Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UNA06R059H
Power MOSFET
80A, 60V N-CHANNEL POWER
MOSFET

DESCRIPTION
The UTC UNA06R059H is an N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed, a minimum on-state resistance and low gate
charge.
The UTC UNA06R059H is suitable for DC-DC converter, motor
control and load switching.

FEATURES
* RDS(ON) < 5.9mΩ @ VGS=10V, ID=25A
* High switching speed
* Low gate charge

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UNA06R059HL-TA3-T
UNA06R059HG-TA3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Diode Continuous Forward Current
TC=25°C
RATINGS
UNIT
60
V
±20
V
40
A
TC=25°C
80 (Note 1)
A
TC=100°C
59
A
ID
Continuous
Drain Current
TA=25°C
13
A
TA=70°C
11
A
Pulsed
IDM
300 (Note 3)
A
Avalanche Current (Note 3)
IAS
30
A
Avalanche Energy (Note 3, 5)
EAS
675
mJ
TC=25°C
96
W
TC=100°C
38
W
Power Dissipation
PD
TA=25°C
2
W
TA=70°C
1.3
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Current limited by bond wire.
3. Pulse width limited by max. junction temperature.
4. UIS tested and pulse width limited by maximum junction temperature 150°C (initial temperature TJ=25°C)
5. L=1.5mH, IAS=30A, VDD= 50V, RG=25Ω, Starting TJ=25°C
6. ISD≤30A, di/dt≤200A/μs, VDD≤BVDSS, starting TJ=25°C

SYMBOL
VDSS
VGSS
IS
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
t≤10S
steady state
steady state
UNISONIC TECHNOLOGIES CO., LTD
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θJA
θJC
RATINGS
20
60
1.3
UNIT
°C/W
°C/W
°C/W
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
∆BVDSS
∆TJ
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
ID=250µA, VGS=0V
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TYP
MAX UNIT
60
Reference to 25°C, ID=250µA
V
1.0
VDS=48V, VGS=0V
VDS=48V, TJ=85°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=25A
(Note 1)
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VGS=0V, VDS=0V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
VGS=10V, VDS=50V
Gate to Source Charge (Note 2)
QGS
ID=1.3A, IG=100µA
Gate to Drain Charge (Note 2)
QGD
Turn-ON Delay Time (Note 2)
tD(ON)
Rise Time (Note 2)
tR
VDD=30V, VGS=10V
I
Turn-OFF Delay Time (Note 2)
tD(OFF)
D=0.5A, RG=25Ω
Fall-Time (Note 2)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=20A, VGS=0V
(Note 2)
Body Diode Reverse Recovery Time
tRR
IS=30A, dIS/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse test ; pulse width ≤ 300us, duty cycle ≤ 2%.
2. Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
MIN
2.0
4.9
V/°C
1
30
+100
-100
µA
µA
nA
nA
4.0
V
5.9
mΩ
445
376
199
1.0
pF
pF
pF
Ω
350
40
40
230
200
550
210
nC
nC
nC
ns
ns
ns
ns
0.8
28
17.5
2.2
8.8
A
A
1.3
V
ns
nC
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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