UNISONIC TECHNOLOGIES CO., LTD UD8404 Preliminary POWER MOSFET DUAL ENHANCEMENT MODE, FIELD EFFECT TRANSISTOR SILICON (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC UD8404 is a dual Channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, etc. The UTC UD8404 is suitable for portable equipment applications and motor drive applications. SOP-8 FEATURES P-Channel * -30V, -4A RDS(ON) < 38 mΩ (Typ.) @ VGS=-10V, ID=-2A RDS(ON) < 58 mΩ (Typ.) @ VGS=-4.5V, ID=-2A N-Channel * 30V, 4A RDS(ON) < 38 mΩ (Typ.) @ VGS=10V, ID=2A RDS(ON) < 58 mΩ (Typ.) @ VGS=4.5V, ID=2A * Low leakage current SYMBOL www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R211-027.a UD8404 Power MOSFET ORDERING INFORMATION Note: Preliminary Ordering Number Package UD8404G-S08-R Pin Assignment: G: Gate D: Drain SOP-8 Pin Assignment 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D2 D2 D1 D1 Packing Tape Reel S: Source MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R211-027.a UD8404 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATING (TA = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS N-Ch 30 30 ±20 2 2.6 4 16 P-Ch -30 -30 ±20 -2 2.6 -4 -16 UNIT Drain-Source Voltage VDSS V Drain-Gate Voltage (RGS=20kΩ) VDGR V Gate-Source Voltage VGSS V Avalanche Current IAR A Single Pulse Avalanche Energy (Note 3) EAS mJ DC (Note 5) ID A Drain Current A Pulse (Note 5) IDP Single-dvice operation 1.48 W (Note 7a) Power Dissipation (t=5s) PD (Note 6) Single-dvice value at dual 1.23 W operation (Note 7b) Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L=0.5mH, IAS=±2A, VDD= 50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤15A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 5. The channel temperature should not exceed 150°C during use. 6. Device mounted on a glass-epoxy board FR-4 25.4 × 25.4 × 0.8 mm. 7. (a) The power dissipation and thermal resistance values shown are for a single device. (During single-device operation, power is only applied to one device.) (b) The power dissipation and thermal resistance values shown are for a single device. (During dual operation, power is evenly applied to both devices.) THERMAL RESISTANCES CHARACTERISTICS PARAMETER Single-dvice operation (Note 7a) Junction to Ambient (Note 6) Single-dvice value at dual operation (Note 7a) Single-dvice operation (Note 7b) Junction to Case (Note 6) Single-dvice value at dual operation (Note 7b) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATINGS UNIT 84.5 °C/W 215.5 °C/W 101.6 °C/W 347.2 °C/W θJA θJC 3 of 6 QW-R211-027.a UD8404 Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°С, unless otherwise specified) N-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain Cut-Off Current Gate Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance TEST CONDITIONS Turn-OFF Time MIN BVDSS BVDSX IDSS IGSS ID=10mA, VGS=0V ID=10mA, VGS=-20V VDS=30V, VGS=0V VGS=±20V, VDS=0V 30 10 VGS(TH) VDS=10V, ID=1mA VGS=10V, ID=2A VGS=4.5V, ID=2A VDS=10V, ID=2A 1.3 RDS(ON) |Yfs| CISS CRSS COSS 4 QG QGS1 QGD tR tON tF VDD≈24V, VGS=10V, ID=4A tOFF TYP MAX UNIT 10 ±100 VGS=0V, VDS=10V, f=1.0MHz 4.7Ω Forward Transfer Admittance DYNAMIC PARAMETERS Input Capacitance Reverse Transfer Capacitance Output Capacitance SWITCHING PARAMETERS Total Gate Charge (Gate-Source Plus Gate-Drain) Gate-Source Charge 1 Gate-Drain (“Miller”) Charge Rise Time Turn-ON Time Fall-Time SYMBOL RL=7.5Ω Preliminary 38 58 8 2.5 50 80 V V µA nA V mΩ mΩ S 190 45 60 pF pF pF 4.6 nC 0.7 1.4 4.5 9.0 3.0 nC nC ns ns ns 12 ns Duty≤1%, tW=10μs SOURCE TO DRAIN DIODE SPECIFICATIONS Drain Reverse Current Pulse (Note) IDRP Forward Voltage (Diode) VDSF IDR=4A, VGS=0V Note: The channel temperature should not exceed 150°C during use. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 16 -1.2 A V 4 of 6 QW-R211-027.a UD8404 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (Cont.) P-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain Cut-Off Current Gate Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance DYNAMIC PARAMETERS Input Capacitance Reverse Transfer Capacitance Output Capacitance SYMBOL TEST CONDITIONS BVDSS BVDSX IDSS IGSS ID=-10mA, VGS=0V ID=-10mA, VGS=20V VDS=-30V, VGS=0V VGS=±20V, VDS=0V -30 -10 VGS(TH) VDS=-10V, ID=-1mA -0.8 RDS(ON) VGS=-10V, ID=-2.0A VGS=-4.5V, ID=-2.0A |Yfs| VDS=-10V, ID=-2.0A CISS CRSS COSS VGS=0V, VDS=-10V, f=1.0MHz Total Gate Charge QG (Gate-Source Plus Gate-Drain) VDD≈-24V, VGS=-10V, ID=-4A Gate-Source Charge 1 QGS Gate-Drain (“Miller”) Charge QGD SWITCHING PARAMETERS Rise Time tR Turn-ON Time tON Duty ≤1%, tW=10μs Fall-Time tF Turn-OFF Time tOFF SOURCE TO DRAIN DIODE SPECIFICATIONS Drain Reverse Current Pulse (Note) IDRP Forward Voltage (Diode) VDSF IDR=-4A, VGS=0V Note: The channel temperature should not exceed 150°C during use. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 3.7 -10 ±100 V V µA nA -2.0 V 38 50 mΩ 58 80 mΩ 7.3 S 510 110 170 pF pF pF 13 nC 1.7 4.6 nC nC 11 20 37 99 ns ns ns ns -16 1.2 A V 5 of 6 QW-R211-027.a UD8404 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R211-027.a