New Product Si4626DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0036 at VGS = 10 V 30 0.0048 at VGS = 4.5 V 26.3 • TrenchFET Power MOSFET® • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT 34 nC APPLICATIONS • Low-Side DC/DC Conversion - Notebook - Gaming SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Ordering Information: Si4626DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Single Pulse Avalanche Current Avalanche Energy ID TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Unit V 21.5b, c 17.1b, c 70 5.4 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 30 ± 20 30 22.6 A 2.7b, c 40 mJ 80 6.0 3.3 PD 3.0b, c 1.9b, c - 55 to 150 TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 sec Steady State Symbol RthJA RthJF Typical 33 16 Maximum 42 21 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 sec. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 73959 S-71698-Rev. A, 13-Aug-07 www.vishay.com 1 New Product Si4626DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = 1 mA 30 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS /TJ VGS(th) Temperature Coefficient ΔVGS(th) /TJ Gate-Source Threshold Voltage V 37 ID = 250 µA mV/°C - 7.3 VGS(th) VDS = VGS , ID = 250 µA 3.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea gfs VDS ≥ 5 V, VGS = 10 V 1.0 30 µA A VGS = 10 V, ID = 15 A 0.003 0.0036 VGS = 4.5 V, ID = 10 A 0.004 0.0048 VDS = 15 V, ID = 15 A 97 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 5555 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-on Delay Time f = 1 MHz VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 51 15 0.95 1.9 44 70 21 35 70 18 30 td(on) 15 30 10 20 43 70 8 15 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω tf Fall Time 112 34 45 td(off) Turn-Off Delay Time 75 tf tr Rise Time pF nC 9.4 td(on) Turn-on Delay Time 635 300 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 5.4 ISM VSD 70 IS = 2.7 A 0.74 1.1 A V Body Diode Reverse Recovery Time trr 38 60 ns Body Diode Reverse Recovery Charge Qrr 36 60 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 5 A, di/dt = 100 A/µs, TJ = 25 °C 20 18 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73959 S-71698-Rev. A, 13-Aug-07 New Product Si4626DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 1.5 VGS = 10 thru 4 V 1.2 I D - Drain Current (A) I D - Drain Current (A) 56 42 28 0.9 TC = 25 °C 0.6 TC = 125 °C 14 0.3 3V 0 0.0 TJ = - 55 °C 0.0 0.6 1.2 1.8 2.4 3.0 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6600 0.0050 0.0045 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) Ciss 5500 VGS = 4.5 V 0.0040 0.0035 4400 3300 2200 Coss 0.0030 VGS = 10 V 1100 Crss 0 0.0025 0 14 28 42 56 0 70 6 12 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.7 10 ID = 10 A ID = 15 A 1.5 8 6 VDS = 15 V VDS = 20 V 4 VGS = 10 V (Normalized) VDS = 10 V r DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 1.3 VGS = 4.5 V 1.1 0.9 2 0 0 10 20 30 40 50 60 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73959 S-71698-Rev. A, 13-Aug-07 70 80 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si4626DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.030 100 I D = 15 A TJ = 150 °C r DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.001 0.0 0.018 0.012 TJ = 125 °C 0.006 TJ = 25 °C 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 6 7 8 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 10 200 0.3 160 0.0 - 0.3 Power (W) V GS(th) Variance (V) 0.024 ID = 5 mA 120 80 - 0.6 - 0.9 - 1.2 - 50 40 ID = 250 µA - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) Time (sec) Threshold Voltage Single Pulse Power 1 10 100 I D - Drain Current (A) *Limited by rDS(on) 1 ms 10 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73959 S-71698-Rev. A, 13-Aug-07 New Product Si4626DY Vishay Siliconix 35 7.5 28 6.0 21 4.5 Power I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 14 3.0 7 1.5 0 0.0 0 25 50 75 100 125 0 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Foot 150 2.0 Power 1.6 1.2 0.8 0.4 0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73959 S-71698-Rev. A, 13-Aug-07 www.vishay.com 5 New Product Si4626DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65 °C 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10-4 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73959. www.vishay.com 6 Document Number: 73959 S-71698-Rev. A, 13-Aug-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1