VISHAY SI1450DH

Si1450DH
Vishay Siliconix
New Product
N-Channel 8-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
8
rDS(on) (Ω)
ID (A)a
0.047 at VGS = 4.5 V
4.0a
0.051 at VGS = 2.5 V
4.0a
0.058 at VGS = 1.8 V
4.0
a
4.0
a
0.069 at VGS = 1.5 V
• TrenchFET® Power MOSFET: 1.5 V Rated
• 100 % Rg Tested
Qg (Typ)
RoHS
APPLICATIONS
4.24 nC
COMPLIANT
• Load Switch for Portable Applications
- Guaranteed Operation at VGS = 1.5 V
Critical for Optimized Design and Space Savings
SOT-363
SC-70 (6-LEADS)
D
D
1
6
D
D
G
5
2
3
4
D
S
AH
XX
YY
Marking Code
Lot Traceability
and Date Code
G
Part # Code
S
Top View
Ordering Information: Si1450DH-T1-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Operating Junction and Storage Temperature Range
IS
PD
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Unit
V
6.04a
4.8a
4.53a
3.62a
15
2.3
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
8
±5
A
1.3c
2.78
1.78
1.56b, c
1.0b, c
- 55 to 150
260
W
°C
THERMAL RESISTANCE RATINGS
Parameter
t ≤ 5 sec
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 125 °C/W.
Document Number: 74275
S-62079-Rev. A, 23-Oct-06
Symbol
RthJA
RthJF
Typical
60
34
Maximum
80
45
Unit
°C/W
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Si1450DH
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
VDS
VGS = 0 V, ID = 250 µA
8
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Transconductancea
gfs
Forward
V
8.32
mV/°C
- 2.7
0.3
1
V
± 100
ns
VDS = 8 V, VGS = 0 V
1
VDS = 8 V, VGS = 0 V, TJ = 55 °C
10
VDS ≤ 5 V, VGS = 4.5 V
15
µA
A
VGS = 4.5 V, ID = 4.0 A
0.039
0.047
VGS = 2.5 V, ID = 4.0 A
0.042
0.051
VGS = 1.8 V, ID = 4.0 A
0.048
0.058
VGS = 1.5 V, ID = 1.28 A
0.053
0.069
VDS = 4 V, ID = 4.0 A
15.5
VDS = 4 V, VGS = 0 V, f = 1 MHz
120
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
535
VDS = 4 V, VGS = 5 V, ID = 4.0 A
VDS = 4 V, VGS = 4.5 V, ID = 4.0 A
td(off)
4.7
7.05
4.24
6.4
1.2
nC
0.810
f = 1 MHz
td(on)
tr
pF
61
VDD = 4 V, RL = 1.11 Ω
ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω
tf
7.3
11
8
12
73
110
18
27
5
7.5
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
2.6
15
IS = 2.6 A, VGS = 0 V
A
0.8
1.2
Body Diode Reverse Recovery Time
trr
14.3
21.45
ns
Body Diode Reverse Recovery Charge
Qrr
3.6
5.4
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 2.6 A, di/dt = 100 A/µs, TJ = 25 °C
6.8
7.5
V
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74275
S-62079-Rev. A, 23-Oct-06
Si1450DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless noted
3
12
I D – Drain Current (A)
I D – Drain Current (A)
15
V GS = 5 thru 2 V
9
V GS = 1.5 V
6
2
TC = 125 °C
1
TC = 25 °C
TC = - 55 °C
3
V GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
0
0.0
2.5
0.5
VDS – Drain-to-Source Voltage (V)
1.0
1.5
2.0
VGS – Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.10
800
C – Capacitance (pF)
rDS(on) – On-Resistance ( )
VGS = 1.5 V
0.08
VGS = 1.5 V
0.06
VGS = 2.5 V
0.04
VGS = 4.5 V
Ciss
600
400
200
Coss
0.02
0.00
0
3
6
9
12
15
0
2
4
6
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
rDS(on) vs. Drain Current
Capacitance
8
1.6
5
VGS = 4.5 V
ID = 4.4 A
VDS = 4 V
ID = 4.6 A
4
1.4
rDS(on) – On-Resistance
(Normalized)
V GS – Gate-to-Source Voltage (V)
Crss
0
VGS = 6.4 V
3
2
1
1.2
VGS = 2.5 V, ID = 4.4 A
VGS = 1.8 V, ID = 4.25 A
VGS = 1.5 V
ID = 1.2 A
1.0
0.8
0
0
2
3
5
Qg – Total Gate Charge (nC)
Gate Charge
Document Number: 74275
S-62079-Rev. A, 23-Oct-06
6
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si1450DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
0.08
rDS(on) – Drain-to-Source On-Resistance (Ω)
10
I S − Source Current (A)
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
ID = 4.4 A
0.06
TA = 125 °C
0.04
TA = 25 °C
0.02
0.00
0.4
0.6
0.8
0.2
VSD − Source-to-Drain Voltage (V)
0
0
1
1
30
0.7
25
ID = 250 µA
Power (W)
VGS(th) (V)
15
0.4
10
0.3
5
0
25
50
75
5
20
0.5
- 25
4
rDS(on) vs. VGS vs. Temperature
0.8
0.2
- 50
3
VGS – Gate-to-Source Voltage (V)
Forward Diode Voltage vs. Temp
0.6
2
100
125
0
0.001
150
0.01
0.1
1
10
TJ – Temperature (°C)
Time (sec)
Threshold Voltage
Single Pulse Power
100
600
100
*Limited by rDS(on)
10 ms
I D – Drain Current (A)
10
100 ms
1
1s
10 s
dc
0.1
0.01
TA = 25 °C
Single Pulse
BVDSS Limited
0.001
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
*VGS
minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Case
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Document Number: 74275
S-62079-Rev. A, 23-Oct-06
Si1450DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
3.6
8
3.2
2.8
Power Dissipation (W)
ID – Drain Current (A)
6
4
Package Limited
2
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T C – Case Temperature ( C)
TC – Case Temperature (°C)
Power Derating
Current Derating*
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 100 °C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
*The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 74275
S-62079-Rev. A, 23-Oct-06
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Si1450DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?74275.
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Document Number: 74275
S-62079-Rev. A, 23-Oct-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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