Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier 8 5 S2 G2 9 G1 8900E xxx S2 4 RoHS • Battery Protection Circuit - 1-2 Cell Li+/LiP Battery Pack for Portable Devices Backside View Bump Side View TrenchFET® Power MOSFET Ultra-Low RSS(on) ESD Protected: 4000 V MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area APPLICATIONS MICRO FOOT S2 • • • • IS1S2 (A) G1 Device Marking: 4 kΩ 8900E = P/N Code xxx = Date/Lot Traceability Code 4 kΩ S1 10 3 S1 S1 1 2 S1 G2 Ordering Information: Si8900EDB-T2-E1 (Lead (Pb)-free) N-Channel S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Source1- Source2 Voltage Gate-Source Voltage Continuous Source1- Source2 Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Package Reflow Conditions 20 VGS ± 12 IS1S2 PD Unit V 7 5.4 5.1 3.9 A 50 1.8 1 0.9 0.5 TJ, Tstg Operating Junction and Storage Temperature Range c Steady State ISM Pulsed Source1- Source2 Current Maximum Power Dissipationa 5s VS1S2 - 55 to 150 IR/Convection W °C 260 THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta b t≤5s Steady State Steady State Maximum Junction-to-Foot Notes: a. Surface Mounted on 1" x 1" FR4 board. b. The foot is defined as the top surface of the package. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. Document Number: 71830 S-82119-Rev. G, 08-Sep-08 RthJA RthJF Typical Maximum 55 70 95 120 12 15 Unit °C/W www.vishay.com 1 Si8900EDB Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VSS = VGS, ID = 1.1 mA 0.45 Typ. Max. Unit Static VGS(th) Gate Threshold Voltage 1.0 V VSS = 0 V, VGS = ± 4.5 V ±4 µA VSS = 0 V, VGS = ± 12 V ± 10 mA VSS = 20 V, VGS = 0 V 1 VSS = 20 V, VGS = 0 V, TJ = 85 °C 5 IGSS Gate-Body Leakage Zero Gate Voltage Drain Current IS1S2 On-State Drain Currenta IS(on) VSS = 5 V, VGS = 4.5 V a A 0.020 0.024 VGS = 3.7 V, ISS = 1 A 0.022 0.026 VGS = 2.5 V, ISS = 1 A 0.026 0.034 VGS = 1.8 V, ISS = 1 A 0.032 0.040 VSS = 10 V, ISS = 1 A 31 3 5 VSS = 10 V, RL = 10 Ω ISS ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω 4.5 7 55 85 15 25 gfs Forward Transconductance 5 VGS = 4.5 V, ISS = 1 A Source1- Source2 On State Resistancea RS1S2(on) µA Ω S b Dynamic td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time µs Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 000 1000 I GSS - Gate Current (µA) I GSS - Gate Current (mA) IGSS at 25 °C (mA) 16 12 8 4 100 TJ = 150 °C 10 1 TJ = 25 °C 0.1 0 0.01 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage www.vishay.com 2 15 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Document Number: 71830 S-82119-Rev. G, 08-Sep-08 Si8900EDB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 VGS = 5 thru 1.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 6 4 1V 6 4 TC = 125 °C 2 2 0 0 0.0 25 °C - 55 °C 0 1 2 3 4 0.2 0.4 0.6 0.8 1.0 1.2 VGS - Gate-to-Source Voltage (V) V DS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 0.05 1.6 0.04 1.4 VGS = 1.8 V 0.03 R DS(on) - On-Resistance (Normalized) R DS(on) - On-Resistance (Ω) VGS = 4.5 V IS1S2 = 1 A VGS = 2.5 V VGS = 3.7 V 0.02 VGS = 4.5 V 0.01 0.00 0 2 4 6 8 1.2 1.0 0.8 0.6 - 50 10 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) ID - Drain Current (A) On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 0.2 0.10 IS1S2 = 1.1 mA IS1S2 = 5 A V GS(th) Variance (V) RDS(on) - On-Resistance (Ω) 0.1 0.08 0.06 IS1S2 = 1 A 0.04 0.02 0.0 - 0.1 - 0.2 - 0.3 0.00 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Document Number: 71830 S-82119-Rev. G, 08-Sep-08 5 - 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) Threshold Voltage www.vishay.com 3 Si8900EDB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 25 Power (W) 20 15 10 5 0 0.01 0.1 1 10 100 1000 Time (s) Single Pulse Power, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 95 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (s) 10- 1 1 Normalized Thermal Transient Impedance, Junction-to-Foot www.vishay.com 4 Document Number: 71830 S-82119-Rev. G, 08-Sep-08 Si8900EDB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 10-BUMP (2 x 5, 0.8 mm PITCH) 10 x ∅ 0.30 ~ 0.31 Note 3 Solder Mask ∅ ~ 0.40 A e A2 Silicon A1 Bump Note 2 e Recommended Land b Diamerter S2 8900E xxx E Mark on Backside of Die e S1 e D Notes (Unless Otherwise Specified): 1. Laser mark on the silicon die back, coated with a thin metal. 2. Bumps are 95.5Sn/3.8Ag/0.7Cu. 3. Non-solder mask defined copper landing pad. Dim. Millimetersa Inches Min. Max. Min. Max. A 0.600 0.650 0.0236 0.0256 A1 0.260 0.290 0.102 0.0114 A2 0.340 0.360 0.0134 0.0142 b 0.370 0.410 0.0146 0.0161 D 4.050 4.060 0.1594 0.1598 E 1.980 2.000 0.0780 0.0787 e 0.750 0.850 0.0295 0.0335 S1 0.430 0.450 0.0169 0.0177 S2 0.580 0.600 0.0228 0.0236 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71830. Document Number: 71830 S-82119-Rev. G, 08-Sep-08 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000