TCET1100, TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature FEATURES C E • High common mode rejection 4 3 • Low temperature coefficient of CTR • CTR offered in 9 groups • Reinforced isolation provides circuit protection against electrical shock (safety class II) 1 2 A C C • Isolation materials according to UL 94 V-O V D E 17197_5 17197_4 • Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664) • Climatic classification 55/100/21 (IEC 60068 part 1) • Rated impulse VIOTM = 6 kVpeak voltage (transient overvoltage) • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV DESCRIPTION The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. AGENCY APPROVALS • UL1577, file no. E52744, double protection • cUL tested, file A52744 • BSI: EN 60065:2002, EN 60950:2000 • Rated isolation VIOWM = 600 VRMS voltage • Rated recurring VIORM = 848 Vpeak (RMS peak includes voltage DC) (repetitive) • Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 175 • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in • DIN EN 60747-5-5 (VDE 0884) • FIMKO APPLICATIONS Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): • for appl. class I - IV at mains voltage ≤ 300 V • for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-5 (VDE 0884), suitable for: - Switch-mode power supplies - Line receiver - Computer peripheral interface - Microprocessor system interface www.vishay.com 810 For technical questions, contact: [email protected] Document Number: 83503 Rev. 2.3, 14-Oct-09 TCET1100, TCET1100G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature ORDER INFORMATION PART REMARKS TCET1100 CTR 50 % to 600 %, DIP-4 TCET1101 CTR 40 % to 80 %, DIP-4 TCET1102 CTR 63 % to 125 %, DIP-4 TCET1103 CTR 100 % to 200 %, DIP-4 TCET1104 CTR 160 % to 320 %, DIP-4 TCET1105 CTR 50 % to 150 %, DIP-4 TCET1106 CTR 100 % to 300 %, DIP-4 TCET1107 CTR 80 % to 160 %, DIP-4 TCET1108 CTR 130 % to 260 %, DIP-4 TCET1109 CTR 200 % to 400 %, DIP-4 TCET1100G CTR 50 % to 600 %, DIP-4, 400 mil TCET1101G CTR 40 % to 80 %, DIP-4, 400 mil TCET1102G CTR 63 % to 125 %, DIP-4, 400 mil TCET1103G CTR 100 % to 200 %, DIP-4, 400 mil TCET1104G CTR 160 % to 320 %, DIP-4, 400 mil TCET1105G CTR 50 % to 150 %, DIP-4, 400 mil TCET1106G CTR 100 % to 300 %, DIP-4, 400 mil TCET1107G CTR 80 % to 160 %, DIP-4, 400 mil TCET1108G CTR 130 % to 260 %, DIP-4, 400 mil TCET1109G CTR 200 % to 400 %, DIP-4, 400 mil Note G = lead form 10.16 mm; G is not marked on the body ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA IFSM 1.5 A Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V IC 50 mA ICM 100 mA tp ≤ 10 µs Forward surge current OUTPUT Collector current tp/T = 0.5, tp ≤ 10 ms Collector peak current COUPLER Isolation test voltage (RMS) VISO 5000 VRMS Operating ambient temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 55 to + 125 °C Tsld 260 °C Soldering temperature (2) t = 1 min 2 mm from case, ≤ 10 s Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices (DIP). Document Number: 83503 Rev. 2.3, 14-Oct-09 For technical questions, contact: [email protected] www.vishay.com 811 TCET1100, TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature THERMAL CHARACTERISTICS PARAMETER (1) SYMBOL VALUE UNIT LED power dissipation Pdiss 100 mW Output power dissipation Pdiss 150 mW Maximum LED junction temperature Tjmax. 125 °C Maximum output die junction temperature Tjmax. 125 °C Thermal resistance, junction emitter to board θEB 173 °C/W Thermal resistance, junction emitter to case θEC 149 °C/W Thermal resistance, junction detector to board θDB 111 °C/W Thermal resistance, junction detector to case θDC 127 °C/W Thermal resistance, junction emitter to junction detector θED 173 °C/W θBA 197 °C/W θCA 4041 °C/W Thermal resistance, board to ambient (2) Thermal resistance, case to ambient (2) TA θCA Package TC θEC θDC θDE TJD TJE θDB θEB TB θBA 19996 TA Note (1) The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s “Thermal Characteristics of Optocouplers” application note. (2) For 2 layer FR4 board (4" x 3" x 0.062"). ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.6 UNIT INPUT Forward voltage IF = 50 mA VF 1.25 VR = 0, f = 1 MHz Cj 50 Collector emitter voltage IC = 1 mA VCEO 70 V Emitter collector voltage IE = 100 µA VECO 7 V VCE = 20 V, IF = 0 A, E = 0 ICEO IF = 10 mA, IC = 1 mA VCEsat Junction capacitance V pF OUTPUT Collector emitter cut-off current 10 100 nA 0.3 V COUPLER Collector emitter saturation voltage Cut-off frequency Coupling capacitance VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz f = 1 MHz Ck 0.3 pF Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. www.vishay.com 812 For technical questions, contact: [email protected] Document Number: 83503 Rev. 2.3, 14-Oct-09 TCET1100, TCET1100G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature CURRENT TRANSFER RATIO PARAMETER TEST CONDITION VCE = 5 V, IF = 1 mA IC/IF VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA PART SYMBOL MIN. TYP. TCET1101 TCET1101G MAX. UNIT CTR 13 30 % TCET1102 TCET1102G CTR 22 45 % TCET1103 TCET1103G CTR 34 70 % TCET1104 TCET1104G CTR 56 90 % TCET1100 TCET1100G CTR 50 600 % TCET1105 TCET1105G CTR 50 150 % TCET1106 TCET1106G CTR 100 300 % TCET1107 TCET1107G CTR 80 160 % TCET1108 TCET1108G CTR 130 260 % TCET1109 TCET1109G CTR 200 400 % TCET1101 TCET1101G CTR 40 80 % TCET1102 TCET1102G CTR 63 125 % TCET1103 TCET1103G CTR 100 200 % TCET1104 TCET1104G CTR 160 320 % MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF 130 mA Pdiss 265 mW VIOTM 6 kV Tsi 150 °C INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature Note According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test PARAMETER 100 %, ttest = 1 s Vpd 1.6 kV Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 6 kV Vpd 1.3 kV VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω Insulation resistance Document Number: 83503 Rev. 2.3, 14-Oct-09 TYP. For technical questions, contact: [email protected] MAX. UNIT www.vishay.com 813 TCET1100, TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, Ptot - Total Power Dissipation (mW) High Temperature VIOTM 300 t1, t2 t3 , t4 ttest tstres Phototransistor Psi (mW) 250 200 = 1 to 10 s =1s = 10 s = 12 s VPd VIOWM VIORM 150 100 IR-diode Isi (mA) 50 0 0 0 25 50 75 100 125 150 t3 ttest t4 t1 13930 tTr = 60 s t2 t stres Tsi - Safety Temperature (°C) 94 9182 t Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5/DIN EN 60747-; IEC 60747 SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) td 3 µs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tr 3 µs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ton 6 µs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ts 0.3 µs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tf 4.7 µs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) toff 5 µs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) ton 9 µs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) toff 10 µs IF +5V IF 0 MIN. IF I C = 2 mA; adjusted through input amplitude R G = 50 Ω tp = 0.01 T TYP. MAX. UNIT +5V I F = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs t p = 50 µs Channel I Channel II 50 Ω Channel I Oscilloscope R L = 1 MΩ C L = 20 pF Channel II 100 Ω 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 95 10804 Fig. 3 - Test Circuit, Non-Saturated Operation www.vishay.com 814 Fig. 4 - Test Circuit, Saturated Operation For technical questions, contact: [email protected] Document Number: 83503 Rev. 2.3, 14-Oct-09 TCET1100, TCET1100G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature IF 0 tp IC t 100 % 90 % 10 % 0 tr td tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time t tf t off ts t on Storage time Fall time Turn-off time ts tf t off (= ts + tf) 96 11698 Fig. 5 - Switching Times TYPICAL CHARACTERISTICS 300 Coupled device 250 200 Phototransistor 150 IR-diode 100 50 0 0 40 80 120 Tamb - Ambient Temperature (°C) 96 11700 CTRrel - Relative Current Transfer Ratio Ptot - Total Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified VCE = 5 V IF = 5 mA 1.5 1.0 0.5 0 - 25 25 50 75 Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature 10 000 ICEO - Collector Dark Current, with Open Base (nA) 1000 100 10 1 VCE = 20 V IF = 0 1000 100 10 1 0.1 0 96 11862 0 Tamb - Ambient Temperature (°C) 95 11025 Fig. 6 - Total Power Dissipation vs. Ambient Temperature IF - Forward Current (mA) 2.0 0.4 0.8 1.2 1.6 VF - Forward Voltage (V) Fig. 7 - Forward Current vs. Forward Voltage Document Number: 83503 Rev. 2.3, 14-Oct-09 0 2.0 95 11026 25 50 100 75 Tamb - Ambient Temperature (°C) Fig. 9 - Collector Dark Current vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 815 TCET1100, TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature CTR - Current Transfer Ratio (%) 100 IC - Collector Current (mA) VCE = 5 V 10 1 0.1 0.01 0.1 1 20 mA IF = 50 mA 10 mA 10 5 mA 2 mA 1 1 mA 0.1 95 10985 VCE - Collector Emitter Voltage (V) VCEsat - Collector Emitter Saturation Voltage (V) 20 % used 0.8 CTR = 50 % used 0.6 0.4 0.2 10 % used 0 IC - Collector Current (mA) Fig. 12 - Collector Emitter Saturation Voltage vs. Collector Current www.vishay.com 816 100 10 10 8 Non-saturated operation VS = 5 V RL = 100 Ω ton 6 toff 4 2 0 0 2 4 8 6 IC - Collector Current (mA) Fig. 14 - Turn-on/off Time vs. Collector Current 50 Saturated operation VS = 5 V RL = 1 kΩ 40 30 toff 20 10 ton 0 100 10 1 IF - Forward Current (mA) 95 11030 ton/toff - Turn-on/Turn-off Time (µs) 1.0 1 1 0.1 100 10 Fig. 11 - Collector Current vs. Collector Emitter Voltage 95 11028 10 Fig. 13 - Current Transfer Ratio vs. Forward Current ton/toff- Turn-on /Turn-off Time (µs) IC - Collector Current (mA) 100 1 100 95 11029 Fig. 10 - Collector Current vs. Forward Current 0.1 VCE = 5 V 100 10 IF - Forward Current (mA) 95 11027 1000 0 95 11031 5 10 15 20 IF - Forward Current (mA) Fig. 15 - Turn-on/off Time vs. Forward Current For technical questions, contact: [email protected] Document Number: 83503 Rev. 2.3, 14-Oct-09 TCET1100, TCET1100G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature PACKAGE DIMENSIONS in millimeters 6.5 ± 0.3 Pin 1 identifier 7.62 to 9.5 4.58 ± 0.3 7.62 typ. 0.4 ± 0.1 3.5 ± 0.1 4.5 ± 0.3 2.8 ± 0.5 0° to 15° 1.3 ± 0.1 0.25 typ. 0.5 ± 0.1 i178027-4 2.54 typ. TCET1100G type 7.62 typ. 4.5 ± 0.3 2.55 ± 0.25 20802-3 10.16 typ. PACKAGE MARKING ET1100 V YWW 24 21764-3 Document Number: 83503 Rev. 2.3, 14-Oct-09 For technical questions, contact: [email protected] www.vishay.com 817 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1