VISHAY SI2303CDS-T1-E3

Si2303CDS
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
MOSFET PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.190 at VGS = - 10 V
- 2.7
0.330 at VGS = - 4.5 V
- 2.1
VDS (V)
- 30
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
Qg (Typ.)
2 nC
RoHS
COMPLIANT
APPLICATIONS
• Load Switch
TO-236
(SOT-23)
G
1
3
S
D
2
Top View
Si2303CDS (N3)*
* Marking Code
Ordering Information: Si2303CDS-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Continuous Source-Drain Diode Current
Limit
- 30
± 20
- 2.7
- 2.2
V
- 1.9b, c
- 1.5b, c
- 10
- 1.75
A
- 0.83b, c
-5
1.25
2.3
1.5
mJ
1.0b, c
0.7b, c
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
W
°C
THERMAL RESISTANCE RATINGS
Parameter
≤5s
Maximum Junction-to-Ambientb, d
Steady State
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 160 °C/W.
Document Number: 69991
S-80798-Rev. A, 14-Apr-08
Symbol
RthJA
RthJF
Typical
80
35
Maximum
120
55
Unit
°C/W
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Si2303CDS
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VDS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
V
- 27
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
-3
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS ≤ - 5 V, VGS = - 10 V
3.8
-1
- 10
µA
A
VGS = - 10 V, ID = - 1.9 A
0.158
0.190
VGS = - 4.5 V, ID = - 1.4 A
0.275
0.330
VDS = - 5 V, ID = - 1.9 A
2
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
155
VDS = - 15 V, VGS = 0 V, f = 1 MHz
VDS = - 15 V, VGS = - 10 V, ID = - 1.9 A
VDS = - 15 V, VGS = - 4.5 V, ID = - 1.9 A
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
8
4
0.6
f = 1 MHz
VDD = - 15 V, RL = 10 Ω
ID = - 1.5 A, VGEN = - 10 V, RG = 1 Ω
1.7
8.5
17
4
8
11
18
11
18
8
16
td(on)
36
44
37
45
12
18
9
14
td(off)
VDD = - 15 V, RL = 10 Ω
ID ≅ - 1.5 A, VGEN = - 4.5 V, RG = 1 Ω
tf
Fall Time
4
2
tf
tr
Rise Time
Turn-Off Delay Time
pF
nC
1
td(on)
Turn-On Delay Time
35
25
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
- 1.75
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
- 10
IS = - 1.5 A
IF = - 1.5 A, di/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
17
26
ns
9
14
nC
12
5
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69991
S-80798-Rev. A, 14-Apr-08
Si2303CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
1.0
VGS = 10 thru 5 V
0.8
I D - Drain Current (A)
I D - Drain Current (A)
8
6
VGS = 4 V
4
2
0.6
0.4
TC = 125 °C
0.2
TC = 25 °C
VGS = 3 V
0
TC = - 55 °C
0.0
0
1
2
3
4
5
0
1
VDS - Drain-to-Source Voltage (V)
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.5
300
0.4
240
VGS = 4.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
2
0.3
VGS = 10 V
0.2
Ciss
180
120
Coss
60
0.1
Crss
0
0
0
2
4
6
8
10
0
6
ID - Drain Current (A)
12
18
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.6
10
1.4
VDS = 15 V
6
VDS = 24 V
4
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
ID = 1.9 A
VGS = 10 V, ID = 1.9 A
1.2
VGS = 4.5 V, ID = 1.4 A
1.0
0.8
2
0
0
1
2
3
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 69991
S-80798-Rev. A, 14-Apr-08
4
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si2303CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.5
10
TJ = 150 °C
TJ = 25 °C
1
0.1
0.0
0.4
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 1.9 A
0.3
TJ = 125 °C
0.2
0.1
TJ = 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
4
8
12
16
20
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
6
2.2
5
2.0
4
Power (W)
V GS(th) (V)
ID = 250 µA
1.8
3
2
1.6
1
1.4
- 50
- 25
0
25
50
75
100
125
0
0.01
150
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Single Pulse Power
Threshold Voltage
10
I D - Drain Current (A)
Limited by RDS(on)*
100 µs
1
1 ms
10 ms
0.1
100 ms
1 s, 10 s
DC
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area
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Document Number: 69991
S-80798-Rev. A, 14-Apr-08
Si2303CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
I D - Drain Current (A)
2.4
1.8
1.2
0.6
0.0
0
25
50
75
100
125
150
0
25
TC - Case Temperature (°C)
3.0
1.0
2.4
0.8
1.8
0.6
Power (W)
Power (W)
Current Derating*
1.2
0.6
0.4
0.2
0.0
0.0
0
25
50
75
100
125
150
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69991
S-80798-Rev. A, 14-Apr-08
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Si2303CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 104 °C/W
0.02
3. TJM - T A = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69991.
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Document Number: 69991
S-80798-Rev. A, 14-Apr-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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