UNISONIC TECHNOLOGIES CO., LTD Preliminary UNA06R063H Power MOSFET 178A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UNA06R063H is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed, a minimum on-state resistance and low gate charge. The UTC UNA06R063H is suitable for DC-DC converter, motor control and load switching. FEATURES * RDS(ON) < 6.3 mΩ @ VGS=10V, ID=20A * Low RDS(ON) SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UNA06R063HL-TA3-T UNA06R063HG-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-085.a UNA06R063H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 60 V ±20 V TC=25°C 178 A ID Continuous (Note 5) Drain Current TC=100°C 126 A 310 A Pulsed (Note 3) IDM TA=25°C 12 A Drain Current Continuous IDSM TA=70°C 10 A Avalanche Current (Note 3) IAS, IAR 125 A Avalanche Energy L=0.1mH (Note 3) EAS, EAR 781 mJ TC=25°C 417 W Power Dissipation (Note 2) PD TC=100°C 208 W TA=25°C 2.1 W Power Dissipation (Note 1) PD TA=70°C 1.3 W Junction Temperature TJ -55~+175 °C Storage Temperature Range TSTG -55~+175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS THERMAL RESISTANCES CHARACTERISTICS PARAMETER SYMBOL MIN TYP. MAX. UNIT t ≤10s 12 15 °C/W Junction to Ambient (Note 1) θJA Steady-State 48 60 °C/W Junction to Case (Note 1, 4) Steady-State θJC 0.3 0.36 °C/W Notes: 1. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSM is based on θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 2. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ=25°C. Maximum UIS current limited by test equipment. 4. The θJA is the sum of the thermal impedance from junction to case θJC and case to ambient. 5. The maximum current limited by package is 120A. UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R209-085.a UNA06R063H Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current IGSS VGS(TH) ID(ON) Static Drain-Source On-Resistance RDS(ON) TEST CONDITIONS VGS=0V, ID=250µA VDS=60V, VGS=0V VDS=60V, VGS=0V, TJ=55°C VGS=±20 V, VDS=0V 60 VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A VGS=10V, ID=20A, TJ=125°C VDS=5V, ID=20A 2.0 310 Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge at 10V QG ID=20A, VDS=30V, VGS=10V Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Turn-ON Delay Time tD(ON) VGS=10V, VDS=30V, RL=1.5Ω, Rise Time tR RGEN=3Ω Turn-OFF Delay Time tD(OFF) Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS (Note) Diode Forward Voltage VSD IS=1A, VGS=0V Body Diode Reverse Recovery Time tRR IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Charge QRR Note: The maximum current limited by package is 120A. www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd MIN TYP 2980 3735 605 872 40 69 1.6 3.2 33 280 UNIT 1 5 100 V µA µA nA 4.0 5.5 9.4 53 68 MAX 85 19 24 18 31 60 14 0.7 48 411 6.3 10.8 V A mΩ mΩ S 4500 1140 98 4.8 pF pF pF Ω 102 nC nC nC ns ns ns ns 178 A 1 63 540 V ns nC 3 of 6 QW-R209-085.a UNA06R063H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-085.a UNA06R063H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-085.a UNA06R063H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-085.a