Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • Ultra-Low On-Resistance • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Synchronous Rectifier in Low Power DC/DC Converters • POL • OR-ing D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4398DY-T1-E3 (Lead (Pb)-free) Si4398DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Avalanche Current Maximum Power Dissipationa IS L = 0.1 mH TA = 25 °C TA = 70 °C 19 20 13 2.9 1.3 40 IAS 80 mJ 3.5 1.6 2.2 1.0 TJ, Tstg Operating Junction and Storage Temperature Range A 70 EAS PD V 25 IDM Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Energy ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 29 35 67 80 13 16 Unit °C/W Notes: a. Surface mounted on 1” x 1” FR4 board. Document Number: 73018 S11-0209-Rev. C, 14-Feb-11 www.vishay.com 1 Si4398DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. 1.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Diode Forward Voltagea VDS ≥ 5 V, VGS = 10 V µA 50 A VGS = 10 V, ID = 25 A 0.0023 0.0028 VGS = 4.5 V, ID = 22 A 0.0033 0.0040 gfs VDS = 10 V, ID = 15 A 95 VSD IS = 2.9 A, VGS = 0 V 0.72 Ω S 1.1 V Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance 5620 VDS = 10 V, VGS = 0 V, f = 1 MHz 1340 34 VDS = 10 V, VGS = 4.5 V, ID = 20 A 0.7 VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 7.5 td(on) Rise Time 50 17.5 Rg Turn-On Delay Time pF 540 IF = 2.9 A, dI/dt = 100 A/µs 1.4 2.1 23 35 15 23 80 120 23 35 50 80 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 60 VGS = 10 V thru 4 V 50 ID - Drain Current (A) ID - Drain Current (A) 50 40 30 20 40 30 20 TC = 125 °C 10 10 25 °C - 55 °C 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 4.0 Document Number: 73018 S11-0209-Rev. C, 14-Feb-11 Si4398DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.006 6500 Ciss 5200 0.004 C - Capacitance (pF) RDS(on) - On-Resistance ( ) 0.005 VGS = 4.5 V 0.003 VGS = 10 V 0.002 2600 Coss 1300 0.001 0.000 Crss 0 0 10 20 30 40 50 60 0 4 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 20 1.6 VDS = 10 V ID = 20 A VGS = 10 V ID = 25 A 4 3 2 (Normalized) 1.4 R DS(on) - On-Resistance 5 1.2 1.0 0.8 1 0.6 - 50 0 0 5 10 15 20 25 30 35 40 45 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.010 R DS(on) - On-Resistance ( ) 60 IS - Source Current (A) 8 On-Resistance vs. Drain Current 6 VGS - Gate-to-Source Voltage (V) 3900 TJ = 150 °C 10 TJ = 25 °C 0.008 ID = 25 A 0.006 0.004 0.002 0.000 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 73018 S11-0209-Rev. C, 14-Feb-11 10 www.vishay.com 3 Si4398DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 0.50 ID = 250 µA 0.25 50 40 Power (W) VGS(th) (V) 0.00 - 0.25 30 - 0.50 20 - 0.75 10 - 1.00 - 50 - 25 0 25 50 75 100 125 0 10-2 150 10-1 1 10 100 600 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 100 Limited by R DS(on)* ID - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 0.01 0.01 TC = 25 °C Single Pulse DC 1 10 100 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 67 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73018 S11-0209-Rev. C, 14-Feb-11 Si4398DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73018. Document Number: 73018 S11-0209-Rev. C, 14-Feb-11 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000