UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT31N10M Power MOSFET 31A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT31N10M is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, etc. The UTC UTT31N10M is suitable for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. FEATURES * RDS(ON) < 24 mΩ @ VGS=10V, ID=20A RDS(ON) < 33 mΩ @ VGS=4.5V, ID=18A * High frequency switching performance SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UTT31N10ML-TA3-R UTT31N10MG-TA3-R TO-220 UTT31N10ML-TN3-R UTT31N10MG-TN3-R TO-252 UTT31N10MG-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 G G S 2 D D S Pin Assignment 3 4 5 6 S S S G D D 7 D Packing 8 Tube - Tape Reel D Tape Reel 1 of 7 QW-R209-122.b UTT31N10M Preliminary Power MOSFET MARKING TO-220 / TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw DFN-8(5×6) 2 of 7 QW-R209-122.b UTT31N10M Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current (Note 3) TA=25°C Continuous Drain Current TA=70°C Avalanche Current (Note 3) Avalanche energy L=0.1mH (Note 3) RATINGS UNIT 100 V ±20 V 31 A ID 21.5 A IDM 80 A 6.5 A IDSM 5 A IAS 18 A EAS 80.1 mJ TO-220 125 W Power Dissipation (Note 2) TC=25°C TO-252 53.5 W DFN-8(5×6) 13.6 W PD TO-220 2 W Power Dissipation (Note 1) TA=25°C TO-252 2.5 W DFN-8(5×6) 1.92 W Junction Temperature TJ -55 ~ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by junction temperature. 3. L=1mH, IAS=12.7A, VDD=30V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤15A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C SYMBOL VDSS VGSS THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction-to-Case SYMBOL TO-220 TO-252 DFN-8(5×6) TO-220 TO-252 DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 50 65 1 2.8 9.1 UNIT °C/W °C/W °C/W °C/W °C/W °C/W 3 of 7 QW-R209-122.b UTT31N10M Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted) PARAMETER STATIC PARAMETERS Drain-Source Breakdown Voltage SYMBOL BVDSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current IGSS Static Drain-Source On-State Resistance VGS(TH) ID(ON) RDS(ON) TEST CONDITIONS MIN ID=250µA, VGS=0V VDS=100V, VGS=0V VDS=100V, VGS=0V, TJ=55°C VGS=±20V, VDS=0V 100 VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A VGS=10V, ID=20A, TJ=125°C VGS=4.5V, ID=18A VDS=5V, ID=20A 1.0 80 TYP MAX UNIT 1 5 ±100 3.0 24 42 33 V µA µA nA V A mΩ mΩ mΩ S Forward Transconductance gFS 40 DYNAMIC PARAMETERS Input Capacitance CISS 427 pF =0V, V =25V, f=1.0MHz V Output Capacitance COSS 225 pF GS DS 125 pF Reverse Transfer Capacitance CRSS Gate Resistance RG VGS=0V, VDS=0V, f=1.0MHz 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Total Gate Charge QG 130 nC VDS= 50V, VGS= 10V, ID= 1.3A, Gate to Source Charge QGS 12 nC IG=100µA (Note 1, 2) 13.6 nC Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) 110 ns Rise Time tR 85 ns VDS= 30V, VGS= 10V, ID = 0.5A, RG = 25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) 1100 ns Fall-Time tF 210 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous IS 31 A Current Maximum Pulsed Drain-Source Diode ISM 80 A Forward Current Diode Forward Voltage VSD IS=1A, VGS=0V 1 V Body Diode Reverse Recovery Time trr 44 ns IF=20A, dI/dt=100A/µs Body Diode Reverse Recovery Charge Qrr 61 nC Notes: 1. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSM is based on θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 2. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ=25°C. 4. The θJA is the sum of the thermal impedance from junction to case θJC and case to ambient. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R209-122.b UTT31N10M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-122.b UTT31N10M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-122.b UTT31N10M Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-122.b