VO4154/VO4156 Vishay Semiconductors Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current FEATURES • High static dV/dt 5 kV/µs A 1 6 MT2 C 2 5 NC • High input sensitivity IFT = 1.6, 2, and 3 mA • 300 mA on-state current • Zero voltage crossing detector NC 3 ZCC* 4 MT1 *Zero Crossing Circuit • 400, and 600 V blocking voltage • Isolation test voltage 5300 VRMS APPLICATIONS i179030 • Solid-state relays DESCRIPTION • Industrial controls The VO4154/VO4156 consists of a GaAs IRLED optically coupled to a photosensitive zero crossing TRIAC packaged in a DIP-6 package. • Office equipment High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of 1.6 mA for bin D, 2 mA for bin H, and 3 mA for bin M. AGENCY APPROVALS The new phototriac zero crossing family uses a proprietary dV/dt clamp resulting in a static dV/dt of greater than 5 kV/µs. • CUL - file no. E52744, equivalent to CSA bulletin 5A • Consumer appliances • UL1577, file no. E52744 system code H or J, double protection • DIN EN 60747-5-2 (VDE 0884) available with option 1 The VO4154/VO4156 isolates low-voltage logic from 120, 240, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays. ORDER INFORMATION PART REMARKS VO4154D 400 V VDRM, lft = 1.6 mA, DIP-6 VO4154D-X006 400 V VDRM, Ift = 1.6 mA, DIP-6 400 mil VO4154D-X007 400 V VDRM, Ift = 1.6 mA, SMD-6 VO4154H 400 V VDRM, Ift = 2 mA, DIP-6 VO4154H-X006 400 V VDRM, Ift = 2 mA, DIP-6 400 mil VO4154H-X007 400 V VDRM, Ift = 2 mA, SMD-6 VO4154M 400 V VDRM, Ift = 3 mA, DIP-6 VO4154M-X006 400 V VDRM, Ift = 3 mA, DIP-6 400 mil VO4154M-X007 400 V VDRM, Ift = 3 mA, SMD-6 VO4156D 600 V VDRM, Ift = 1.6 mA, DIP-6 VO4156D-X006 600 V VDRM, Ift = 1.6 mA, DIP-6 400 mil VO4156D-X007 600 V VDRM, Ift = 1.6 mA, SMD-6 VO4156H 600 V VDRM, Ift = 2 mA, DIP-6 VO4156H-X006 600 V VDRM, Ift = 2 mA, DIP-6 400 mil VO4156H-X007 600 V VDRM, Ift = 2 mA, SMD-6 600 V VDRM, Ift = 3 mA, DIP-6 VO4156M VO4156M-X006 600 V VDRM, Ift = 3 mA, DIP-6 400 mil VO4156M-X007 600 V VDRM, Ift = 3 mA, SMD-6 Note For additional information on the available options refer to option information. Document Number: 84797 Rev. 1.4, 30-Aug-06 For technical questions, contact: [email protected] www.vishay.com 1 VO4154/VO4156 Vishay Semiconductors Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Surge current IFSM 2.5 A Power dissipation Pdiss Derate from 25 °C 100 mW 1.33 mW/°C V OUTPUT VO4154D/H/M VDRM 400 VO4156D/H/M VDRM 600 V ITM 300 mA Pdiss 500 mW 6.6 mW/°C VISO 5300 VRMS Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Tsld 260 °C Peak off-state voltage RMS on-state current Total power dissipation Derate from 25 °C COUPLER Isolation test voltage (between emitter and detector, climate per DIN 500414, part 2, Nov. 74) t = 1 min max. ≤ 10 s dip soldering ≥ 0.5 mm from case bottom Soldering temperature Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. 350 Load Current (mA) 300 250 IF = 3 mA to 10 mA 200 150 100 50 0 - 40 - 20 19623 0 20 40 60 80 100 Temperature (°C) Fig. 1 - Recommended Operating Condition www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 84797 Rev. 1.4, 30-Aug-06 VO4154/VO4156 Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current Vishay Semiconductors THERMAL CHARACTERISTICS TEST CONDITION SYMBOL VALUE UNIT LED power dissipation PARAMETER at 25 °C Pdiss 100 mW Output power dissipation at 25 °C Pdiss 500 mW Maximum LED junction temperature Tjmax 125 °C Maximum output die junction temperature Tjmax 125 °C Thermal resistance, junction emitter to board θEB 150 °C/W Thermal resistance, junction emitter to case θEC 139 °C/W Thermal resistance, junction detector to board θDB 78 °C/W Thermal resistance, junction detector to case θDC 103 °C/W Thermal resistance, junction emitter to junction detector θED 496 °C/W Thermal resistance, case to ambient θCA 3563 °C/W Note The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers Application note. TA θCA Package TC θEC θDC θDE TJD TJE θDB θEB TB θBA 19996 TA Document Number: 84797 Rev. 1.4, 30-Aug-06 For technical questions, contact: [email protected] www.vishay.com 3 VO4154/VO4156 Vishay Semiconductors Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 10 mA VF 1.2 1.4 V Reverse current VR = 6 V IR 0.1 10 µA VF = 0 V, f = 1 MHz CI 25 Input capacitance pF OUTPUT Repetitive peak off-state voltage IDRM = 100 µA VO4154D/H/M VDRM 400 VO4156D/H/M VDRM 600 V V Off-state current VD = VDRM, IF = 0 IDRM 100 µA On-state voltage IT = 300 mA VTM 3 V On-state current PF = 1, VT(RMS) = 1.7 V ITM 300 mA IF = 2 mA, VDRM IDINH 200 µA IH 500 µA IF = rated IFT VIH 20 V VD = 0.67 VDRM, TJ = 25 °C dV/dtcr 5000 V/µs dV/dtcr 8 A/µs Off-state current in inhibit state Holding current Zero cross inhibit voltage Critical rate of rise of off-state voltage Critical rate of rise of on-state COUPLER LED trigger current, current required to latch output VD = 3 V VO4154D IFT 1.6 mA VO4154H IFT 2 mA mA VO4154M IFT 3 VO4156D IFT 1.6 mA VO4156H IFT 2 mA 3 mA VO4156M Common mode coupling capacitance Capacitance (input-output) f = 1 MHz, VIO = 0 V IFT CCM 0.01 pF CIO 0.8 pF Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. Climatic classification (according to IEC 68 part 1) TYP. MAX. UNIT 55/100/21 Pollution degree (DIN VDE 0109) 2 Comparative tracking index per DIN IEC 112/VDE 0303 part 1, group IIIa per DIN VDE 6110 175 399 175 399 VIOTM VIOTM 8000 V VIORM VIORM 890 V PSO PSO 500 mW ISI ISI 250 mA TSI TSI 175 °C Creepage 7 mm Crearance 7 mm www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 84797 Rev. 1.4, 30-Aug-06 VO4154/VO4156 Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current Vishay Semiconductors TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 ITM, On-State Current (mA) 1.5 VF (V) 1.3 1.1 0 °C 0.9 25 °C 50 °C 100 0 °C 10 25 °C 85 °C 1 1.0 0.7 0.1 1.0 100.0 10.0 Fig. 2 - Diode Forward Voltage vs. Forward Current 2.0 2.5 3.0 3.5 Fig. 5 - On-State Current vs. On-State Voltage 42 38 36 34 IR = 10 µA 32 - 60 - 40 - 20 85 °C 4500 4000 25 °C 3500 0 °C 3000 2500 2000 1500 1000 500 0 0 20 40 60 0 80 100 Temperature (ºC) 19662 Output Leakage current (nA) 5000 40 VR (V) 1.5 VTM, On-State Voltage (V) 19685 IF (mA) 19660 IF = 2 mA 200 20009 Fig. 3 - Diode Reverse Voltage vs. Temperature 400 600 800 Voltage (V) Fig. 6 - Output Off Current (Leakage) vs. Voltage 1.8 10000 1.4 1000 Normalized IFT IDRM, Leakage Current (nA) 1.6 100 IRDM at 630 V 10 1.0 0.8 0.6 0.4 Normalized IFT at 25 ºC 0.2 1 0 20008 1.2 20 40 60 80 100 TA, Ambient Temperature (°C) Fig. 4 - Leakage Current vs. Ambient Temperature Document Number: 84797 Rev. 1.4, 30-Aug-06 0.0 - 60 - 40 - 20 19666 0 20 40 60 80 100 Temperature (ºC) Fig. 7 - Normalized Trigger Input Current vs. Temperature For technical questions, contact: [email protected] www.vishay.com 5 VO4154/VO4156 Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current Vishay Semiconductors 3.5 3.0 IFT (mA) 2.5 2.0 1.5 1.0 0.5 0.0 10 100 1000 Turn-On Time (µs) 20010 Fig. 8 - IFT (mA) vs. Turn-On Time (µs) 1.4 Normalized IH at 25 °C 1.2 Normalized IH 1.0 0.8 0.6 0.4 0.2 0.0 - 60 - 40 - 20 0 20 40 60 80 100 Temperature (ºC) 20011 Fig. 9 - Normalized Holding Current vs. Temperature 22 IFT, Trigger Current (mA) 20 18 16 14 85 ºC 12 100 ºC 10 8 6 4 - 40 ºC 2 25 ºC 0 10 20012 20 30 40 50 60 70 Trigger Pulse Width (µs) Fig. 10 - IFT vs. LED Pulse Width www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 84797 Rev. 1.4, 30-Aug-06 VO4154/VO4156 Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number: 84797 Rev. 1.4, 30-Aug-06 For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1