UNISONIC TECHNOLOGIES CO., LTD 6NM60 Preliminary Power MOSFET 6.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 6NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications. FEATURES * RDS(on) < 1.08Ω @ VGS=10V, ID=3.0A * Improved dv/dt capability * Fast switching * 100% avalanche tested SYMBOL ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 6NM60L-TA3-T 6NM60G-TA3-T 6NM60L-TF1-T 6NM60G-TF1-T 6NM60L-TF2-T 6NM60G-TF2-T 6NM60L-TF3-T 6NM60G-TF3-T 6NM60L-TM3-R 6NM60G-TM3-R 6NM60L-TN3-R 6NM60G-TN3-R Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tape Reel 1 of 7 Ver.a 6NM60 Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 Ver.a 6NM60 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 6 A Pulsed Drain Current (Note 2) IDM 52 A Avalanche Current (Note 2) IAR 13 A Single Pulsed Avalanche Energy (Note 3) EAS 134 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.9 V/ns TO-220 125 W TO-220F/TO-220F1 40 W Power Dissipation PD TO-220F2 42 W TO-251/TO-252 60 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 159mH, IAS = 1.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-251/TO-252 TO-220 TO-220F/TO-220F1 Junction to Case TO-220F2 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATING 62.5 110 1 3.2 2.97 2.08 UNIT °C/W °C/W 3 of 7 Ver.a 6NM60 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) QG VDS=50V, ID=1.3A, VGS=10V Gate-Source Charge QGS IG=100μA (Note 1,2) Gate-Drain Charge QGD Turn-On Delay Time (Note 1) tD(ON) VDD=30V, ID=0.5A, RG=25Ω Turn-On Rise Time tR (Note 1,2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD VGS = 0V, IS = 6 A Reverse Recovery Time (Note 1) trr VGS = 0V, IS = 6A, dIF / dt =100A/μs (Note 1) Reverse Recovery Charge Qrr Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating ambient temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 600 2.5 10 100 -100 V μA nA nA 4.5 1.08 V Ω 360 170 21 pF pF pF 30 2.8 8.3 45 47 140 44 nC nC nC nS nS nS nS 6 24 1.4 325 2.64 A A V nS μC 4 of 7 Ver.a 6NM60 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 Ver.a 6NM60 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 Ver.a 6NM60 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 Ver.a