Datasheet

UNISONIC TECHNOLOGIES CO., LTD
9N90
Power MOSFET
9A, 900V N-CHANNEL
POWER MOSFET
DESCRIPTION

The UTC 9N90 uses UTC’s advanced proprietary, planar stripe,
DMOS technology to provide excellent RDS(ON), low gate charge
and operation with low gate voltages. This device is suitable for use
as a load switch or in PWM applications.
FEATURES

* RDS(ON) < 1.4Ω @ VGS = 10V, ID = 4.5A
* Ultra Low Gate Charge (Typical 45 nC)
* Low Reverse Transfer Capacitance (CRSS = Typical 14 pF)
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
9N90L-T47-T
9N90G-T47-T
9N90L-T3P-T
9N90G-T3P-T
9N90L-T3N-T
9N90G-T3N-T
9N90L-TC3-T
9N90G-TC3-T
9N90L-TF1-T
9N90G-TF1-T
9N90L-TF2-T
9N90G-TF2-T
Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-247
TO-3P
TO-3PN
TO-230
TO-220F1
TO-220F2
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
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QW-R502-217.M
9N90
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Power MOSFET
MARKING
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9N90

Power MOSFET
ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
900
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current (TC = 25°C)
ID
9.0
A
Pulsed Drain Current (Note 2)
IDM
36
A
Avalanche Current (Note 2)
IAR
9.0
A
Single Pulsed(Note 3)
EAS
900
mJ
Avalanche Energy
28
mJ
Repetitive(Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
TO-247
160
W
TO-3P/TO-3PN
240
Power Dissipation
TO-230
147
W
TO-220F1
56
TO-220F2
58
PD
TO-247
1.28
TO-3P/TO-3PN
1.92
Linear Derating Factor above
W/°C
TO-230
1.176
TC = 25°C
TO-220F1
0.448
TO-220F2
0.464
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤9.0A, di/dt ≤ 200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-247
TO-3P/TO-3PN
Junction to Ambient
TO-220F1/ TO-220F2
TO-230
TO-247
TO-3P/TO-3PN
Junction to Case
TO-230
TO-220F1
TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
RATINGS
50
40
UNIT
°C/W
62.5
θJC
0.78
0.52
0.85
2.25
2.15
°C/W
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ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250μA
900
Drain-Source Leakage Current
IDSS
VDS = 900 V, VGS = 0 V
Forward
IGSSF
VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current
VGS = -30 V, VDS = 0 V
Reverse
IGSSR
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
0.99
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
3.0
Static Drain-Source On-Resistance
RDS(ON)
VGS = 10V, ID = 4.5A
1.05
DYNAMIC PARAMETERS
Input Capacitance
CISS
1870
VDS = 25 V, VGS = 0 V,
Output Capacitance
COSS
185
f = 1.0 MHz
21
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
215
VDS = 50V, VGS = 10 V
ID = 1.3A, IG = 100μA
Gate-Source Charge
QGS
17
(Note 1,2)
44
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
100
VDD = 30V, VGS = 10V,
Turn-On Rise Time
tR
170
ID =0.5 A, RG = 25Ω
Turn-Off Delay Time
tD(OFF)
410
(Note 1, 2)
175
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 9.0 A
Reverse Recovery Time
trr
550
VGS = 0 V, IS = 9.0 A,
dIF / dt =100 A/μs (Note 1)
Reverse Recovery Charge
QRR
6.5
Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MAX UNIT
V
10
μA
100 nA
-100 nA
V/°C
5.0
1.4
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
9.0
A
36
A
1.4
V
ns
μC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
Unclamped Inductive Switching Test Circuit
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VDD
VDS(t)
Time
tP
Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
200
200
150
150
100
100
50
50
0
0
0
0.7
1.4 2.1
2.8 3.5 4.2
Gate Threshold Voltage, VTH (V)
Continuous Drain-Source Diode
Forward Current, IS (A)
0
200
600
800 1000
400
Drain-Source Breakdown Voltage, BVDSS (V)
Drain Current, ID (A)

Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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