Si8901DB New Product Vishay Siliconix Bi-Directional P-Channel 20-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.65 mm) and On-Resistance Per Footprint Area PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 APPLICATIONS D Smart Batteries for Portable Devices S1 MICRO FOOT Bump Side View Backside View G1 S2 5 4 S2 Pin 1 Identifier 6 3 8901 xxx G2 G1 G2 Device Marking: 8901 = P/N Code xxx = Date/Lot Traceability Code S2 S1 1 2 Ordering Information: Si8901DB-T2—E3 S1 P-Channel ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Source1—Source2 Voltage Gate-Source Voltage Continuous Source1—Source2 Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Source1—Source2 Current TA = 85_C Operating Junction and Storage Temperature Range Package Reflow Conditionsc Steady State VS1S2 −20 VGS "8 IS1S2 PD Unit V −4.4 −3.5 −3.2 −2.5 ISM TA = 25_C Maximum Power Dissipationa 5 secs A −30 1.7 1 0.8 0.5 TJ, Tstg W −55 to 150 VPR 215 IR/Convection 220 _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Footb Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 60 75 95 120 18 22 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. The Foot is defined as the top surface of the package. c. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering. Document Number: 73126 S-41820—Rev. A, 11-Oct-04 www.vishay.com 1 Si8901DB New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VSS = VGS, ID = −350 mA −0.45 Gate-Body Leakage IGSS Zero Gate Voltage Source Current IS1S2 On-State Source Currenta IS(on) Typ Max Unit −1.0 V VSS = 0 V, VGS = "8 V "100 nA VSS = −20 V, VGS = 0 V −1 VSS = −20 V, VGS = 0 V, TJ = 85_C −5 Static Gate Threshold Voltage Source1—Source2 Source1 Source2 On On-State State Forward Transconductancea Resistancea VSS = −5 V, VGS = −4.5 V −5 mA A VGS = −4.5 V, ISS = −1 A 0.048 0.060 VGS = −2.5 V, ISS = −1 A 0.062 0.080 VGS = −1.8 V, ISS = −1 A 0.081 0.105 VSS = −10 V, ISS = −1 A 7 S Rg 9.5 W td(on) 13 tr 27 40 120 180 65 100 rS1S2(on) gfs W Dynamicb Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(off) tf VSS = −10 V, RL = 10 W ISS ^ −1 A, VGEN = −4.5 V, Rg = 6 W 20 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73126 S-41820—Rev. A, 11-Oct-04 Si8901DB New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 10 10 VGS = 5 thru 2 V 8 6 I D − Drain Current (A) I D − Drain Current (A) 8 1.5 V 4 2 6 4 TC = 125_C 2 25_C −55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.4 VDS − Drain-to-Source Voltage (V) 2.0 On-Resistance vs. Junction Temperature 1.4 0.10 rDS(on) − On-Resiistance (Normalized) r DS(on) − On-Resistance ( W ) 1.6 1.6 0.12 VGS = 1.8 V 0.08 VGS = 2.5 V 0.06 VGS = 4.5 V 0.04 VGS = 4.5 V IS1S2 = 1 A 1.2 1.0 0.8 0.02 0.00 0 2 4 6 8 0.6 −50 10 −25 On-Resistance vs. Gate-to-Source Voltage 0.20 0 25 50 75 100 125 150 125 150 TJ − Junction Temperature (_C) ID − Drain Current (A) Threshold Voltage 0.4 IS1S2 = 5 A 0.3 0.16 IS1S2 = 350 mA IS1S2 = 1 A V GS(th) Variance (V) r DS(on) − On-Resistance ( W ) 1.2 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.14 0.8 0.12 0.08 0.04 0.2 0.1 0.0 −0.1 0.00 0 1 2 3 VGS − Gate-to-Source Voltage (V) Document Number: 73126 S-41820—Rev. A, 11-Oct-04 4 5 −0.2 −50 −25 0 25 50 75 100 TJ − Temperature (_C) www.vishay.com 3 Si8901DB New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power, Junction-to-Ambient Safe Operating Area 100 30 *Limited by rDS(on) 25 I D − Drain Current (A) Power (W) 20 15 10 10 ms 1 100 ms 1s 0.1 10 s TC = 25_C Single Pulse dc, 100 s 0.001 0 0.01 0.1 1 100 10 1000 0.1 Time (sec) 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 ms 0.01 5 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 95_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 10 ms, 100 ms 10 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 www.vishay.com 4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Document Number: 73126 S-41820—Rev. A, 11-Oct-04 Si8901DB New Product Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 6-BUMP (2 X 3, 0.8-mm PITCH) 6 0.30 X 0.31 Note 3 Solder Mask −0.4 Note 2 A2 A A1 e b Diameter Bump Note 1 e e Recommended Land 8901 xxx e D s Mark on Backside of Die s e e E NOTES (Unless Otherwise Specified): 1. 6 solder bumps are Eutetic 63Sn/37Pb with diameter 0.37 − 0.41 mm 2. Backside surface is coated with a Ag/Ni/Ti layer 3. Non-solder mask defined copper landing pad. 4. Laser marks on the silicon die back MILLIMETERS* INCHES Dim Min Max Min Max A 0.600 0.650 0.0236 0.0256 A1 0.260 0.290 0.102 0.114 A2 0.340 0.360 0.0134 0.0142 b 0.370 0.410 0.0146 0.0161 D 1.52 1.6 0.0598 0.0630 E 2.32 2.4 0.0913 0.0945 e 0.750 0.850 0.0295 0.0335 s 0.380 0.400 0.0150 0.0157 * Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73126. Document Number: 73126 S-41820—Rev. A, 11-Oct-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1