UNISONIC TECHNOLOGIES CO., LTD 9N95-E Advance Power MOSFET 9A, 950V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N95-E uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 1.4Ω @ VGS = 10V, ID = 4.5A * Ultra Low Gate Charge ( Typical 45 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 9N95L-TC3-T 9N95G-TC3-T Pin Assignment: G: Gate D: Drain S: Source Package TO-230 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R209-068.a 9N95-E Advance Power MOSFET ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified) SYMBOL RATINGS UNIT Drain-Source Voltage PARAMETER VDSS 950 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (TC = 25°C) ID 9.0 A Pulsed Drain Current (Note 2) IDM 36 A Avalanche Current (Note 2) IAR 9.0 A Single Pulsed(Note 3) EAS 900 mJ Repetitive(Note 2) EAR 28 mJ 4.0 V/ns Avalanche Energy Peak Diode Recovery dv/dt (Note 4) Power Dissipation Linear Derating Factor above TC = 25°C Junction Temperature dv/dt PD TJ 147 W 1.176 W/°C 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤9.0A, di/dt ≤ 200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD RATINGS 62.5 0.85 UNIT °C/W °C/W 2 of 7 www.unisonic.com.tw QW-R209-068.a 9N95-E Advance Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250μA 950 V Drain-Source Leakage Current IDSS VDS = 950 V, VGS = 0 V 10 μA Forward IGSSF VGS = 30 V, VDS = 0 V 100 nA Gate-Body Leakage Current VGS = -30 V, VDS = 0 V -100 nA Reverse IGSSR Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.99 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 3.0 5.0 V Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 4.5A 1.05 1.4 Ω DYNAMIC PARAMETERS Input Capacitance CISS 2100 2730 pF VDS = 25 V, VGS = 0 V, Output Capacitance COSS 175 230 pF f = 1.0 MHz 14 18 pF Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG 45 58 nC VDS = 760V, ID = 11.0A, Gate-Source Charge QGS 13 nC VGS = 10 V (Note 1,2) 18 nC Gate-Drain Charge QGD Turn-On Delay Time tD(ON) 50 110 ns VDD = 475V, ID =11.0 A, Turn-On Rise Time tR 120 250 ns RG = 25Ω (Note 1, 2) 100 210 ns Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF 75 160 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 9.0 A 1.4 V Maximum Continuous Drain-Source Diode IS 9.0 A Forward Current Maximum Pulsed Drain-Source Diode ISM 36 A Forward Current Reverse Recovery Time trr 550 ns VGS = 0 V, IS = 9.0 A, dIF / dt =100 A/μs (Note 1) Reverse Recovery Charge QRR 6.5 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD 3 of 7 www.unisonic.com.tw QW-R209-068.a 9N95-E Advance Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD 4 of 7 www.unisonic.com.tw QW-R209-068.a 9N95-E Advance Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD VDD VDS(t) Time tP Unclamped Inductive Switching Waveforms 5 of 7 www.unisonic.com.tw QW-R209-068.a 9N95-E Advance UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 6 of 7 www.unisonic.com.tw QW-R209-068.a 9N95-E Advance Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw QW-R209-068.a