specifications Package Type Code Basic ordering unit (pieces) Taping (5) (4) TR 3000 QS5U36 ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain 1/5 QS5U36 Transistors zAbsolute maximum ratings (Ta=25°C) <MOSFET> Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗3 Limits 20 ±10 ±2.5 ±5.0 0.7 5.0 150 0.9 Unit V V A A A A °C W/ELEMENT <Di> Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation VRM VR IF IFSM Tj PD 25 20 0.7 3.0 150 0.7 V V A A °C W/ELEMENT <MOSFET AND Di> Total power dissipation Range of storage temperature PD ∗3 Tstg Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Channel temperature Power dissipation ∗2 ∗3 1.25 −55 to +150 W / TOTAL °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board zElectrical characteristics (Ta=25°C) <MOSFET> Symbol Parameter Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on) ∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 20 − 0.3 − − − − 2.7 − − − − − − − − − − Typ. − − − − 58 74 95 120 − 280 65 35 6 15 30 15 3.5 0.8 0.7 Max. ±10 − 1 1.3 81 104 133 240 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC − − 1.2 V − − − − 0.49 200 V µA Conditions VGS=±10V / VDS=0V ID=1mA, / VGS=0V VDS=20V / VGS=0V VDS=10V / ID=1mA ID=2.5A, VGS=4.5V ID=2.5A, VGS=2.5V ID=1.3A, VGS=1.8V ID=0.5A, VGS=1.5V VDS=10V, ID=2.5A VDS=10V VGS=0V f=1MHz ID=1.3A VDD 10V VGS=4.5V RL 7.7Ω RG=10Ω ID=2.5A, VDD 10V VGS=4.5V RL 4Ω, RG=10Ω ∗Pulsed <MOSFET>Body diode (source-drain) VSD ∗ Forward voltage IS=0.7A / VGS=0V ∗Pulsed <Di> Forward voltage Reverse current VF IR IF=0.7A VR=20V 2/5 QS5U36 Transistors zElectrical characteristic curves <MOSFET> 1000 Ciss 100 Coss Crss 0.1 1 10 100 td(off) 10 td(on) tr 0.1 ID=1.3A 75 50 25 0 0 1 GATE-SOURCE VOLTAGE : VGS (V) VGS=1.5V VGS=1.8V VGS=2.5V VGS=4.5V 100 10 0.01 0.1 1 DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) 10 2 3 4 5 6 7 4 8 5 VGS=0V Pulsed 9 10 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 1 0.1 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-source Voltage Fig.6 Source Current vs. Source-Drain Voltage 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Ta=25°C Pulsed 3 10 100 Fig.4 Typical Transfer Characteristics 2 Ta=25°C Pulsed ID=2.5A 1.5 1 Fig.3 Dynamic Input Characteristics SOURCE CURRENT : IS (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 1000 0 125 VDS=10V Pulsed 1.0 1 TOTAL GATE CHARGE : Qg (nC) Fig.2 Switching Characteristics 0.01 0.5 2 10 Fig.1 Typical Capacitance vs. Drain-Source Voltage 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1 DRAIN CURRENT : ID (A) 1 3 0 1 0.01 100 DRAIN-SOURCE VOLTAGE : VDS (V) 10 DRAIN CURRENT : ID (A) tf Ta=25°C VDD=10V 5 ID=2.5A RG=10Ω Pulsed 4 VGS=1.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 10 0.01 0.1 1 DRAIN CURRENT : ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) 10 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 0.01 6 Ta=25°C VDD=10V VGS=4.5V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS (V) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 VGS=1.8V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) 3/5 QS5U36 VGS=2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 10 0.01 0.1 1 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1000 10 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 10 0.01 DRAIN CURRENT : ID (A) Ta = 75℃ Ta = 25℃ 100 10 Ta= - 25℃ 1 0.1 0.01 0 5 10 15 20 VDS=10V Pulsed 1 0.1 0.01 10 25 Ta=−25°C Ta=25°C Ta=75°C Ta=125°C 0.1 1 10 DRAIN CURRENT : −ID (A) Fig.12 Forward Transfer Admittance vs. Drain Current 1 Ta = 125℃ pulsed 10000 1000 1 Fig.11 Static Drain-Source On-State Resistance vs. Drain Current ( ) FORWARD CURRENT : IF(A) REVERSE CURRENT : IR [uA] pulsed 0.1 10 DRAIN CURRENT : ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current (Ι ) 100000 VGS=4.5V Pulsed FORWARD TRANSFER ADMITTANCE Yfs (S) Transistors 0.1 Ta = 125℃ Ta = 75℃ Ta = 25℃ 0.01 Ta= - 25℃ 0.001 REVERSE VOLTAGE : VR [V] Fig.13 Reverse Current vs. Reverse Voltage 0 0.1 0.2 0.3 0.4 0.5 0.6 FORW ARD VOLTAGE : VF(V) Fig.14 Forward Current vs. Forward Voltage zNotice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 4/5 QS5U36 Transistors zMeasurement circuit Pulse Width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. 10% RG VDD 90% td(on) ton Fig.15 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.16 Switching Waveforms VG VGS ID VDS RL IG(Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.17 Gate Charge Measurement Circuit Fig.18 Gate Charge Waveform 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0