IRF IRFU3709PBF

PD - 95519A
IRFU3709PbF
SMPS MOSFET
Applications
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High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
High Frequency Buck Converters for
Computer Processor Power
Lead-Free
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
30V
9.0mΩ
90A„
Benefits
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Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V VGS
Fully Characterized Avalanche Voltage
and Current
I-Pak
IRFU3709
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
30
±20
90 „
57 „
360
120
48
0.96
-55 to + 150
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
1.04
110
°C/W
Notes  through „ are on page 9
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1
12/06/04
IRFU3709PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.029
6.9
7.9
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
9.0
VGS = 10V, ID = 15A ƒ
mΩ
10.5
VGS = 4.5V, ID = 12A ƒ
3.0
V
VDS = VGS, ID = 250µA
20
VDS = 24V, VGS = 0V
µA
100
VDS = 24V, VGS = 0V, TJ = 125°C
200
VGS = 16V
nA
-200
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
53
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
27
6.7
9.7
22
11
171
21
9.2
2672
1064
109
Max. Units
Conditions
–––
S
VDS = 15V, ID = 30A
41
ID = 15A
–––
nC
VDS = 15V
–––
VGS = 4.5V ƒ
–––
VGS = 0V, VDS = 10V
–––
VDD = 15V
–––
ID = 30A
ns
–––
RG = 1.8Ω
–––
VGS = 4.5V ƒ
–––
VGS = 0V
–––
pF
VDS = 16V
–––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
Max.
Units
–––
–––
382
30
mJ
A
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
90 „
–––
–––
360
–––
–––
–––
–––
–––
–––
0.88
0.82
48
46
48
52
1.3
–––
72
69
72
78
A
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 30A, VGS = 0V ƒ
TJ = 125°C, IS = 30A, VGS = 0V ƒ
TJ = 25°C, I F = 30A, VR=15V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 30A, VR=15V
di/dt = 100A/µs ƒ
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IRFU3709PbF
1000
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
1000
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
TOP
100
100
2.7V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
2.7V
10
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
100
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
1000
TJ = 25 ° C
TJ = 150 ° C
100
10
2.0
V DS= 15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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7.0
2.0
ID = 90A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFU3709PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
3000
Ciss
2000
Coss
1000
0
6
VGS , Gate-to-Source Voltage (V)
4000
ID = 30A
5
4
3
2
1
Crss
1
10
0
100
0
5
VDS , Drain-to-Source Voltage (V)
15
20
25
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
ISD , Reverse Drain Current (A)
10
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100 T = 150 ° C
J
ID , Drain Current (A)
1000
10us
100
10
TJ = 25 ° C
100us
1ms
10
1
0.1
0.2
V GS = 0 V
0.8
1.4
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
V DS= 24V
V DS= 15V
V DS= 6V
1
2.6
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFU3709PbF
100
LIMITED BY PACKAGE
VGS
80
ID , Drain Current (A)
RD
V DS
RG
60
D.U.T.
+
-VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
t1
0.05
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
EAS , Single Pulse Avalanche Energy (mJ)
IRFU3709PbF
1200
15V
TOP
1000
L
VDS
DRIVER
D.U.T
RG
+
V
- DD
IAS
20V
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
BOTTOM
ID
13A
19A
30A
800
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFU3709PbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFU3709PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
8
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IRFU3709PbF
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: THIS IS AN IRFU120
WITH AS S EMBLY
LOT CODE 5678
AS SEMBLED ON WW 19, 1999
IN T HE AS S EMBLY LINE "A"
INTERNATIONAL
RECTIF IER
LOGO
PART NUMBER
IRF U120
919A
56
78
AS SEMBLY
LOT CODE
Note: "P" in as s embly line
pos ition indicates "Lead-Free"
DAT E CODE
YEAR 9 = 1999
WEEK 19
LINE A
OR
PART NUMBER
INT ERNATIONAL
RECT IF IER
LOGO
IRF U120
56
ASS EMBLY
LOT CODE
78
DAT E CODE
P = DESIGNAT ES LEAD-F REE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 19
A = ASS EMBLY SITE CODE
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.85mH
R G = 25Ω, IAS = 30A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
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