Si9945AEY Vishay Siliconix Dual N-Channel 60-V (D-S), 175C MOSFET VDS (V) 60 rDS(on) () ID (A) 0.080 @ VGS = 10 V 3.7 0.100 @ VGS = 4.5 V 3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175C)a TA = 25C TA = 70C 3.2 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa 2 2.4 PD TA = 70C Operating Junction and Storage Temperature Range A 25 IS TA = 25C V 3.7 ID Pulsed Drain Current Unit W 1.7 TJ, Tstg C –55 to 175 Parameter Symbol Typ t 10 sec Junction-to-Ambienta Max Unit 62.5 C/W RthJA Steady State 93 Notes a. Surface Mounted on 1” x 1” FR4 Board For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70758 S-57253—Rev. C, 24-Feb-98 www.vishay.com FaxBack 408-970-5600 2-1 Si9945AEY Vishay Siliconix Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS Typ Max Unit Static Gate Threshold Voltage On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea Diode Forward Voltagea V "100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55C 10 VDS w 5 V, VGS = 10 V 20 nA mA A VGS = 10 V, ID = 3.7 A 0.06 0.080 VGS = 4.5 V, ID = 3.4 A 0.075 0.100 gfs VDS = 15 V, ID = 3.7 A 11 VSD IS = 2.0 A, VGS = 0 V W S 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs 11 VDS = 30 V, V VGS = 10 V V, ID = 3.7 37 A 20 nC C 2 Gate-Drain Charge Qgd Turn-On Delay Time td(on) 9 20 tr 10 20 21 40 8 20 45 80 Rise Time Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 2 VDD = 30 V V,, RL = 30 W ID ^ 1 A, A VGEN = 10 V V, RG = 6 W IF = 2.0 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70758 S-57253—Rev. C, 24-Feb-98 Si9945AEY Vishay Siliconix Output Characteristics Transfer Characteristics 25 25 VGS = 10 through 5 V 20 TC = –55C 20 4V I D – Drain Current (A) I D – Drain Current (A) 25C 15 10 3V 5 0 150C 15 10 5 0 0 1 2 3 4 5 0 1 VDS – Drain-to-Source Voltage (V) 2 On-Resistance vs. Drain Current 4 5 6 50 60 Capacitance 0.20 800 0.16 600 C – Capacitance (pF) r DS(on) – On-Resistance ( ) 3 VGS – Gate-to-Source Voltage (V) 0.12 VGS = 4.5 V 0.08 VGS = 10 V 0.04 Ciss 400 200 Coss Crss 0 0 0 5 10 15 20 25 0 10 ID – Drain Current (A) Gate Charge 2.4 2.0 VDS = 30 V ID = 3.7 A 8 r DS(on) – On-Resistance ( ) (Normalized) V GS – Gate-to-Source Voltage (V) 10 6 4 2 0 0 2 4 6 Qg – Total Gate Charge (nC) Document Number: 70758 S-57253—Rev. C, 24-Feb-98 20 30 40 VDS – Drain-to-Source Voltage (V) 8 10 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.7 A 1.6 1.2 0.8 0.4 0 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si9945AEY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on) – On-Resistance ( W ) I S – Source Current (A) 30 10 TJ = 175C TJ = 25C 0.16 0.12 0.08 ID = 3.7 A 0.04 1 0 0 0.3 0.6 0.9 1.2 0 1.5 VSD – Source-to-Drain Voltage (V) 2 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.6 120 0.3 90 ID = 250 mA 0.0 Power (W) V GS(th) Variance (V) 4 –0.3 60 30 –0.6 –0.9 –50 –25 0 25 50 75 100 125 150 175 0 0.001 0.01 0.1 TJ – Temperature (C) 1 10 100 1000 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 93C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 10 10+2 10+3 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70758 S-57253—Rev. C, 24-Feb-98