VISHAY SIA910EDJ

New Product
SiA910EDJ
Vishay Siliconix
Dual N-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.028 at VGS = 4.5 V
4.5
0.033 at VGS = 2.5 V
4.5
0.042 at Vgs = 1.8 V
4.5
VDS (V)
12
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• Typical ESD Protection: 2400 V
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
6.2 nC
APPLICATIONS
PowerPAK SC-70-6 Dual
• Load Switch for Portable Applications
• High Frequency dc-to-dc Converter
• DC/DC Converter
1
S1
D1
D2
2
G1
3
D2
D1
D1
6
Marking Code
D2
5
2.05 mm
4
S2
2.05 mm
Part # code
G2
G1
CFX
G2
XXX
Lot Traceability
and Date code
S2
S1
Ordering Information: SiA910EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
12
±8
4.5a
4.5a
4.5a, b, c
4.5a, b, c
20
4.5a
1.6b, c
7.8
5
1.9b, c
1.2b, c
- 55 to 150
260
ID
IDM
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Continuous Source-Drain Diode Current
IS
PD
TJ, Tstg
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
b, f
t≤5s
Steady State
Symbol
RthJA
RthJC
Typical
52
12.5
Maximum
65
16
Unit
Maximum Junction-to-Ambient
°C/W
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 65535
S09-2267-Rev. A, 02-Nov-09
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1
New Product
SiA910EDJ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
12
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IGSS
IDSS
ID(on)
RDS(on)
gfs
ID = 250 µA
VDS = VGS , ID = 250 µA
V
8
mV/°C
- 2.5
0.4
1.0
VDS = 0 V, VGS = ± 8 V
±5
VDS = 0 V, VGS = ± 4.5 V
± 0.5
VDS = 12 V, VGS = 0 V
1
VDS = 12 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 4.5 V
10
V
µA
A
VGS = 4.5 V, ID = 5.2 A
0.023
0.028
VGS = 2.5 V, ID = 4.8 A
0.027
0.033
VGS = 1.8 V, ID = 2.5 A
0.035
0.042
VDS = 10 V, ID = 5.2 A
23
VDS = 10 V, VGS = 0 V, f = 1 MHz
190
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
455
VDS = 10 V, VGS = 8 V, ID = 6.8 A
td(off)
tf
tr
tf
16
6.2
9.5
nC
1.6
f = 1 MHz
VDD = 10 V, RL = 1.9 Ω
ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω
td(on)
td(off)
10.5
0.8
VDS = 10 V, VGS = 4.5 V, ID = 6.8 A
td(on)
tr
pF
150
VDD = 10 V, RL = 1.9 Ω
ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω
0.8
4
8
10
15
12
20
25
40
12
20
5
10
10
15
20
30
10
15
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
4.5
20
IS = 5.4 A, VGS = 0 V
IF = 5.4 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
25
50
ns
10
20
nC
13
12
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65535
S09-2267-Rev. A, 02-Nov-09
New Product
SiA910EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
10-2
10-3
3
I GSS - Gate Current (A)
I GSS - Gate Current (mA)
TJ = 25 °C
2
1
10-4
10-5
10-6
TJ = 150 °C
10-7
10-8
TJ = 25 °C
10-9
10-10
0
0
3
6
9
12
0
15
3
6
9
12
15
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
20
10
VGS = 5 V thru 2 V
8
I D - Drain Current (A)
I D - Drain Current (A)
16
VGS = 1.5 V
12
8
4
6
4
TC = 25 °C
2
TC = 125 °C
VGS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
0
0.0
3.0
0.3
VDS - Drain-to-Source Voltage (V)
1.2
1.5
Transfer Characteristics
0.08
800
0.06
600
VGS = 1.8 V
0.04
VGS = 2.5 V
VGS = 4.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.9
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.02
0.6
Ciss
400
Coss
Crss
200
0
0.00
0
5
10
15
20
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Document Number: 65535
S09-2267-Rev. A, 02-Nov-09
0
3
6
9
12
VDS - Drain-to-Source Voltage (V)
Capacitance
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New Product
SiA910EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.5
ID = 6.8 A
1.4
VGS = 1.8 V; ID = 2.5 A
VDS = 6 V
4
VDS = 9.6 V
VDS = 3 V
2
1.3
(Normalized)
6
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
8
1.2
1.1
VGS = 4.5 V, 2.5 V; ID = 5.5 A
1.0
0.9
0.8
0.7
- 50
0
0
4
8
12
- 25
0
Gate Charge
75
100
125
150
On-Resistance vs. Junction Temperature
0.08
R DS(on) - On-Resistance (Ω)
100
I S - Source Current (A)
50
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
10
TJ = 150 °C
TJ = 25 °C
1
0.1
0.0
25
ID = 2.5 A; TJ = 125 °C
0.06
ID = 5.2 A; TJ = 125 °C
0.04
ID = 2.5 A;
TJ = 25 °C
ID = 5.2 A; TJ = 25 °C
0.02
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.8
20
0.7
15
ID = 250 µA
Power (W)
VGS(th) (V)
0.6
0.5
10
0.4
5
0.3
0.2
- 50
- 25
0
25
50
75
TJ - Temperature (°C)
Threshold Voltage
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4
100
125
150
0
0.001
0.01
0.1
1
10
100
1000
Pulse (s)
Single Pulse Power (Junction-to-Ambient)
Document Number: 65535
S09-2267-Rev. A, 02-Nov-09
New Product
SiA910EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
Limited by RDS(on)*
I D - Drain Current (A)
10
100 µs
1 ms
1
10 ms
0.1
100 ms
1 s, 10 s
DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
8
15
Power Dissipation (W)
I D - Drain Current (A)
12
9
6
Package Limited
6
4
2
3
0
0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65535
S09-2267-Rev. A, 02-Nov-09
www.vishay.com
5
New Product
SiA910EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 110 °C/W
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65535.
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Document Number: 65535
S09-2267-Rev. A, 02-Nov-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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