UNISONIC TECHNOLOGIES CO., LTD UTT75N08M Preliminary Power MOSFET 75A, 80V N-CHANNEL POWERTRENCH MOSFET DESCRIPTION The UTC UTT75N08M is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT75N08M is suitable for DC-DC converters, Off-Line UPS, High Voltage Synchronous Rectifier, Primary Switch for 48V and 24V Systems, etc. FEATURES * RDS(ON < 11 mΩ @ VGS=10V, ID=75A * High Switching Speed * High Current Capacity SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT75N08ML-TA3-T UTT75N08MG-TA3-T UTT75N08ML-TC3-T UTT75N08MG-TC3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-230 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-100.c UTT75N08M Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 80 V ±20 V Continuous 75 A Drain Current Pulsed (Note 2) 300 A Single Pulsed Avalanche Energy (Note 3) 125 mJ Peak Diode Recovery dv/dt (Note 4) 4.5 V/ns TO-220 125 W Power Dissipation PD TO-230 167 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=0.1mH, IAS=50A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤30A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C SYMBOL VDSS VGSS ID IDM EAS dv/dt THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220 TO-230 TO-220 TO-230 θJA θJC RATINGS 62.5 55 1 0.7 UNIT °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=80V, VGS=0V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=75A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDD=50V, Gate to Source Charge QGS ID=1.3A, IG=100µA Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, Rise Time tR VGS=10V, RG=25Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD ISD=75A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 80 1.0 1 +100 -100 V µA nA nA 3.0 11 V mΩ 4000 320 120 pF pF pF 300 14 16 56 65 780 200 nC nC nC ns ns ns ns 75 A 300 A 1.4 V 2 of 6 QW-R209-100.c UTT75N08M Preliminary Reverse Recovery Time trr VGS = 0 V, ISD = 30A, di/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET 48 62 ns nC 3 of 6 QW-R209-100.c UTT75N08M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-100.c UTT75N08M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-100.c UTT75N08M Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-100.c