FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET 20 V, 10 A, 13 mΩ Features General Description Max rS1S2(on) = 13 mΩ at VGS = 4.5 V, IS1S2 = 1 A This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process with state of the art “low pitch” WLCSP packaging process, the FDZ1323NZ minimizes both PCB space and rS1S2(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge and low rS1S2(on). Max rS1S2(on) = 13 mΩ at VGS = 3.8 V, IS1S2 = 1 A Max rS1S2(on) = 16 mΩ at VGS = 3.1 V, IS1S2 = 1 A Max rS1S2(on) = 18 mΩ at VGS = 2.5 V, IS1S2 = 1 A Occupies only 3 mm2 of PCB area Ultra-thin package: less than 0.35 mm height when mounted to PCB High power and current handling capability HBM ESD protection level > 3.6 kV (Note 3) Applications RoHS Compliant Battery management Load switch Battery protection S1 PIN1 PIN1 G1 S1 G1 S1 S2 G2 S2 G2 BOTTOM TOP WL-CSP 1.3X2.3 S2 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VS1S2 Source1 to Source2 Voltage VGS Gate to Source Voltage IS1S2 PD TJ, TSTG Parameter Source1 to Source2 Current -Continuous TA = 25°C (Note 1a) -Pulsed Ratings 20 Units V ±12 V 10 40 Power Dissipation TA = 25°C (Note 1a) 2 Power Dissipation TA = 25°C (Note 1b) 0.5 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 62 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 257 °C/W Package Marking and Ordering Information Device Marking EC Device FDZ1323NZ ©2013 Fairchild Semiconductor Corporation FDZ1323NZ Rev.C7 Package WL-CSP 1.3X2.3 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units www.fairchildsemi.com FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET September 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics IS1S2 Zero Gate Voltage Source1 to Source2 Current VS1S2 = 16 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±12 V, VS1S2 = 0 V ±10 μA V On Characteristics VGS(th) rS1S2(on) gFS Gate to Source Threshold Voltage VGS = VS1S2, IS1S2 = 250 μA 0.4 0.9 1.2 VGS = 4.5 V, IS1S2 = 1 A 4.5 9.7 13 VGS = 3.8 V, IS1S2 = 1 A 5.5 10 13 Static Source1 to Source2 On Resistance VGS = 3.1 V, IS1S2 = 1 A 7 11 16 VGS = 2.5 V, IS1S2 = 1 A 8 13 18 VGS = 4.5 V, IS1S2 = 1 A,TJ = 125 oC 13 20 VS1S2 = 5 V, IS1S2 = 1 A 9 Forward Transconductance mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VS1S2 = 10 V, VGS = 0 V, f = 1 MHz 1545 2055 pF 269 405 pF 252 380 pF 12 22 ns 13 23 ns 34 54 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 13 23 ns Qg Total Gate Charge 17 24 nC Qgs Gate to Source1 Gate Charge Qgd Gate to Source2 “Miller” Charge VS1S2 = 10 V, IS1S2 = 1 A, VGS = 4.5 V, RGEN = 6 Ω VS1S2 = 10 V, IS1S2 = 1 A, VG1S1 = 4.5 V, VG2S2 = 0 V 1.9 nC 5.4 nC Source1 to Source2 Diode Characteristics Ifss Maximum Continuous Source1 to Source2 Diode Forward Current Vfss Source1 to Source2 Diode Forward Voltage VG1S1 = 0 V, VG2S2 = 4.5 V, Ifss = 1 A (Note 2) 0.6 1 A 1.2 V Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 257 °C/W when mounted on a minimum pad of 2 oz copper. a. 62 °C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 us, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. ©2013 Fairchild Semiconductor Corporation FDZ1323NZ Rev.C7 2 www.fairchildsemi.com FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) 40 VG1S1 = 4.5 V VG1S1 = 3.8 V 30 VG1S1 = 3.1 V 20 VG1S1 = 2.5 V VG1S1 = 2 V 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VG2S2 = 4.5 V 0 0.0 0.2 0.4 0.6 40 VGS = 4.5 V 30 VGS = 3.1 V 20 VGS = 2 V 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) 0.4 0.6 0.8 1.0 Figure 2. On-Region Characteristics 2.0 2.0 NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE 0.2 VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) Figure 1. On-Region Characteristics PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VG2S2 = 4.5 V 1.5 VG1S1 = 2 V VG1S1 = 2.5 V 1.0 VG1S1 = 3.1 V VG1S1 = 3.8 V VG1S1 = 4.5 V 0.5 0 10 20 30 40 VGS = 2 V 1.5 VGS = 2.5 V VGS = 3.1 V 1.0 0.5 0 IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) 20 30 40 rS1S2(on), SOURCE1 TO 1.0 0.8 -50 -25 0 25 50 75 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 50 IS1S2 = 1 A 40 30 TJ = 125 oC 20 10 TJ = 25 oC 0 1.0 100 125 150 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 6. On Resistance vs Gate to Source Voltage Figure 5. Normalized On Resistance vs Junction Temperature ©2013 Fairchild Semiconductor Corporation FDZ1323NZ Rev.C7 SOURCE2 ON-RESISTANCE (mΩ) 60 IS1S2 = 1 A VGS = 4.5 V 1.2 0.6 -75 10 Figure 4. Normalized On-Resistance vs Source1 to Source2 Current and Gate Voltage 1.6 1.4 VGS = 4.5 V VGS = 3.8 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) Figure 3. Normalized On-Resistance vs Source1 to Source2 Current and Gate Voltage NORMALIZED SOURCE1 TO SOURCE2 ON-RESISTANCE VGS = 2.5 V VGS = 3.8 V 3 www.fairchildsemi.com FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 100 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX Ifss, SOURCE1 TO SOURCE2 FORWARD CURRENT (A) IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) 40 30 VS1S2 = 5 V TJ = 150 oC 20 TJ = 25 oC TJ = -55 oC 10 0 0.5 1.0 1.5 2.0 VG1S1 = 0 V, VG2S2 = 4.5 V TJ = 150 oC 10 TJ = 25 oC 1 TJ = -55 oC 0.1 0.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.6 0.8 1.0 1.2 Figure 8. Source1 to Source2 Diode Forward Voltage vs Source Current 5000 4.5 VG2S2 = 0 V IS1S2 = 1 A Ciss VS1S2 = 8 V CAPACITANCE (pF) VG1S1, GATE1 TO SOURCE1 VOLTAGE (V) 0.4 Vfss, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics 3.0 VS1S2 = 10 V 1.5 VS1S2 = 12 V 1000 Coss Crss f = 1 MHz VGS = 0 V 100 0.1 0.0 0 4 8 12 16 20 Qg, GATE CHARGE (nC) -1 IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) -2 VS1S2 = 0 V -3 10 -4 10 TJ = 125 oC -5 10 -6 10 -7 10 -8 10 TJ = 25 oC -9 10 -10 10 0 3 6 9 12 15 VGS, GATE TO SOURCE VOLTAGE (V) 20 50 10 1 ms 1 THIS AREA IS LIMITED BY rDS(on) 0.1 RθJA = 257 oC/W o TA = 25 C 0.01 0.01 10 ms SINGLE PULSE TJ = MAX RATED 0.1 100 ms 1s 10 s DC CURVE BENT TO MEASURED DATA 1 10 100 VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) Figure 11. Gate Leakage Current vs Gate to Source Voltage ©2013 Fairchild Semiconductor Corporation FDZ1323NZ Rev.C7 10 Figure 10. Capacitance vs Source1 to Source2 Voltage 10 10 1 VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) Figure 9. Gate Charge Characteristics Ig, GATE LEAKAGE CURRENT (A) 0.2 Figure 12. Forward Bias Safe Operating Area 4 www.fairchildsemi.com FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET Typical Characteristics TJ = 25°C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 100 10 SINGLE PULSE RθJA = 257 oC/W 1 TA = 25 oC 0.4 -3 10 -2 -1 10 0 10 1 10 100 10 1000 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 257 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2013 Fairchild Semiconductor Corporation FDZ1323NZ Rev.C7 5 www.fairchildsemi.com FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET Dimensional Outline and Pad Layout Pin Definations: Gate Source1 Source2 B1, B2 A1, C1 A2, C2 Product Specific Dimensions: D E X Y 2.3 mm 1.3 mm 0.315 mm 0.49 mm Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. 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