IRFR/U3410 HEXFET® Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max ID 39mΩ 31A 100V l D-Pak IRFR3410 I-Pak IRFU3410 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C dv/dt TJ TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 100 ± 20 31 22 125 110 3.0 0.71 15 -55 to + 175 V A W W°C V/ns °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA RθJA 1 / 10 Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. Max. Units ––– ––– ––– 1.4 40 110 °C/W www.kersemi.com IRFR/U3410 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 ––– ––– 2.0 ––– ––– ––– ––– Typ. ––– 0.11 34 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 39 mΩ VGS = 10V, ID = 18A 4.0 V VDS = VGS, ID = 250µA 20 VDS = 100V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 200 VGS = 20V nA -200 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 33 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 37 10 11 12 27 40 13 1690 220 26 1640 130 250 Max. Units Conditions ––– S VDS = 25V, ID = 18A 56 ID = 18A ––– nC VDS = 50V ––– VGS = 10V, ––– VDD = 50V ––– ID = 18A ns ––– R G = 9.1Ω ––– VGS = 10V ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 80V Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current Typ. Max. Units ––– ––– 140 18 mJ A Diode Characteristics IS ISM VSD trr Qrr ton 2 / 10 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 31 showing the A G integral reverse ––– ––– 125 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V ––– 84 ––– ns TJ = 25°C, IF = 18A ––– 260 ––– nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.kersemi.com IRFR/U3410 1000 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 10 4.5V 20µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 0.1 VDS = 50V 20µs PULSE WIDTH 6.0 7.0 8.0 Fig 3. Typical Transfer Characteristics 100 9.0 ID = 30A VGS = 10V 2.0 (Normalized) T J = 25°C VGS , Gate-to-Source Voltage (V) 3 / 10 RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (Α) T J = 175°C 5.0 10 Fig 2. Typical Output Characteristics 3.0 4.0 1 VDS, Drain-to-Source Voltage (V) 1000 1 20µs PULSE WIDTH Tj = 175°C 1 100 Fig 1. Typical Output Characteristics 10 4.5V 10 VDS, Drain-to-Source Voltage (V) 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 1.0 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature www.kersemi.com IRFR/U3410 100000 ID= 18A VGS , Gate-to-Source Voltage (V) Coss 10000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd = Cds + Cgd Ciss 1000 Coss 100 Crss 16 12 8 4 0 10 1 10 0 100 10 30 40 50 60 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.0 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 20 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100.0 OPERATION IN THIS AREA LIMITED BY RDS (on) 100 TJ = 175°C 10.0 1.0 TJ = 25°C 1msec 1 0.1 0.0 0.5 1.0 1.5 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 2.0 100µsec 10 VGS = 0V 0.1 4 / 10 VDS = 80V VDS= 50V VDS= 20V Tc = 25°C Tj = 175°C Single Pulse 1 10 10msec 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.kersemi.com 1000 IRFR/U3410 32 ID , Drain Current (A) 28 RD V DS LIMITED BY PACKAGE VGS 24 D.U.T. RG + -VDD 20 VGS 16 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 12 Fig 10a. Switching Time Test Circuit 8 VDS 4 90% 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 / 10 www.kersemi.com 0.1 IRFR/U3410 L VDS D.U.T RG VGS 20V IAS tp DRIVER + V - DD A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) 250 15V TOP BOTTOM 200 ID 7.3A 13A 18A 150 100 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 / 10 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.kersemi.com IRFR/U3410 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs 7 / 10 www.kersemi.com IRFR/U3410 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.85mH RG = 25Ω, IAS = 18A. ISD ≤ 18A, di/dt ≤ 360A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 10 / 10 www.kersemi.com