Si8901DB Datasheet

Si8901DB
New Product
Vishay Siliconix
Bi-Directional P-Channel 20-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
D Ultra-Low rSS(on)
D New MICRO FOOTr Chipscale Packaging Reduces
Footprint Area, Profile (0.65 mm) and On-Resistance
Per Footprint Area
PRODUCT SUMMARY
VS1S2 (V)
rS1S2(on) (W)
IS1S2 (A)
0.060 @ VGS = −4.5 V
−4.4
−20
0.080 @ VGS = −2.5 V
−3.9
0.105 @ VGS = −1.8 V
−3.4
APPLICATIONS
D Smart Batteries for Portable Devices
S1
MICRO FOOT
Bump Side View
Backside View
G1
S2
5 4
S2
Pin 1 Identifier
6 3
8901
xxx
G2
G1
G2
Device Marking:
8901 = P/N Code
xxx = Date/Lot Traceability Code
S2
S1
1
2
Ordering Information: Si8901DB-T2—E3
S1
P-Channel
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Source1—Source2 Voltage
Gate-Source Voltage
Continuous Source1—Source2 Current (TJ = 150_C)a
TA = 25_C
TA = 85_C
Pulsed Source1—Source2 Current
TA = 85_C
Operating Junction and Storage Temperature Range
Package Reflow Conditionsc
Steady State
VS1S2
−20
VGS
"8
IS1S2
PD
Unit
V
−4.4
−3.5
−3.2
−2.5
ISM
TA = 25_C
Maximum Power Dissipationa
5 secs
A
−30
1.7
1
0.8
0.5
TJ, Tstg
W
−55 to 150
VPR
215
IR/Convection
220
_C
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum
Junction-to-Footb
Symbol
t v 5 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
60
75
95
120
18
22
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. The Foot is defined as the top surface of the package.
c. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
Document Number: 73126
S-41820—Rev. A, 11-Oct-04
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Si8901DB
New Product
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VSS = VGS, ID = −350 mA
−0.45
Gate-Body Leakage
IGSS
Zero Gate Voltage Source Current
IS1S2
On-State Source Currenta
IS(on)
Typ
Max
Unit
−1.0
V
VSS = 0 V, VGS = "8 V
"100
nA
VSS = −20 V, VGS = 0 V
−1
VSS = −20 V, VGS = 0 V, TJ = 85_C
−5
Static
Gate Threshold Voltage
Source1—Source2
Source1
Source2 On
On-State
State
Forward Transconductancea
Resistancea
VSS = −5 V, VGS = −4.5 V
−5
mA
A
VGS = −4.5 V, ISS = −1 A
0.048
0.060
VGS = −2.5 V, ISS = −1 A
0.062
0.080
VGS = −1.8 V, ISS = −1 A
0.081
0.105
VSS = −10 V, ISS = −1 A
7
S
Rg
9.5
W
td(on)
13
tr
27
40
120
180
65
100
rS1S2(on)
gfs
W
Dynamicb
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
tf
VSS = −10 V, RL = 10 W
ISS ^ −1 A, VGEN = −4.5 V, Rg = 6 W
20
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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Document Number: 73126
S-41820—Rev. A, 11-Oct-04
Si8901DB
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
10
10
VGS = 5 thru 2 V
8
6
I D − Drain Current (A)
I D − Drain Current (A)
8
1.5 V
4
2
6
4
TC = 125_C
2
25_C
−55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.4
VDS − Drain-to-Source Voltage (V)
2.0
On-Resistance vs. Junction Temperature
1.4
0.10
rDS(on) − On-Resiistance
(Normalized)
r DS(on) − On-Resistance ( W )
1.6
1.6
0.12
VGS = 1.8 V
0.08
VGS = 2.5 V
0.06
VGS = 4.5 V
0.04
VGS = 4.5 V
IS1S2 = 1 A
1.2
1.0
0.8
0.02
0.00
0
2
4
6
8
0.6
−50
10
−25
On-Resistance vs. Gate-to-Source Voltage
0.20
0
25
50
75
100
125
150
125
150
TJ − Junction Temperature (_C)
ID − Drain Current (A)
Threshold Voltage
0.4
IS1S2 = 5 A
0.3
0.16
IS1S2 = 350 mA
IS1S2 = 1 A
V GS(th) Variance (V)
r DS(on) − On-Resistance ( W )
1.2
VGS − Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.14
0.8
0.12
0.08
0.04
0.2
0.1
0.0
−0.1
0.00
0
1
2
3
VGS − Gate-to-Source Voltage (V)
Document Number: 73126
S-41820—Rev. A, 11-Oct-04
4
5
−0.2
−50
−25
0
25
50
75
100
TJ − Temperature (_C)
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Si8901DB
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Single Pulse Power, Junction-to-Ambient
Safe Operating Area
100
30
*Limited
by rDS(on)
25
I D − Drain Current (A)
Power (W)
20
15
10
10 ms
1
100 ms
1s
0.1
10 s
TC = 25_C
Single Pulse
dc, 100 s
0.001
0
0.01
0.1
1
100
10
1000
0.1
Time (sec)
1
10
100
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1 ms
0.01
5
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 95_C/W
0.02
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
10 ms, 100 ms
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
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10−3
10−2
Square Wave Pulse Duration (sec)
10−1
1
Document Number: 73126
S-41820—Rev. A, 11-Oct-04
Si8901DB
New Product
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT: 6-BUMP (2 X 3, 0.8-mm PITCH)
6
0.30 X 0.31
Note 3
Solder Mask −0.4
Note 2
A2
A
A1
e
b Diameter
Bump Note 1
e
e
Recommended Land
8901
xxx
e
D
s
Mark on Backside of Die
s
e
e
E
NOTES (Unless Otherwise Specified):
1.
6 solder bumps are Eutetic 63Sn/37Pb with diameter 0.37 − 0.41 mm
2.
Backside surface is coated with a Ag/Ni/Ti layer
3.
Non-solder mask defined copper landing pad.
4.
Laser marks on the silicon die back
MILLIMETERS*
INCHES
Dim
Min
Max
Min
Max
A
0.600
0.650
0.0236
0.0256
A1
0.260
0.290
0.102
0.114
A2
0.340
0.360
0.0134
0.0142
b
0.370
0.410
0.0146
0.0161
D
1.52
1.6
0.0598
0.0630
E
2.32
2.4
0.0913
0.0945
e
0.750
0.850
0.0295
0.0335
s
0.380
0.400
0.0150
0.0157
* Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73126.
Document Number: 73126
S-41820—Rev. A, 11-Oct-04
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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