UNISONIC TECHNOLOGIES CO., LTD 13NM65-SH Power MOSFET 13A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM65-SH is a high voltage super junction MOSFET and is designed to have better characteristics. The UTC 13NM65-SH Utilizing an advanced charge-balance technology, enhance system efficiency, improve EMI and reliability. such as low gate charge, low on-state resistance and have a high power density and high rugged avalanche characteristics. This super junction MOSFET usually used at AC/DC power conversion, and industrial power applications. FEATURES * RDS(ON) < 0.5Ω @ VGS = 10V, ID = 6.5A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13NM65L-TF3-T 13NM65G-TF3-T 13NM65L-TF1-T 13NM65G-TF1-T 13NM65L-TN3-R 13NM65G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F TO-220F1 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel 13NM65L-TF3-T (1) Packing Type (1) T: Tube, R: Tape Reel (2) Package Type (2) TF3: TO-220F, TF1: TO-220F1, TN3: TO-252 (3) Green Package (3) L: Lead Free, G: Halogen Free and Lead Free www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-077.D 13NM65-SH Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-077.D 13NM65-SH Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 13 A Pulsed Drain Current (Note 2) IDM 52 A Avalanche Current (Note 2) IAR 13 A Single Pulsed Avalanche Energy (Note 3) EAS 250 mJ Repetitive Avalanche Energy (Note 2) EAR 17 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220F/TO-220F1 168 Power Dissipation (TC=25°C) PD W TO-252 48 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 150mH, IAS = 2.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 13A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 5. Drain current limited by maximum junction temperature THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220F/TO-220F1 TO-252 TO-220F/TO-220F1 TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATING 62.5 110 0.74 1.79 UNIT °C/W °C/W °C/W °C/W 3 of 7 QW-R205-077.D 13NM65-SH Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0V, ID = 250μA 650 VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.5 Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 6.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, ID=1.3A, IG=100μA Gate-Source Charge QGS VGS=10V (Note 1,2) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD =30V, ID =0.5A, RG =25Ω, VGS=10V (Note 1,2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 13 A Reverse Recovery Time trr VGS = 0V, IS = 13A, dIF / dt =100A/μs (Note 1) Reverse Recovery Charge Qrr Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating ambient temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 100 -100 V μA nA nA V/°C 4.5 0.5 V Ω 0.5 780 500 30 pF pF pF 110 10 25 58 75 155 29 nC nC nC nS nS nS nS 376 5.3 13 A 52 A 1.4 V nS μC 4 of 7 QW-R205-077.D 13NM65-SH Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-077.D 13NM65-SH Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-077.D 13NM65-SH Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-077.D