UNISONIC TECHNOLOGIES CO., LTD 18NM70-SH Power MOSFET 18A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 18NM50-SH is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications. FEATURES * RDS(ON) < 0.35Ω @ VGS=10V, ID=9A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 18NM70L-TA3-T 18NM70G-TA3-T 18NM70L-TF3-T 18NM70G-TF3-T 18NM70L-TF1-T 18NM70G-TF1-T 18NM70L-TF2-T 18NM70G-TF2-T 18NM70L-TF3T-T 18NM70G-TF3T-T 18NM70L-TM3-T 18NM70G-TM3-T 18NM70L-TN3-R 18NM70G-TN3-R 18NM70L-TQ2-T 18NM70G-TQ2-T 18NM70L-TQ2-R 18NM70G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-252 TO-263 TO-263 1 G G G G G G G G G Pin Assignment 2 3 D S D S D S D S D S D S D S D S D S Packing Tube Tube Tube Tube Tube Tube Tape Reel Tube Tape Reel 1 of 7 QW-R205-076.B 18NM70-SH Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-076.B 18NM70-SH Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 18 A Pulsed Drain Current IDM 45 A Avalanche Current IAR 5 A Avalanche Energy Single Pulsed EAS 700 mJ Peak Diode Recovery dv/dt dv/dt 4.0 V/ns TO-220/TO-263 235 W TO-220F/TO-220F1 Power Dissipation PD 39 W TO-220F2/ TO-220F3 TO-251/TO-252 192 W Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L=56mH, IAS=5.0A, VDD=50V, RG=25Ω, Starting TJ=25°С 3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Drain current limited by maximum junction temperature. THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-220F3/TO-263 TO-251/TO-252 TO-220/TO-263 TO-220F/TO-220F1 Junction to Case TO-220F2/TO-220F3 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA RATING 62.5 UNIT °C/W 110 0.53 θJC 3.2 °C/W 0.65 3 of 7 QW-R205-076.B 18NM70-SH Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA Drain-Source Leakage Current IDSS VDS=700V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=9A (Note) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A, Gate Source Charge QGS IG=100µA (Note 1, 2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDS=30V, VGS=10V, ID=0.5A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source IS VGS=0V Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Repetitive Forward Current Drain-Source Diode Forward Voltage VSD IF=IS ,VGS=0V (Note ) Reverse Recovery Time trr VGS=0V, dIF/dt=100A/µs, IS=18A, VR=100V Reverse Recovery Charge Qrr Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating ambient temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 700 2.5 10 ±100 V µA nA 4.5 0.35 V Ω 340 295 30 pF pF pF 200 11 30 70 175 300 175 nC nC nC ns ns ns ns 440 7.8 18 A 54 A 1.5 V ns µC 4 of 7 QW-R205-076.B 18NM70-SH Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-076.B 18NM70-SH Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-076.B 18NM70-SH Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-076.B