Si1450DH Vishay Siliconix New Product N-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A)a 0.047 at VGS = 4.5 V 4.0a 0.051 at VGS = 2.5 V 4.0a 0.058 at VGS = 1.8 V 4.0 a 4.0 a 0.069 at VGS = 1.5 V • TrenchFET® Power MOSFET: 1.5 V Rated • 100 % Rg Tested Qg (Typ) RoHS APPLICATIONS 4.24 nC COMPLIANT • Load Switch for Portable Applications - Guaranteed Operation at VGS = 1.5 V Critical for Optimized Design and Space Savings SOT-363 SC-70 (6-LEADS) D D 1 6 D D G 5 2 3 4 D S AH XX YY Marking Code Lot Traceability and Date Code G Part # Code S Top View Ordering Information: Si1450DH-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID Operating Junction and Storage Temperature Range IS PD TJ, Tstg Soldering Recommendations (Peak Temperature)d, e Unit V 6.04a 4.8a 4.53a 3.62a 15 2.3 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 8 ±5 A 1.3c 2.78 1.78 1.56b, c 1.0b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter t ≤ 5 sec Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. Maximum under Steady State conditions is 125 °C/W. Document Number: 74275 S-62079-Rev. A, 23-Oct-06 Symbol RthJA RthJF Typical 60 34 Maximum 80 45 Unit °C/W www.vishay.com 1 Si1450DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = 250 µA 8 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 5 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Transconductancea gfs Forward V 8.32 mV/°C - 2.7 0.3 1 V ± 100 ns VDS = 8 V, VGS = 0 V 1 VDS = 8 V, VGS = 0 V, TJ = 55 °C 10 VDS ≤ 5 V, VGS = 4.5 V 15 µA A VGS = 4.5 V, ID = 4.0 A 0.039 0.047 VGS = 2.5 V, ID = 4.0 A 0.042 0.051 VGS = 1.8 V, ID = 4.0 A 0.048 0.058 VGS = 1.5 V, ID = 1.28 A 0.053 0.069 VDS = 4 V, ID = 4.0 A 15.5 VDS = 4 V, VGS = 0 V, f = 1 MHz 120 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 535 VDS = 4 V, VGS = 5 V, ID = 4.0 A VDS = 4 V, VGS = 4.5 V, ID = 4.0 A td(off) 4.7 7.05 4.24 6.4 1.2 nC 0.810 f = 1 MHz td(on) tr pF 61 VDD = 4 V, RL = 1.11 Ω ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω tf 7.3 11 8 12 73 110 18 27 5 7.5 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 2.6 15 IS = 2.6 A, VGS = 0 V A 0.8 1.2 Body Diode Reverse Recovery Time trr 14.3 21.45 ns Body Diode Reverse Recovery Charge Qrr 3.6 5.4 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 2.6 A, di/dt = 100 A/µs, TJ = 25 °C 6.8 7.5 V ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74275 S-62079-Rev. A, 23-Oct-06 Si1450DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 3 12 I D – Drain Current (A) I D – Drain Current (A) 15 V GS = 5 thru 2 V 9 V GS = 1.5 V 6 2 TC = 125 °C 1 TC = 25 °C TC = - 55 °C 3 V GS = 1 V 0 0.0 0.5 1.0 1.5 2.0 0 0.0 2.5 0.5 VDS – Drain-to-Source Voltage (V) 1.0 1.5 2.0 VGS – Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 800 C – Capacitance (pF) rDS(on) – On-Resistance ( ) VGS = 1.5 V 0.08 VGS = 1.5 V 0.06 VGS = 2.5 V 0.04 VGS = 4.5 V Ciss 600 400 200 Coss 0.02 0.00 0 3 6 9 12 15 0 2 4 6 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) rDS(on) vs. Drain Current Capacitance 8 1.6 5 VGS = 4.5 V ID = 4.4 A VDS = 4 V ID = 4.6 A 4 1.4 rDS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) Crss 0 VGS = 6.4 V 3 2 1 1.2 VGS = 2.5 V, ID = 4.4 A VGS = 1.8 V, ID = 4.25 A VGS = 1.5 V ID = 1.2 A 1.0 0.8 0 0 2 3 5 Qg – Total Gate Charge (nC) Gate Charge Document Number: 74275 S-62079-Rev. A, 23-Oct-06 6 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ – Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1450DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 0.08 rDS(on) – Drain-to-Source On-Resistance (Ω) 10 I S − Source Current (A) TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 ID = 4.4 A 0.06 TA = 125 °C 0.04 TA = 25 °C 0.02 0.00 0.4 0.6 0.8 0.2 VSD − Source-to-Drain Voltage (V) 0 0 1 1 30 0.7 25 ID = 250 µA Power (W) VGS(th) (V) 15 0.4 10 0.3 5 0 25 50 75 5 20 0.5 - 25 4 rDS(on) vs. VGS vs. Temperature 0.8 0.2 - 50 3 VGS – Gate-to-Source Voltage (V) Forward Diode Voltage vs. Temp 0.6 2 100 125 0 0.001 150 0.01 0.1 1 10 TJ – Temperature (°C) Time (sec) Threshold Voltage Single Pulse Power 100 600 100 *Limited by rDS(on) 10 ms I D – Drain Current (A) 10 100 ms 1 1s 10 s dc 0.1 0.01 TA = 25 °C Single Pulse BVDSS Limited 0.001 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 74275 S-62079-Rev. A, 23-Oct-06 Si1450DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 3.6 8 3.2 2.8 Power Dissipation (W) ID – Drain Current (A) 6 4 Package Limited 2 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T C – Case Temperature ( C) TC – Case Temperature (°C) Power Derating Current Derating* Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74275 S-62079-Rev. A, 23-Oct-06 www.vishay.com 5 Si1450DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74275. www.vishay.com 6 Document Number: 74275 S-62079-Rev. A, 23-Oct-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1