VISHAY SFH1617A-4

SFH1617A
Vishay Semiconductors
Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS, 110 °C Rated
FEATURES
• Operating temperature from - 55 °C to + 110 °C
• Good CTR linearity depending on forward
current
• Isolation test voltage, 5300 VRMS
• High collector emitter voltage, VCEO = 70 V
A
1
4
C
C
2
3
E
• Low saturation voltage
• Fast switching times
• Low CTR degradation
• Temperature stable
17907
• Low coupling capacitance
DESCRIPTION
• End stackable, 0.100" (2.54 mm) spacing
The 110 °C rated SFH1617A (DIP) feature a high current
transfer ratio, low coupling capacitance and high isolation
voltage. These couplers have a GaAs infrared diode emitter,
which is optically coupled to a silicon planar phototransistor
detector, and is incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of > 8.0 mm are achieved
with option 6. This version complies with IEC 60950
(DIN VDE 0805) for reinforced insulation up to an operation
voltage of 400 VRMS or DC. Specifications subject to change.
• High common mode interference immunity
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
APPLICATIONS
• AC adapter
• SMPS
• PLC
• Factory automation
• Game consoles
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• CSA 93751
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending
available with option 1
• BSI IEC 60950; IEC 60065
ORDER INFORMATION
PART
REMARKS
SFH1617A-1
CTR 40 to 80 %, DIP-4
SFH1617A-2
CTR 63 to 125 %, DIP-4
SFH1617A-3
CTR 100 to 200 %, DIP-4
SFH1617A-4
CTR 160 to 320 %, DIP-4
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
6.0
V
IF
60
mA
IFSM
2.5
A
0.95
mW/°C
INPUT
Reverse voltage
DC forward current
Surge forward current
t ≤ 10 µs
Derate linearly from 25 °C
Document Number: 83552
Rev. 1.6, 25-Jan-08
For technical questions, contact: [email protected]
www.vishay.com
1
SFH1617A
Vishay Semiconductors Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS, 110 °C
Rated
(1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
OUTPUT
Collector emitter voltage
VCE
70
V
Emitter collector voltage
VEC
7.0
V
IC
50
mA
IC
100
mA
1.54
mW/°C
VISO
5300
VRMS
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to + 110
°C
Tsld
260
°C
Collector current
t ≤ 1.0 ms
Derate linearly from 25 °C
COUPLER
Isolation test voltage
between emitter and detector, refer to
climate DIN 40046, part 2, Nov. 74
Isolation resistance
max. 10 s, dip soldering distance
to seating plane ≥ 1.5 mm
Soldering temperature (2)
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
Ptot - Power Dissipation (mW)
200
150
Detector
100
LED
50
0
0
18778
20
40
60
80
100
120
Tamb - Ambient Temperature (°C)
Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature
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For technical questions, contact: [email protected]
Document Number: 83552
Rev. 1.6, 25-Jan-08
SFH1617A
Optocoupler, Phototransistor Output, Vishay Semiconductors
High Reliability, 5300 VRMS, 110 °C
Rated
THERMAL CHARACTERISTICS
(1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
LED power dissipation
at 25 °C
Pdiss
100
mW
Output power dissipation
at 25 °C
Pdiss
150
mW
Maximum LED junction temperature
Tjmax
125
°C
Maximum output die junction temperature
Tjmax
125
°C
θEB
173
°C/W
Thermal resistance, junction emitter to case
θEC
149
°C/W
Thermal resistance, junction detector to board
θDB
111
°C/W
Thermal resistance, junction detector to case
θDC
127
°C/W
Thermal resistance, junction emitter to junction detector
θED
95
°C/W
Thermal resistance, board to ambient (2)
θBA
195
°C/W
Thermal resistance, case to ambient (2)
θCA
3573
°C/W
Thermal resistance, junction emitter to board
Notes
(1) The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's thermal characteristics
of optocouplers application note.
(2) For 2 layer FR4 board (4" x 3" x 0.062).
TA
θCA
Package
TC
θEC
θDC
θDE
TJD
TJE
θDB
θEB
TB
θBA
19996
TA
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.25
1.65
V
Reverse current
VR = 6.0 V
IR
0.01
10
µA
VR = 0 V, f = 1.0 MHz
CO
13
Capacitance
pF
OUTPUT
Collector emitter capacitance
Collector emitter leakage
current
VCE = 5.0 V, f = 1.0 MHz
VCE = 10 V
CCE
5.2
SFH1617A-1
ICEO
2.0
SFH1617A-2
ICEO
SFH1617A-3
ICEO
SFH1617A-4
ICEO
pF
50
nA
2.0
50
nA
5.0
100
nA
5.0
100
nA
COUPLER
Document Number: 83552
Rev. 1.6, 25-Jan-08
For technical questions, contact: [email protected]
www.vishay.com
3
SFH1617A
Vishay Semiconductors Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS, 110 °C
Rated
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
Collector emitter saturation
voltage
PART
IF = 10 mA, f = 1.0 MHz
Coupling capacitance
SYMBOL
MIN.
TYP.
VCEsat
0.4
0.25
V
0.4
pF
CC
MAX.
UNIT
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
IF = 10 mA, VCE = 5.0 V
IC/IF
IF = 1.0 mA, VCE = 5.0 V
PART
SYMBOL
MIN.
SFH1617A-1
CTR
40
TYP.
MAX.
80
UNIT
%
SFH1617A-2
CTR
63
125
%
SFH1617A-3
CTR
100
200
%
SFH1617A-4
CTR
160
320
%
SFH1617A-1
CTR
13
30
%
SFH1617A-2
CTR
22
45
%
SFH1617A-3
CTR
34
70
%
SFH1617A-4
CTR
56
90
%
PART
SYMBOL
MIN.
TYP.
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
MAX.
UNIT
NON-SATURATED
Turn-on time
IF = 10 mA, VCC = 5.0 V, RL = 75 Ω
ton
3.0
µs
Rise time
IF = 10 mA, VCC = 5.0 V, RL = 75 Ω
tr
2.0
µs
Turn-off time
IF = 10 mA, VCC = 5.0 V, RL = 75 Ω
toff
2.3
µs
Fall time
IF = 10 mA, VCC = 5.0 V, RL = 75 Ω
tf
2.0
µs
IF = 10 mA, VCC = 5.0 V
fctr
250
kHz
SFH1617A-1
ton
3.0
µs
SFH1617A-2
ton
4.2
µs
SFH1617A-3
ton
4.2
µs
IF = 5.0 mA
SFH1617A-4
ton
6.0
µs
IF = 20 mA
SFH1617A-1
tr
2.0
µs
Cut-off frequency
SATURATED
IF = 20 mA
Turn-on time
Rise time
IF = 10 mA
SFH1617A-2
tr
3.0
µs
SFH1617A-3
tr
3.0
µs
IF = 5.0 mA
SFH1617A-4
tr
4.6
µs
IF = 20 mA
SFH1617A-1
toff
18
µs
SFH1617A-2
toff
23
µs
SFH1617A-3
toff
23
µs
IF = 5.0 mA
SFH1617A-4
toff
25
µs
IF = 20 mA
SFH1617A-1
tf
11
µs
SFH1617A-2
tf
14
µs
SFH1617A-3
tf
14
µs
SFH1617A-4
tf
15
µs
IF = 10 mA
SATURATED
Turn-off time
Fall time
IF = 10 mA
IF = 10 mA
IF = 5.0 mA
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For technical questions, contact: [email protected]
Document Number: 83552
Rev. 1.6, 25-Jan-08
SFH1617A
Optocoupler, Phototransistor Output, Vishay Semiconductors
High Reliability, 5300 VRMS, 110 °C
Rated
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Climatic classification
(according to IEC 68 part 1)
TYP.
MAX.
UNIT
55/110/21
Comparative tracking index
CTI
175
399
VIOTM
10000
V
VIORM
890
V
PSO
400
mW
ISI
275
mA
TSI
175
°C
Creepage distance
standard DIP-4
7
mm
Clearance distance
standard DIP-4
7
mm
Creepage distance
400 mil DIP-4
8
mm
Clearance distance
400 mil DIP-4
8
mm
Insulation thickness,
reinforced rated
per IEC 60950 2.10.5.1
0.4
mm
Note
As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1.5
50
- 55 °C
45
0 °C
1.3
1.2
1.1
25 °C
1.0
50 °C
0.9
110 °C
0.8
0.7
0.10
17592
I C - Collector Current (mA)
V F - Forward Voltage (V)
1.4
IF = 30 mA
40
35
30
IF = 20 mA
25
I F = 15 mA
20
I F = 10 mA
15
10
I F = 5 mA
5
IF = 1 mA
0
1.00
10.00
I F - Forward Current (mA)
100.00
Fig. 2 - Forward Voltage vs. Forward Current
Document Number: 83552
Rev. 1.6, 25-Jan-08
18733
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
VCE - Collector Emitter Voltage (V)
Fig. 3 - Collector Current vs. Collector Emitter Voltage
For technical questions, contact: [email protected]
www.vishay.com
5
SFH1617A
Vishay Semiconductors Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS, 110 °C
Rated
10000
I CE0 (nA)
100
24 V
12 V
10
1
0.10
- 75
18734
- 25
25
75
125
Tamb - Ambient Temperature (°C)
CTR Norm - Normalized Output Current
40 V
1000
10 mA
0.9
0.8
5 mA
0.7
0.6
1 mA
0.5
0.4 Normalized to:
Temp = 25 °C at
0.3 IF = 10 mA and
0.2 VCE = 5V
0.1
0.0
- 55 - 35 - 15 5 25 45 65 85 105 125
Tamb - Ambient Temperature (°C)
18737
Fig. 7 - Normalized CTR vs. Temperature
25 mA
10 mA
10
5 mA
2 mA
0
0.0
18735
0.1
0.2
0.3
0.4
1 mA
0.5
0.6
VCE - Collector to Emitter Voltage (V)
CTR Norm - Normalized Output Current
Fig. 5 - Normalized Current vs. Collector Emitter Saturation Voltage
17593
1.2
IF = 5 mA
1.0
10 mA
0.8
0.6
1 mA
0.4
0.2
Normalized to
IF = 10 mA, Tamb = 25 °C,
VCE = 0.4 V, saturated
0.0
- 55 - 35 - 15 5 25 45 65 85 105 125
Tamb - Ambient Temperature (°C)
Fig. 6 - Normalized Current Transfer Ratio vs. Ambient Temperature
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6
1.2
-2 -1
1.0
0.8
-3
0.6
-4
0.4
Normalized to
I F = 10 mA, Tamb = 25 °C,
VCE = 5 V, non-saturated
0.2
0.0
0.10
1.00
10.00
100.00
IF - Forward Current (mA)
17594
Fig. 8 - Normalized CTR vs. Forward Current
CTR Norm - Normalized Output Current
I C (mA)
20
CTR Norm - Normalized Output Current
Fig. 4 - Collector to Emitter Dark Current vs. Ambient Temperature
30
1.2
1.1
1.0
17595
1.2
-1
1.0
-2
0.8
0.6
-3
0.4
-4
Normalized to
IF = 10 mA, Tamb= 25 °C,
VCE = 0.4 V, saturated
0.2
0.0
0.10
1.00
10.00
I F - Forward Current (mA)
100.00
Fig. 9 - Normalized CTR vs. Forward Current
For technical questions, contact: [email protected]
Document Number: 83552
Rev. 1.6, 25-Jan-08
SFH1617A
Optocoupler, Phototransistor Output, Vishay Semiconductors
High Reliability, 5300 VRMS, 110 °C
Rated
Fig. 10 - Forward Resistance vs. Forward Current
1000
1000
Pulse With = 100 ms
I F = 10 mA
Duty Cycle = 50 %
100
Switching Time (ms)
Switching Time (µs)
Pulse Width = 100 ms
I F = 10 mA
Duty Cycle = 50 %
toff
10
ton
100
trise
10
t fall
1
1
0.1
18340
1.0
10.0
R L - Load Resistance (kΩ)
100.0
0.1
18341
1
10
100
R L - Load Resistance (kΩ)
Fig. 11 - Forward Resistance vs. Forward Current
PACKAGE DIMENSIONS in inches (millimeters)
2
1
Pin one ID
0.255 (6.48)
0.268 (6.81)
ISO method A
3
4
0.179 (4.55)
0.190 (4.83)
0.300 (7.62) typ.
0.031 (0.79) typ.
0.030 (0.76)
0.045 (1.14)
0.050 (1.27) typ.
0.130 (3.30)
0.150 (3.81)
4°
typ.
0.018 (0.46)
i178027
0.022 (0.56)
0.230 (5.84)
0.250 (6.35)
10°
0.020 (0.508)
0.035 (0.89)
0.050 (1.27)
0.110 (2.79)
0.130 (3.30)
3° to 9°
0.008 (0.20)
0.012 (0.30)
0.100 (2.54)
Document Number: 83552
Rev. 1.6, 25-Jan-08
For technical questions, contact: [email protected]
www.vishay.com
7
SFH1617A
Vishay Semiconductors Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS, 110 °C
Rated
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
8
For technical questions, contact: [email protected]
Document Number: 83552
Rev. 1.6, 25-Jan-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1