UNISONIC TECHNOLOGIES CO., LTD 9N90-Q Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 1.4Ω @ VGS = 10V, ID = 4.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9N90L-TA3-T 9N90G-TA3-T 9N90L-T3P-T 9N90G-T3P-T Package TO-220 TO-3P Pin Assignment 1 2 3 G D S G D S Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A93.B 9N90-Q Power MOSFET ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 900 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (TC = 25°C) ID 9.0 A Pulsed Drain Current (Note 2) IDM 36 A Avalanche Current (Note 2) IAR 9.0 A Single Pulsed(Note 3) EAS 500 mJ Avalanche Energy Repetitive(Note 2) EAR 28 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns TO-220 147 W Power Dissipation TO-3P 208 W PD 1.176 W/°C Linear Derating Factor above TC = TO-220 25°C TO-3P 1.66 W/°C Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 12.35mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 9.0A, di/dt ≤ 200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA Junction to Ambient Junction to Case PARAMETER TO-220 TO-3P TO-220 TO-3P UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 40 0.85 0.6 UNIT °C/W °C/W °C/W °C/W 2 of 6 QW-R502-A93.B 9N90-Q Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250μA 900 V Drain-Source Leakage Current IDSS VDS = 900 V, VGS = 0 V 10 μA VGS = 30 V, VDS = 0 V 100 nA Forward IGSSF Gate-Body Leakage Current Reverse IGSSR VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.99 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 3.0 5.0 V Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 4.5A 1.26 1.4 Ω DYNAMIC PARAMETERS 1450 2730 pF Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS 157 230 pF f = 1.0 MHz Reverse Transfer Capacitance CRSS 21 26 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 95 110 ns Turn-On Rise Time tR 200 250 ns VDD = 30V, ID =0.5 A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 340 390 ns Turn-Off Fall Time tF 200 250 ns Total Gate Charge QG 56 70 nC VDS =50V, ID = 1.3A, Gate-Source Charge QGS 7.4 nC VGS = 10 V (Note 1,2) Gate-Drain Charge QGD 17 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 9.0 A 1.4 V Maximum Continuous Drain-Source Diode IS 9.0 A Forward Current Maximum Pulsed Drain-Source Diode ISM 36 A Forward Current Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-A93.B 9N90-Q Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-A93.B 9N90-Q Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VDD VDS(t) Time tP Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-A93.B 9N90-Q TYPICAL CHARACTERISTICS 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 200 200 150 150 100 100 50 50 0 0 0 0.7 1.4 2.1 2.8 3.5 4.2 Gate Threshold Voltage, VTH (V) Continuous Drain-Source Current, ISD (A) 400 0 200 600 800 1000 Drain-Source Breakdown Voltage, BVDSS (V) Drain Current, ID (A) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-A93.B