Si8451DB Vishay Siliconix P-Channel 1.5-V Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.8 0.100 at VGS = - 2.5 V - 9.7 0.126 at VGS = - 1.8 V - 3.0 0.200 at VGS = - 1.5 V - 1.2 Qg (Typ.) • TrenchFET® Power MOSFET RoHS APPLICATIONS 7.7 nC COMPLIANT • Portable Devices - Battery Management - Low Threshold Load Switch - Battery Protection MICRO FOOT Bump Side View S Backside View G 2 6 XXX S 3 S 8451 S 1 G D D 4 5 Device Marking: 8451 xxx = Date/Lot Traceability Code D Ordering Information: Si8451DB-T2-E1 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Continuous Source-Drain Diode Current Maximum Power Dissipation TA = 25 °C IS - 5.0a, b - 15 - 2.3a, b 13 TC = 70 °C 8.4 TA = 25 °C PD IR/Convection 2.77a, b W 1.77a, b TJ, Tstg Operating Junction and Storage Temperature Range A - 10.8 TC = 25 °C TA = 70 °C Package Reflow Conditionsc - 8.7 - 4.0a, b IDM TC = 25 °C V - 10.8 TA = 70 °C Pulsed Drain Current Unit - 55 to 150 260 °C Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TC = 25 °C. Document Number: 69845 S-82119-Rev. B, 08-Sep-08 www.vishay.com 1 Si8451DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Steady State Symbol Typical RthJA Maximum 37 45 RthJF 7 9.5 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. Maximum under Steady State conditions is 85 °C/W. c. Case is defined as top surface of the package. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea a Forward Transconductance RDS(on) gfs V - 20 mV/°C 3 - 0.4 - 1.0 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 70 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V -5 µA A VGS = - 4.5 V, ID = - 1 A 0.065 0.080 VGS = - 2.5 V, ID = - 1 A 0.080 0.100 VGS = - 1.8 V, ID = - 1 A 0.101 0.126 VGS = - 1.5 V, ID = - 1 A 0.138 0.200 VDS = - 10 V, ID = - 1 A 8 VDS = - 10 V, VGS = 0 V, f = 1 MHz 160 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 Rg 750 VDS = - 10 V, VGS = - 8 V, ID = - 1 A VDS = - 10 V, VGS = - 4.5 V, ID = 1 A td(off) 16 24 10 15 1.3 VGS = - 0.1 V, f = 1 MHz VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 8 20 30 30 45 45 70 tf 30 45 td(on) 5 10 12 20 45 70 30 45 tr td(off) tf nC 2.7 td(on) tr pF 100 VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 8 V, Rg = 1 Ω ns Document Number: 69845 S-82119-Rev. B, 08-Sep-08 Si8451DB Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions IS TC = 25 °C Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 10.8 - 15 IS = - 1 A, VGS = 0 V IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 25 40 ns 13 20 nC 9 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 69845 S-82119-Rev. B, 08-Sep-08 www.vishay.com 3 Si8451DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 5 VGS = 5 thru 2.5 V 4 VGS = 2 V I D - Drain Current (A) I D - Drain Current (A) 12 9 6 VGS = 1.5 V 3 3 2 TC = 25 °C 1 TC = 125 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.25 1500 1200 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) VGS = 1.8 V VGS = 1.5 V 0.20 0.15 VGS = 2.5 V 0.10 900 Ciss 600 0.05 300 Coss VGS = 4.5 V Crss 0.00 0 0 3 6 9 12 15 0 4 ID - Drain Current (A) 8 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8 1.4 ID = 1 A ID = 1 A VDS = 10 V 1.3 VDS = 16 V 4 2 VGS = 4.5 V, 2.5 V 1.2 (Normalized) 6 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12 1.1 VGS = 1.5 V VGS = 1.8 V 1.0 0.9 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 15 18 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 69845 S-82119-Rev. B, 08-Sep-08 Si8451DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.21 100 TJ = 25 °C TJ = 150 °C 1 0.1 0.0 VGS(th) (V) RDS(on) - On-Resistance (Ω) 10 0.17 0.13 TA = 125 °C 0.09 TA = 25 °C 0.05 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.9 30 0.8 25 0.7 20 Power (W) I S - Source Current (A) ID = 1 A 0.6 5 15 0.5 10 ID = 250 µA 0.4 0.3 - 50 5 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 100 Limited by R DS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms 1 s, 10 s DC 0.1 BVDSS Limited TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 69845 S-82119-Rev. B, 08-Sep-08 www.vishay.com 5 Si8451DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 12 12 Power Dissipation (W) I D - Drain Current (A) 10 8 6 4 9 6 3 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 69845 S-82119-Rev. B, 08-Sep-08 Si8451DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65 °C/W 0.02 Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 69845 S-82119-Rev. B, 08-Sep-08 www.vishay.com 7 Si8451DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 6-BUMP (2 x 3, 0.5 mm PITCH) 6 x Ø 0.24 to 0.26 Note 3 Solder Mask ~ Ø 0.25 A1 e A2 1 A C B A 2 Bump Note 2 e e Recommended Land S S D S G e 8451 Mark on Backside of Die s XXX D D s 6xØb s e e s E Notes (Unless otherwise specified): 1. All dimensions are in millimeters. 2. Six (6) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter ∅ 0.30 to 0.32 mm. 3. Backside surface is coated with a Ti/Ni/Ag layer. 4. Non-solder mask defined copper landing pad. 5. is location of Pin 1. · Dim. Millimetersa Inches Min. Nom. Max. Min. Nom. Max. A 0.510 0.575 0.590 0.0201 0.0224 0.0232 A1 0.220 0.250 0.280 0.0087 0.0098 0.0110 A2 0.290 0.300 0.310 0.0114 0.0118 0.0122 b 0.300 0.310 0.320 0.0118 0.0122 0.0126 e 0.500 0.0197 s 0.230 0.250 0.270 0.0090 0.0098 0.0106 D 0.920 0.960 1.000 0.0362 0.0378 0.0394 E 1.420 1.460 1.500 0.0559 0.0575 0.0591 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69845. www.vishay.com 8 Document Number: 69845 S-82119-Rev. B, 08-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1