UNISONIC TECHNOLOGIES CO., LTD Preliminary UNA06R059H Power MOSFET 80A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UNA06R059H is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed, a minimum on-state resistance and low gate charge. The UTC UNA06R059H is suitable for DC-DC converter, motor control and load switching. FEATURES * RDS(ON) < 5.9mΩ @ VGS=10V, ID=25A * High switching speed * Low gate charge ORDERING INFORMATION Ordering Number Lead Free Halogen Free UNA06R059HL-TA3-T UNA06R059HG-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-084.b UNA06R059H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Diode Continuous Forward Current TC=25°C RATINGS UNIT 60 V ±20 V 40 A TC=25°C 80 (Note 1) A TC=100°C 59 A ID Continuous Drain Current TA=25°C 13 A TA=70°C 11 A Pulsed IDM 300 (Note 3) A Avalanche Current (Note 3) IAS 30 A Avalanche Energy (Note 3, 5) EAS 675 mJ TC=25°C 96 W TC=100°C 38 W Power Dissipation PD TA=25°C 2 W TA=70°C 1.3 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Current limited by bond wire. 3. Pulse width limited by max. junction temperature. 4. UIS tested and pulse width limited by maximum junction temperature 150°C (initial temperature TJ=25°C) 5. L=1.5mH, IAS=30A, VDD= 50V, RG=25Ω, Starting TJ=25°C 6. ISD≤30A, di/dt≤200A/μs, VDD≤BVDSS, starting TJ=25°C SYMBOL VDSS VGSS IS THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL t≤10S steady state steady state UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 20 60 1.3 UNIT °C/W °C/W °C/W 2 of 6 QW-R209-084.b UNA06R059H Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS ∆BVDSS ∆TJ IDSS Forward Reverse IGSS TEST CONDITIONS ID=250µA, VGS=0V www.unisonic.com.tw TYP MAX UNIT 60 Reference to 25°C, ID=250µA V 1.0 VDS=48V, VGS=0V VDS=48V, TJ=85°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=25A (Note 1) DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG VGS=0V, VDS=0V, f=1.0MHz SWITCHING PARAMETERS Total Gate Charge (Note 2) QG VGS=10V, VDS=50V Gate to Source Charge (Note 2) QGS ID=1.3A, IG=100µA Gate to Drain Charge (Note 2) QGD Turn-ON Delay Time (Note 2) tD(ON) Rise Time (Note 2) tR VDD=30V, VGS=10V I Turn-OFF Delay Time (Note 2) tD(OFF) D=0.5A, RG=25Ω Fall-Time (Note 2) tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=20A, VGS=0V (Note 2) Body Diode Reverse Recovery Time tRR IS=30A, dIS/dt=100A/µs Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse test ; pulse width ≤ 300us, duty cycle ≤ 2%. 2. Guaranteed by design, not subject to production testing. UNISONIC TECHNOLOGIES CO., LTD MIN 2.0 4.9 V/°C 1 30 +100 -100 µA µA nA nA 4.0 V 5.9 mΩ 445 376 199 1.0 pF pF pF Ω 350 40 40 230 200 550 210 nC nC nC ns ns ns ns 0.8 28 17.5 2.2 8.8 A A 1.3 V ns nC 3 of 6 QW-R209-084.b UNA06R059H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-084.b UNA06R059H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-084.b UNA06R059H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-084.b