Si8405DB Vishay Siliconix 12 V P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • TrenchFET® Power MOSFET RDS(on) () ID (A) 0.055 at VGS = - 4.5 V - 4.9 0.070 at VGS = - 2.5 V - 4.4 0.090 at VGS = - 1.8 V -4 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MICRO FOOT Bump Side View 3 Backside View APPLICATIONS D S G S • PA, Battery and Load Switch 2 D • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area 8405 xxx • Battery Charger Switch G 4 1 Device Marking: 8405 xxx = Date/Lot Traceability Code D Ordering Information: Si8405DB-T1-E1 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C Maximum Power Dissipationa TA = 70 °C - 3.6 - 3.9 - 2.8 - 10 - 2.5 A - 1.3 2.77 1.47 1.77 0.94 TJ, Tstg Operating Junction and Storage Temperature Range Conditionsb PD V - 4.9 IDM Pulsed Drain Current Package Reflow ID Unit - 55 to 150 IR/Convection W °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (drain) Symbol t5s Steady State Steady State RthJA RthJF Typical Maximum 35 45 72 85 16 20 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. c. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. Document Number: 71814 S13-1847-Rev. F, 19-Aug-13 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8405DB Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VGS(th) VDS = VGS, ID = - 250 µA - 0.45 - 0.7 - 0.95 V nA Static Gate Threshold Voltage IGSS Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Diode Forward Voltagea ± 100 -1 VDS = - 12 V, VGS = 0 V, TJ = 70 °C -5 VDS - 5 V, VGS = - 4.5 V RDS(on) Forward Transconductancea VDS = 0 V, VGS = ± 8 V VDS = - 12 V, VGS = 0 V µA -5 A VGS = - 4.5 V, ID = - 1 A 0.045 0.055 VGS = - 2.5 V, ID = - 1 A 0.055 0.070 VGS = - 1.8 V, ID = - 1 A 0.073 0.090 gfs VDS = - 10 V, ID = - 1 A 6 VSD IS = - 1 A, VGS = 0 V - 0.73 - 1.1 14 21 VDS = - 6 V, VGS = - 4.5 V, ID = - 1 A 1.7 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.5 Turn-On Delay Time td(on) 16 VDD = - 6 V, RL = 6 ID - 1 A, VGEN = - 4.5 V, Rg = 6 tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr IF = - 1 A, dI/dt = 100 A/µs nC 25 32 50 120 180 80 120 46 70 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 10 VGS = 5 thru 2 V 8 ID - Drain Current (A) ID - Drain Current (A) 8 6 1.5 V 4 2 6 4 TC = 125 °C 2 25 °C - 55 °C 0 0 www.vishay.com 2 2 4 6 8 10 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics For technical questions, contact: [email protected] 1.75 2.00 Document Number: 71814 S13-1847-Rev. F, 19-Aug-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8405DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2000 0.14 0.12 C - Capacitance (pF) 1600 0.10 VGS = 1.8 V 0.08 VGS = 2.5 V R DS(on) - 0.06 Ciss 1200 800 0.04 Coss VGS = 4.5 V Crss 400 0.02 0.00 0 0 2 4 6 0 8 2 ID - Drain Current (A) 4 8 10 12 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 RDS(on) - On-Resistance (Normalized) 6 VGS - Gate-to-Source Voltage (V) 6 VDS = 6 V ID = 1 A 5 4 3 2 1 0 0 4 8 12 16 VGS = 4.5 V ID = 1 A 1.4 1.2 1.0 0.8 0.6 - 50 20 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.30 10 ID = 1 A 0.18 TJ = 150 °C 1 RDS(on) - I S - Source Current (A) 0.24 TJ = 25 °C 0.1 0.0 0.12 0.06 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71814 S13-1847-Rev. F, 19-Aug-13 1.2 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8405DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.4 80 ID = 250 µA 0.3 Power (W) V GS(th) Variance (V) 60 0.2 0.1 40 0.0 20 - 0.1 - 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 72 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 71814 S13-1847-Rev. F, 19-Aug-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8405DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4-BUMP (0.8 mm PITCH) 4 0.30 0.31 Note 3 0.40 Solder Mask e A2 Silicon A A1 Bump Note 2 b Diamerter e S Recommended Land E e 8401 XXX e S D Mark on Backside of Die Notes (unless otherwise specified): 1. Laser mark on the silicon die back, coated with a thin metal. 2. Bumps are 95.5/3.8/0.7 Sn/Ag/Cu. 3. Non-solder mask defined copper landing pad. 4. The flat side of wafers is oriented at the bottom. Dim. Millimetersa Inches Min. Max. Min. Max. A 0.600 0.650 0.0236 0.0256 A1 0.260 0.290 0.0102 0.0114 A2 0.340 0.360 0.0134 0.0142 b 0.370 0.410 0.0146 0.0161 D 1.520 1.600 0.0598 0.0630 E 1.520 1.600 0.0598 e S 0.800 0.360 0.0630 0.0315 0.400 0.0142 0.0157 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71814. Document Number: 71814 S13-1847-Rev. F, 19-Aug-13 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000