UNISONIC TECHNOLOGIES CO., LTD Advance UTT9NP03 Power MOSFET 30V DUAL MIDDLE POWER MOSFET (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC UTT9NP03 is a 30V N-Channel & P-Channel middle Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, etc. The UTC UTT9NP03 is suitable for switching. SOP-8 FEATURES * Low on-resistance SYMBOL (5)(6)(7)(8) Drain (4) Gate (2) Gate Source (1) N-Channel Source (3) P-Channel ORDERING INFORMATION Ordering Number Note: UTT9NP03G-S08-R Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source 1 S Pin Assignment 2 3 4 5 6 7 G S G D D D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R211-028.b UTT9NP03 Advance Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage RATINGS TR1 30 ±20 ±9.0 ±18 3.5 7.0 TR2 -30 ±20 ±8.0 ±18 2.2 -5.5 UNIT VDSS V VGSS V Continuous (Note 4) ID A Drain Current A Pulsed (Note 5) IDP Avalanche Energy, Single Pulse (Note 3) EAS mJ Avalanche Current (Note 3) IAS A PD (Note 4) 2.6 W Total Power Dissipation 1.5 W PD (Note 6) Element PD (Note 6) 1.25 W Junction Temperature TJ 150 °C Range of Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. N-CHANNEL : L=0.1mH, VDD=15V, RG=25 Ω, Starting TJ = 25°C P-CHANNEL : L=0.1mH, VDD=-15V, RG=25 Ω, Starting TJ = 25°C 4. PW ≤ 1s, Limited only by maximum temperature allowed. 5. PW ≤ 10µs, Duty cycle ≤ 1%. 6. Mounted on a ceramic board. THERMAL DATA PARAMETER Junction to Ambient (Note 6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA RATINGS 83.3 UNIT °С/W 2 of 7 QW-R211-028.b UTT9NP03 Advance Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) N-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Pulsed) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±20V, VDS=0V 30 VGS(TH) VDS=VGS, ID=1mA VGS=10V, ID=9A VGS=4.5V, ID=7A VGS=5V, ID=7A 1.0 RDS(ON) Transconductance (Pulsed) gFS DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=15V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Pulsed) QG VGS=4.5V, VDD=15V, ID=9A Gate to Source Charge (Pulsed) QGS (Note 1, 2) Gate to Drain Charge (Pulsed) QGD Turn-ON Delay Time (Pulsed) tD(ON) VDD=15V, VGS=10V, ID=4.5A, Rise Time (Pulsed) tR RG=10Ω, RL=3.3Ω (Note 1, 2) Turn-OFF Delay Time (Pulsed) tD(OFF) Fall-Time (Pulsed) tF SOURCE TO DRAIN DIODE SPECIFICATIONS Body Diode Continuous Forward IS Current TA=25°C Body Diode Pulse Current (Note 3) ISP Forward Voltage (Pulsed) VSD IS=1A, VGS=0V Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. 3. PW ≤ 10µs, Duty cycle ≤ 1%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 12.3 18.2 MAX UNIT 1 ±100 V µA nA 2.5 16.0 23.7 4.4 V mΩ mΩ S 640 110 90 pF pF pF 7.9 3.1 2.8 8 19 33 7 nC nC nC ns ns ns ns 1.0 A 18 1.2 A V 3 of 7 QW-R211-028.b UTT9NP03 Advance Power MOSFET ELECTRICAL CHARACTERISTICS (Cont.) P-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Pulsed) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS ID=-1mA, VGS=0V VDS=-30V, VGS=0V VGS=±20V, VDS=0V -30 VGS(TH) VDS=VGS, ID=-1mA VGS=-10V, ID=-8A VGS=-4.5V, ID=-5.5A VGS=-5V, ID=-5.5A -1.0 RDS(ON) Transconductance (Pulsed) gFS DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-15V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Pulsed) QG VGS=-4.5V, VDD=-15V, ID=-8A Gate to Source Charge (Pulsed) QGS (Note 1, 2) Gate to Drain Charge (Pulsed) QGD Turn-ON Delay Time (Pulsed) tD(ON) VDD=-15V, VGS=-10V, ID=-4A, Rise Time (Pulsed) tR RG=10Ω, RL=3.8Ω Turn-OFF Delay Time (Pulsed) tD(OFF) (Note 1, 2) Fall-Time (Pulsed) tF SOURCE TO DRAIN DIODE SPECIFICATIONS Body Diode Continuous Forward IS Current TA=25°C Body Diode Pulse Current (Note 2) ISP Forward Voltage (Pulsed) VSD IS=-1A, VGS=0V Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. 3. PW ≤ 10µs, Duty cycle ≤ 1%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 22.0 31.0 MAX UNIT -1 ±100 V µA nA -2.5 28.6 40.3 5.5 V mΩ mΩ S 890 160 125 pF pF pF 9.8 3.0 3.7 10 16 55 22 nC nC nC ns ns ns ns -1.0 A -18 -1.2 A V 4 of 7 QW-R211-028.b UTT9NP03 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS N-CHANNEL VG Same Type as DUT 12V QG VGS 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 7 QW-R211-028.b UTT9NP03 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) P-CHANNEL VG Same Type as DUT 12V QG VGS 200nF 50kΩ VDS 300nF QGS QGD VGS DUT -3mA Charge Gate Charge Test Circuit Gate Charge Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS -10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R211-028.b UTT9NP03 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R211-028.b