UTC 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE(sat)= 0.5V(Max) *High speed switching time: tstg=1.0μS(Typ.) 1 TO-252 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C) PARAMETER SYMBOL LIMITS UNIT VCBO VCEO VEBO Ic IB Pc Tj Tstg 80 80 5 2 1 1 150 -55 ~ +150 V V V A A W °C °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL Collector Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain V(BR)CEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage Transition Frequency Collector Output Capacitance UTC TEST CONDITIONS Ic= 10mA, IB= 0 VCB=80V, IE= 0 VEB= 5V, Ic=0 VCE=2V, Ic=0.5A VCE=2V, Ic=1.5A Ic=1A, IB=0.05A Ic=1A, IB=0.05A VCE=2V, Ic=0.5A VCB= 10V, IE= 0, f=1MHz UNISONIC TECHNOLOGIES MIN TYP MAX 80 1.0 1.0 240 70 40 0.15 0.9 100 30 0.5 1.2 CO. LTD UNIT V μA μA V V MHz pF 1 QW-R209-015,A NPN EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL Turn-on Time Storage Time ton tstg TEST CONDITIONS IB1 20μs MIN INPUT IB1 IB2 Switching Time TYP MAX μs IB2 Fall Time Vcc=30 V tf UNIT 0.2 1.0 OUTPUT 30Ω UTC 2SC3669 0.2 IB1= -IB2=0.05A DUTY CYCLE≦1% CLASSIFICATION OF hFE1 RANK RANGE O 70-140 Y 120-240 ELECTRICAL CHARACTERISTICS CURVES Ic-VCE Collector Current, Ic (A) 25 1.6 10 35 1.2 0.8 IB=5mA 0.4 0 15 20 Common Emitter Ta=25℃ 0 2 4 6 8 10 12 Collector -Emitter Voltage, Vc E (V) VCE-Ic 2.0 Collector -Emitter Voltage, VcE (V) 1 Common Emitter Ta=25℃ 0.8 IB=5mA 10 0.6 30 15 20 0.4 40 50 0.2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Collector Current, Ic (A) VCE-Ic 0.8 0.6 IB=5mA 10 15 20 30 40 50 0.4 Common Emitter Ta=100℃ 0.2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Collector -Emitter Voltage, Vc E (V) Collector -Emitter Voltage, Vc E (V) VCE -Ic 1 1 IB=5mA 0.8 0.6 10 15 20 30 40 50 70 0.4 Common Emitter Ta=-55℃ 0.2 0 0 0.4 Collector Current, Ic (A) UTC UNISONIC TECHNOLOGIES 0.8 1.2 2.0 1.6 2.4 Collector Current, Ic (A) CO. LTD 2 QW-R209-015,A UTC 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR hFE -Ic Common Emitter VCE=2V 300 VCE(sat) -Ic Ta=100℃ 100 Ta=25℃ 50 Ta=-55℃ 30 10 0.01 0.03 0.1 0.3 1 2 Collector Emitter Saturation Voltage, VCE(sat) DC Current Gain hFE 500 0.5 0.3 Common Emitter Ic/IB=20 Ta=100℃ Ta=25℃ 0.1 Ta=-55℃ 0.05 0.03 0.01 0.01 0.03 0.05 0.1 Collector Current Ic (A) Collector Current, Ic (A) Base Emitter Saturation Voltage, VBE(sat) 2.0 Common Emitter Ic/IB=20 Ta=-55℃ 1 0.5 Ta=25℃ Ta=100℃ 0.3 0.1 0.01 0.03 0.05 0.1 1 Ic-VBE VBE(sat) -Ic 3 0.3 0.5 Collector Current Ic (A) 0.3 0.5 Collector Current, Ic (A) 1 2 Common Emitter VCE=2 V 1.6 1.2 Ta=100℃ 0.8 Ta=25℃ Ta=-55℃ 0.4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.6 Base -Emitter Voltage, VBE(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R209-015,A