UNISONIC TECHNOLOGIES CO., LTD UTM4953-H Preliminary POWER MOSFET -5A, -30V P-CHANNEL MOSFET DESCRIPTION The UTC UTM4953-H is a P-Channel MOSFET, it uses UTC’s advanced technology to provide the customers with fast switching, etc. The UTC UTM4953-H is suitable for high efficiency fast switching applications, etc. SOP-8 FEATURES * RDS(ON) < 55mΩ @ VGS=-10V, ID=-3A * Fast switching SYMBOL ORDERING INFORMATION Ordering Number Note: UTM4953G-S08-R Pin Assignment: G: Gate Package D: Drain SOP-8 S: Source Pin Assignment 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D2 D2 D1 D1 Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R210-010.a UTM4953-H Preliminary POWER MOSFET ABSOLUTE MAXIMUM RATING (TC=25°C unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V TC=25°C -5 A ID Continuous Drain Current TC=100°C -3.16 A Pulsed Drain Current (Note 1) IDM -20 A TC=25°C 2.1 W Power Dissipation PD Derate above 25°C 0.017 W/°C Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient SYMBOL θJA RATINGS 60 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Temperature Coefficient Static Drain-Source On-State Resistance SYMBOL TEST CONDITIONS BVDSS ID=-250µA, VGS=0V △BVDSS/△TJ Reference to 25°C , ID=-1mA VDS=-30V, VGS=0V, TJ=25°C IDSS VDS=-24V, VGS=0V, TJ=125°C VGS=+20V, VDS=0V IGSS VGS=-20V, VDS=0V VGS(TH) △VGS(TH) RDS(ON) www.unisonic.com.tw -30 -0.03 -1.2 VDS=VGS, ID=-250µA VGS=-10V, ID=-3A VGS=-4.5V, ID=-2A VDS=-10V, ID=-3A Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-15V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 2, 3) QG VDS=-15V, VGS=-4.5V, ID=-3A Gate to Source Charge (Note 2, 3) QGS Gate to Drain Charge (Note 2, 3) QGD Turn-ON Delay Time (Note 2, 3) tD(ON) Rise Time (Note 2, 3) tR VGS=-10V, VDD=-15V, ID=-1A , RG=6Ω Turn-OFF Delay Time (Note 2, 3) tD(OFF) Fall-Time (Note 2, 3) tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD VGS=0V, IS=-1A, TJ=25°C Continuous Source Current IS VG=VD=0V, Force Current Pulsed Source Current ISM Notes: 1. Repetitive Rating: Pulsed width limited by maximum junction temperature 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2% 3. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD MIN TYP MAX UNIT -1.6 V V/°C -1 µA -10 µA +100 nA -100 nA -2.5 4 V mV/° C mΩ mΩ S 45 65 3.5 55 85 560 55 40 810 80 60 pF pF pF 5.1 2 2.2 3.4 10.8 26.9 6.9 7 3 4 6 21 51 13 nC nC nC ns ns ns ns -1 -5 -10 V A A 2 of 3 QW-R210-010.a UTM4953-H Preliminary POWER MOSFET TEST CIRCUITS AND WAVEFORMS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R210-010.a