SiE822DF Datasheet

SiE822DF
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
• Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size
• Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
• 100 % Rg and UIS Tested
• Compliant to RoHS directive 2002/95/EC
ID (A)a
RDS(on) (Ω)
Silicon
Limit
0.0034 at VGS = 10 V
138
50
0.0055 at VGS = 4.5 V
108
50
VDS (V)
20
Package
Qg (Typ.)
Limit
24 nC
Package Drawing
www.vishay.com/doc?73398
PolarPAK
10
D
9
G
8
S
7
S
6
D
6
7
8
9
10
APPLICATIONS
D
D
S
G
D
• VRM
• DC-DC Conversion
• Synchronous Rectification
D
G
D
1
G
2
S
3
S
4
D
5
5
4
3
2
1
S
Top View
Bottom View
Top surface is connected to pins 1, 5, 6, and 10
Ordering Information: SiE822DF-T1-E3 (Lead (Pb)-free)
SiE822DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
For Related Documents
www.vishay.com/ppg?74451
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
ID
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Limit
20
± 20
138 (Silicon Limit)
50a (Package Limit)
50a
31b, c
24.8b, c
80
50a
4.3b, c
30
45
104
66
5.2b, c
3.3b, c
- 55 to 150
260
Unit
V
A
mJ
TC = 25 °C
TC = 70 °C
PD
W
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
°C
Soldering Recommendations (Peak Temperature)d, e
Notes:
a. Package limited is 50 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 74451
S09-1338-Rev. B, 13-Jul-09
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SiE822DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t ≤ 10 s
a, b
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain Top)a
Steady State
Maximum Junction-to-Case (Source)a, c
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
Symbol
RthJA
RthJC (Drain)
RthJC (Source)
Typical
20
1
2.8
Maximum
24
1.2
3.4
Unit
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VGS = 0 V, ID = 250 µA
20
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Currenta
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 18.3 A
VGS = 4.5 V, ID = 14.5 A
VDS = 15 V, ID = 18.3 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 20 A
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 10 V, VGS = 4.5 V, ID = 20 A
IS
ISM
VSD
trr
Qrr
ta
tb
TC = 25 °C
Pulse Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
f = 1 MHz
VDD = 10 V, RL = 1 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 20 V, RL = 1 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
IS = 10 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
1.5
V
24.1
- 7.1
2.3
mV/°C
3.0
± 100
1
10
25
V
nA
µA
A
0.0028
0.0045
90
4200
1000
320
52
24
13
5
1.0
50
220
35
20
15
25
35
10
0.8
40
36
19
21
0.0034
0.0055
Ω
S
pF
78
36
1.5
75
330
55
30
25
40
55
15
50
80
1.2
60
60
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74451
S09-1338-Rev. B, 13-Jul-09
SiE822DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
20
VGS = 10 V thru 4 V
TC = 125 °C
16
I D - Drain Current (A)
I D - Drain Current (A)
60
40
20
12
TC = 25 °C
8
4
VGS = 3 V
0
0.0
0.4
0.8
1.2
1.6
TC = - 55 °C
0
1.5
2.0
2.0
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
4800
0.006
Ciss
3600
VGS = 4.5 V
0.005
C - Capacitance (pF)
R DS(on) - On-Resistance (m )
0.0055
0.0045
0.004
0.0035
2400
Coss
VGS = 10 V
0.003
1200
0.0025
Crss
0
0.002
0
20
40
60
0
80
5
15
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
10
ID = 20 A
ID = 18.3 A
8
1.4
VDS = 10 V
VDS = 16 V
6
4
VGS = 10 V, 4.5 V
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
10
1.2
1.0
0.8
2
0
0
10
20
30
40
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74451
S09-1338-Rev. B, 13-Jul-09
50
60
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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SiE822DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.008
R DS(on) - Drain-to-Source On-Resistance ( )
I S - Source Current (A)
100
TJ = 150 °C
TJ = 25 °C
10
ID = 18.3 A
0.007
0.006
0.005
TA = 125 °C
0.004
TA = 25 °C
0.003
0.002
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
3.0
50
2.8
40
2.6
ID = 250 µA
Power (W)
VGS(th) (V)
2.4
2.2
2.0
30
20
1.8
1.6
10
1.4
1.2
- 50
- 25
0
25
50
75
100
125
0
0.01
150
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
100
Limited by RDS(on)*
I D - Drain Current (A)
1 ms
10
10 ms
100 ms
1
1s
TA = 25 C
Single Pulse
10 s
0.1
DC
BVDSS
Limited
0.01
0.01
* VGS
1
0.1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 74451
S09-1338-Rev. B, 13-Jul-09
SiE822DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120
160
140
100
Power Dissipation (W)
I D - Drain Current (A)
120
100
80
Package Limited
60
80
60
40
40
20
20
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74451
S09-1338-Rev. B, 13-Jul-09
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SiE822DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 55 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Source
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74451.
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Document Number: 74451
S09-1338-Rev. B, 13-Jul-09
Package Information
Vishay Siliconix
PolarPAK
(Option S)
M4
Product datasheet/information page contain
links to applicable package drawing.
10
9
8
7
6
D
G
S
S
D
M3
VIEW A
E
E1
T2
T1
T4
T3
Q
T5
M4
M3
T3
M2
T5
Q
M1
D
G
S
S
D
1
2
3
4
5
c
A
(Top View)
Q
Q
H1
6
7
8
9
10
D
S
S
G
D
b1
b3
H4
H3 b2
H2
b1
H1
Z
K4
P1
K1
D1
D
A1
K4
P1
b4
b4
DETAIL Z
b5
D
5
b5
S
S
4
3
b5
G
D
2
1
VIEW A
(Bottom View)
Document Number: 73398
10-Jun-05
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1
Package Information
Vishay Siliconix
MILLIMETERS
Dim
A
A1
b1
b2
b3
b4
b5
c
D
D1
E
E1
H1
H2
H3
H4
K1
K4
M1
M2
M3
M4
P1
T1
T2
T3
T4
T5
Q
INCHES
Min
Nom
Max
Min
Nom
Max
0.75
0.80
0.85
0.030
0.031
0.033
0.00
−
0.05
0.000
−
0.002
0.48
0.58
0.68
0.019
0.023
0.027
0.41
0.51
0.61
0.016
0.020
0.024
2.19
2.29
2.39
0.086
0.090
0.094
0.89
1.04
1.19
0.035
0.041
0.047
0.23
0.33
0.43
0.009
0.013
0.017
0.20
0.25
0.30
0.008
0.010
0.012
6.00
6.15
6.30
0.236
0.242
0.248
5.74
5.89
6.04
0.226
0.232
0.238
5.01
5.16
5.31
0.197
0.203
0.209
4.75
4.90
5.05
0.187
0.193
0.199
0.23
−
−
0.009
−
−
0.45
−
0.56
0.020
−
0.022
0.31
0.41
0.51
0.012
0.016
0.020
0.45
−
0.56
0.020
−
0.022
4.22
4.37
4.52
0.166
0.172
0.178
0.24
−
−
0.009
−
−
4.30
4.50
4.70
0.169
0.177
0.185
3.43
3.58
3.73
0.135
0.141
0.147
0.22
−
−
0.009
−
−
0.05
−
−
0.002
−
−
0.15
0.20
0.25
0.006
0.008
0.010
3.48
3.64
4.10
0.137
0.143
0.150
0.56
0.76
0.95
0.22
0.030
0.037
1.20
−
−
0.051
−
−
3.90
−
−
0.154
−
−
0
0.18
0.36
0.000
0.007
0.014
0_
10_
12_
0_
10_
12_
ECN: S−51049—Rev. B, 13-Jun-05
DWG: 5947
Note: Millimeters govern over inches
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Document Number: 73398
10-Jun-05
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S
7.300
(0.287)
0.510
(0.020)
0.510
(0.020)
0.410
(0.016)
0.955
(0.038)
0.955
(0.038)
4.520
(0.178)
6.310
(0.248)
0.895
(0.035)
+
0.895
(0.035)
2.290
(0.090)
0.580
(0.023)
0.580
(0.023)
0.510
(0.020)
APPLICATION NOTE
Recommended Minimum for PolarPAK Option L and S
Dimensions in mm/(Inches)
No External Traces within Broken Lines
Dot indicates Gate Pin (Part Marking)
Return to Index
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Document Number: 73491
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000