VISHAY SI3495DV

New Product
Si3495DV
Vishay Siliconix
P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
- 20
ID (A)
0.024 at VGS = - 4.5 V
-7
0.030 at VGS = - 2.5 V
- 6.2
0.038 at VGS = - 1.8 V
- 5.2
0.048 at VGS = - 1.5 V
- 5.0
• TrenchFET® Power MOSFET: 1.5 V Rated
• Ultra-Low On-Resistance
• 100 % Rg Tested
COMPLIANT
APPLICATIONS
• Load Switch and PA Switch for Portable
Devices
TSOP-6
Top V iew
3 mm
1
6
2
5
3
4
RoHS
(4) S
(3) G
2.85 mm
(1, 2, 5, 6) D
Ordering Information: Si3495DV-T1-E3 (Lead (Pb)-free)
Marking Code:
95xxx
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±5
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
ID
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
Maximum Power Dissipationa
TA = 85 °C
PD
-7
- 5.3
- 3.9
- 20
- 1.7
- 0.9
2.0
1.1
1.0
0.6
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 3.6
IDM
Pulsed Drain Current
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Symbol
a
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
45
62.5
90
110
25
30
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 73135
S-71321-Rev. B, 02-Jul-07
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1
New Product
Si3495DV
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
- 0.35
Max
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
a
Forward Transconductance
Diode Forward
Voltagea
- 0.75
V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
- 10
VDS = - 5 V, VGS = - 4.5 V
rDS(on)
µA
- 20
A
VGS = - 4.5 V, ID = - 7 A
0.020
0.024
VGS = - 2.5 V, ID = - 6.2 A
0.024
0.030
VGS = - 1.8 V, ID = - 5.2 A
0.030
0.038
0.048
VGS = - 1.5 V, ID = - 3 A
0.036
gfs
VDS = - 5 V, ID = - 7 A
25
VSD
IS = - 1.7 A, VGS = 0 V
- 0.62
- 1.1
25
38
VDS = - 10 V, VGS = - 4.5 V, ID = - 7 A
2.5
Ω
S
V
b
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
7
4
td(on)
Turn-On Delay Time
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
IF = - 1.7 A, di/dt = 100 A/µs
8.5
13
19
30
36
55
200
300
106
160
35
60
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
VGS = 5 thru 2 V
16
I D - Drain Current (A)
I D - Drain Current (A)
16
1.5 V
12
8
4
12
8
TC = 125 °C
4
25 °C
1V
- 55 °C
0
0
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2
1
2
3
4
5
0
0.0
0.4
0.8
1.2
1.6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
Document Number: 73135
S-71321-Rev. B, 02-Jul-07
New Product
Si3495DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
3500
3000
0.08
C - Capacitance (pF)
r DS(on) - On-Resistance (Ω)
0.10
0.06
VGS = 1.8 V
VGS = 1.5 V
0.04
2500
Ciss
2000
1500
VGS = 2.5 V
1000
VGS = 4.5 V
500
Coss
0.02
Crss
0
0.00
0
4
8
12
16
0
20
4
8
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
6
1.8
VGS = 4.5 V
ID = 7 A
VDS = 10 V
ID = 7 A
5
1.4
rDS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
12
4
3
2
1.2
1.0
0.8
1
0.6
- 50
0
0
4
8
12
16
20
24
28
32
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
0.10
20
TJ = 150 °C
r DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 25 °C
1
0.1
0.0
0.08
ID = 7 A
0.06
0.04
0.02
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 73135
S-71321-Rev. B, 02-Jul-07
1.2
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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New Product
Si3495DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.4
32
ID = 250 µA
0.2
Power (W)
V GS(th) Variance (V)
0.3
0.1
24
TA = 25 °C
16
0.0
8
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
0
10- 2
150
10- 1
1
10
100
600
Time (sec)
TJ - Temperature (°C)
Single Pulse Power
Threshold Voltage
100
*rDS(on) Limited
IDM Limited
I D - Drain Current (A)
10
P(t) = 0.001
1
ID(on)
Limited
P(t) = 0.01
P(t) = 0.1
0.1
P(t) = 1
P(t) = 10
TC = 25 °C
Single Pulse
dc
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
*VGS > minimum V GS at which rDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 360 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-3
10-1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73135
S-71321-Rev. B, 02-Jul-07
New Product
Si3495DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10 -1
Square Wave Pulse Duration (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73135.
Document Number: 73135
S-71321-Rev. B, 02-Jul-07
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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