UNISONIC TECHNOLOGIES CO., LTD UTT130N06M POWER MOSFET 80A, 60V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC UTT130N06M is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and extremely low on-state resistance, etc. The UTC UTT130N06M is suitable for secondary side synchronous rectification, DC-DC converter, motor control and load switching, etc. 1 TO-251 1 FEATURES DFN-8(5x6) * RDS(ON) < 5.9mΩ @ VGS=10V, ID=25A RDS(ON) < 7.2mΩ @ VGS=4.5V, ID=25A * High power and current handling capability * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UTT130N06ML-TA3-T UTT130N06MG-TA3-T TO-220 UTT130N06ML-TM3-T UTT130N06MG-TM3-T TO-251 UTT130N06MG-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 2 G D G D S S Pin Assignment 3 4 5 6 S - - S - - S G D D 7 D 8 D Packing Tube Tube Tape Reel 1 of 7 QW-R209-108.D UTT130N06M Power MOSFET MARKING TO-220 / TO-251 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw DFN-8(5×6) 2 of 7 QW-R209-108.D UTT130N06M Power MOSFET ABSOLUTE MAXIMUM RATING (TC =25°С, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Diode Continuous Forward Current RATINGS UNIT 60 V ±20 V 40 A Continuous 80 (Note 2) A Drain Current 300 (Note 3) A Pulsed Avalanche Current (Note 4) 30 A Avalanche Energy (Note 5) 450 mJ TO-220 290 W Power Dissipation PD TO-251 126 W DFN-8(5×6) 96 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Current limited by bond wire. 3. Pulse width limited by max. junction temperature. 4. UIS tested and pulse width limited by maximum junction temperature 150°C (initial temperature TJ=25°C) 5. L=1mH, IAS=30A, VDD= 50V, RG=25Ω, Starting TJ=25°C 6. ISD≤30A, di/dt≤200A/μs, VDD≤BVDSS, starting TJ=25°C SYMBOL VDSS VGSS IS ID IDM IAS EAS THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220 TO-251 DFN-8(5×6) TO-220 TO-251 DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 75 110 0.43 1.0 1.3 UNIT °C/W °C/W °C/W °C/W °C/W °C/W 3 of 7 QW-R209-108.D UTT130N06M Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=60V, VGS=0V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance VGS=10V, ID=25A RDS(ON) (Note 1) VGS=4.5V, ID=25A DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 1) QG VDS=50V, ID=1.3A, IG=100μA Gate to Source Charge QGS VGS=10V (Note 1,2) Gate to Drain Charge QGD Turn-ON Delay Time (Note 1) tD(ON) Rise Time tR VDD=30V, ID=0.5A, RG=25Ω, VGS=10V (Note 1,2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD IS=20A, VGS=0V Body Diode Reverse Recovery Time (Note 1) trr IS=30A, dIF/dt=100A/µs Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse test: pulse width ≤ 300us, duty cycle ≤ 2%. 2. Guaranteed by design, not subject to production testing. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 60 1.0 4.3 5.6 1 +100 -100 V µA nA nA 3.0 5.9 7.2 V mΩ mΩ 454 364 313 pF pF pF 620 24 36 100 150 1850 560 nC nC nC ns ns ns ns 40 0.8 33 41 160 1.3 A A V ns µC 4 of 7 QW-R209-108.D UTT130N06M Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-108.D UTT130N06M Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-108.D UTT130N06M Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-108.D