FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET 20 V, 9.7 A, 16.5 mΩ Features General Description Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A This device is designed specifically as a single package solution Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A for Li-Ion battery pack protection circuit and other ultra-portable Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A applications. Max rS1S2(on) = 24 mΩ at VGS = 2.5 V, ID = 6.7 A Fairchild’s advanced PowerTrench® process with state of the art It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm MicroFET Leadframe, the FDMB2307NZ minimizes both PCB space and rS1S2(on). HBM ESD protection level > 2 kV (Note 3) Application RoHS Compliant Li-Ion Battery Pack Pin 1 S1 Pin 1 S1 G1 G2 4 3 G1 S2 5 2 S1 S2 6 1 S1 D1/D2 S2 Top S2 G2 Bottom MLP 2x3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VS1S2 Source1 to Source2 Voltage VGS Gate to Source Voltage IS1S2 PD TJ, TSTG Parameter Source1 to Source2 Current -Continuous TA = 25°C Ratings 20 Units V (Note 4) ±12 V (Note 1a) 9.7 -Pulsed 40 Power Dissipation TA = 25 °C (Note 1a) 2.2 Power Dissipation TA = 25 °C (Note 1b) 0.8 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient(Dual Operation) (Note 1a) 57 RθJA Thermal Resistance, Junction to Ambient(Dual Operation) (Note 1b) 161 °C/W Package Marking and Ordering Information Device Marking 307 Device FDMB2307NZ ©2013 Fairchild Semiconductor Corporation FDMB2307NZ Rev.C7 Package MLP 2x3 1 Reel Size 7’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET April 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics IS1S2 Zero Gate Voltage Source1 to Source2 Current VS1S2 = 16 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = 12 V, VS1S2 = 0 V 10 μA V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VS1S2, IS1S2 = 250 μA 0.6 1 1.5 VGS = 4.5 V, IS1S2 = 8 A 10.5 13.5 16.5 VGS = 4.2 V, IS1S2 = 7.4 A rS1S2(on) gFS Static Source1 to Source2 On Resistance Forward Transconductance 11 14 18 11.5 16 21 VGS = 2.5 V, IS1S2 = 6.7 A 12 18 24 VGS = 4.5 V, IS1S2 = 8 A, TJ = 125 °C 11 20 29 VGS = 3.1 V, IS1S2 = 7 A VS1S2 = 5 V, IS1S2 = 8 A 41 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VS1S2 = 10 V, VGS = 0 V, f = 1 MHz (Note 5) 0.1 1760 2640 pF 229 345 pF 211 320 pF 2.6 8 Ω 12 22 ns 19 34 ns 32 51 ns 9.5 17 ns 20 28 nC 18 25 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate1 to Source1 Charge Qgd Gate1 to Source2 “Miller” Charge VS1S2 = 10 V, IS1S2 = 8 A, VGS = 4.5 V, RGEN = 6 Ω VG1S1 = 0 V to 5 V VG1S1 = 0 V to 4.5 V VS1S2 = 10V, IS1S2 = 8 A, VG2S2 = 0 V nC 2.8 nC 5.3 nC Source1- Source2 Diode Characteristics Ifss Maximum Continuous Source1-Source2 Diode Forward Current Vfss V = 0 V, VG2S2= 4.5 V, Source1 to Source2 Diode Forward Voltage G1S 1 Ifss= 8 A (Note 2) 0.8 8 A 1.2 V NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 57 °C/W when mounted on a 1 in2 pad of 2 oz copper b. 161 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. 5. Rg is measured on 100% of the die at wafer level. ©2013 Fairchild Semiconductor Corporation FDMB2307NZ Rev.C7 2 www.fairchildsemi.com FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) 40 VG1S1 = 4.5 V VG1S1 = 4.2 V 30 VG1S1 = 3.1 V VG1S1 = 2.5 V 20 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VG2S2 = 4.5 V 0 0.0 0.2 0.4 0.6 VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) 0.8 40 VGS = 4.5 V VGS = 4.2 V 30 VGS = 3.1 V VGS = 2.5 V 20 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 1.5 VG1S1 = 3.1 V 1.0 VG1S1 = 4.2 V VG1S1 = 4.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VG2S2 = 4.5 V 0.5 0 10 20 30 0.8 VGS = 2.5 V VGS = 3.1 V VGS = 4.2 V 1.0 VGS = 4.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0.5 40 0 10 20 30 40 IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) Figure 4. Normalized On-Resistance vs Source1 to Source2 Current and Gate Voltage Figure 3. Normalized On-Resistance vs Source1 to Source2 Current and Gate Voltage 80 1.6 IS1S2 = 8 A VGS = 4.5 V rS1S2(on), SOURCE1 TO 1.4 1.2 1.0 0.8 -25 0 25 50 75 100 125 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 IS1S2 = 8 A 40 TJ = 150 oC 20 TJ = 25 oC 0 1.0 150 TJ, JUNCTION TEMPERATURE (oC) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. On Resistance vs Gate to Source Voltage Figure 5. Normalized On Resistance vs Junction Temperature ©2013 Fairchild Semiconductor Corporation FDMB2307NZ Rev.C7 SOURCE2 ON-RESISTANCE (mΩ) NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE 0.6 1.5 IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) 0.6 -50 0.4 Figure 2. On-Region Characteristics NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE Figure 1. On-Region Characteristics VG1S1 = 2.5 V 0.2 VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) 3 www.fairchildsemi.com FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted Ifss, SOURCE1 TO SOURCE2 FORWARD CURRENT (A) IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) 40 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 30 VS1S2 = 5 V TJ = 150 oC 20 TJ = 25 oC 10 TJ = -55 oC 0 0.5 1.0 1.5 2.0 100 VG1S1 = 0 V, VG2S2 = 4.5 V 10 TJ = 150 oC 1 0.1 0.01 0.001 0.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 Figure 8. Source1 to Source2 Diode Forward Voltage vs Source Current 10000 5 VG2S2 = 0 V IS1S2 = 8 A f = 1 MHz VGS = 0 V 4 CAPACITANCE (pF) VG1S1, GATE1 TO SOURCE1 VOLTAGE (V) TJ = -55 oC Vfss, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics VS1S2 = 8 V 3 VS1S2 = 10 V 2 VS1S2 = 12 V Ciss 1000 Coss 1 Crss 0 0 5 10 15 20 100 0.1 25 Qg, GATE CHARGE (nC) IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) -1 VS1S2 = 0 V 10 -3 10 -4 10 TJ = 125oC -5 10 -6 10 -7 10 -8 10 TJ = 25 oC -9 10 -10 10 0 4 8 12 16 20 100 10 1 ms 10 ms 1 0.1 THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s DC RθJA = 161 oC/W TA = 25 oC 0.01 0.01 0.1 1 10 100 VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 11. Gate Leakage Current vs Gate to Source Voltage ©2013 Fairchild Semiconductor Corporation FDMB2307NZ Rev.C7 10 Figure 10. Capacitance vs Source1 to Source2 Voltage 10 -2 1 VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) Figure 9. Gate Charge Characteristics Ig, GATE LEAKAGE CURRENT (A) TJ = 25 oC Figure 12. Forward Bias Safe Operating Area 4 www.fairchildsemi.com FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1000 P(PK), PEAK TRANSIENT POWER (W) SINGLE PULSE o RθJA = 161 C/W o TA = 25 C 100 10 1 0.5 -3 10 -2 -1 10 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 161 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2013 Fairchild Semiconductor Corporation FDMB2307NZ Rev.C7 5 www.fairchildsemi.com FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEA-C06. ©2013 Fairchild Semiconductor Corporation FDMB2307NZ Rev.C7 6 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 ©2013 Fairchild Semiconductor Corporation FDMB2307NZ Rev.C7 7 www.fairchildsemi.com FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ F-PFS™ ®* ® AX-CAP®* FRFET® ® SM Global Power Resource PowerTrench BitSiC™ TinyBoost® GreenBridge™ PowerXS™ Build it Now™ TinyBuck® Programmable Active Droop™ Green FPS™ CorePLUS™ TinyCalc™ ® QFET Green FPS™ e-Series™ CorePOWER™ TinyLogic® QS™ Gmax™ CROSSVOLT™ TINYOPTO™ Quiet Series™ GTO™ CTL™ TinyPower™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPWM™ ISOPLANAR™ DEUXPEED® ™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder TranSiC™ Saving our world, 1mW/W/kW at a time™ EcoSPARK® and Better™ TriFault Detect™ EfficentMax™ SignalWise™ MegaBuck™ TRUECURRENT®* ESBC™ SmartMax™ MICROCOUPLER™ μSerDes™ SMART START™ MicroFET™ ® Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® UHC® STEALTH™ MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperFET® MotionMax™ FACT Quiet Series™ SuperSOT™-3 UniFET™ mWSaver® FACT® OptoHiT™ SuperSOT™-6 VCX™ FAST® ® OPTOLOGIC SuperSOT™-8 VisualMax™ FastvCore™ ® ® SupreMOS VoltagePlus™ OPTOPLANAR FETBench™ XS™ SyncFET™ FPS™ Sync-Lock™ 仙童 ™