Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
URFP150
Power MOSFET
41A, 100V N-CHANNEL POWER
MOSFET
„
DESCRIPTION
1
The UTC URFP150 is an N-channel enhancement MOSFET using
UTC’s advanced technology to provide the customers with a
minimum on-state resistance and high switching speed.
„
TO-247
FEATURES
* RDS(ON)<55mΩ @ VGS=10V,ID=25A
* High Switching Speed
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
URFP150L-T47-T
URFP150G-T47-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-247
1
G
Pin Assignment
2
3
D
S
Packing
Tube
1 of 2
QW-R502-754.a
URFP150
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
„
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
41
A
Continuous
ID
Continuous Drain Current
A
Pulsed
IDM
160
Avalanche Current
IAR
41
A
Single Pulsed Avalanche Energy (Note 2)
EAS
830
mJ
Power Dissipation
PD
192
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L = 740μH, IAS = 41A, VDD = 25V, RG = 25 Ω
„
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA
Drain-Source Leakage Current
IDSS
VDS=80V
Forward
VGS=+20V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=25A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V,
Output Capacitance
COSS
f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDD=50V, VGS=10V,
Gate to Source Charge
QGS
ID=41A, IG=100µA,
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω,
V
Turn-OFF Delay Time
tD(OFF)
GS=0~10V
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=41A
MIN
TYP
MAX UNIT
100
2
10
+100
-100
V
µA
nA
nA
4
55
V
mΩ
2800
1100
280
pF
pF
pF
140
29
68
nC
nC
nC
ns
ns
ns
ns
41
160
2.5
A
A
V
16
120
60
81
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-754.a